1920AB35 35 Watts, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB35 is a COMMON EMITTER transistor capable of providing 35 Watts of Class AB, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS BASE STATION amplifier applications. It includes Input prematching and utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide high reliability and supreme ruggedness. . 55AR, STYLE 2 COMMON EMITTER ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 120 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage LVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 60 Volts 27 Volts 3.5 Volts 14.0 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance ηc VSWR1 BVces LVceo BVebo Ices hFE Cob θjc Collector to Emitter Breakdown Collector to Emitter Breakdown Emitter to Base Breakdown Collector Leakage Current DC - Current Gain Output Capacitance Thermal Resistance TEST CONDITIONS F =1990 MHz Vce = 25 Volts Icq = 250 mAmps As Above MIN MAX 35 6.0 8.0 8.5 43 UNITS Watt Watt dB % 3:1 Ic = 50 mA Ic = 50 mA Ie = 10 mA Vce = 27 Volts 60 27 3.5 Vce = 5 V, Ic = 0.7 A F =1 MHz, Vcb = 28 V 20 Tc = 25oC TYP 10 100 36 1.6 Volts Volts Volts mA pF C/W o Issue January 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 Typical Performance 1920AB35 August 1996