1S2075(K) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144C (Z) Rev.3 Dec. 2000 Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1S2075(K) Green H DO-35 H Outline 2 1 Cathode band 1. Cathode 2. Anode 1S2075(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 35 V Reverse voltage VR 30 V Peak forward current IFM 450 mA Non-Repetitive peak forward surge current IFSM * 600 mA Average forward current IO 100 mA Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg −65 to +175 °C Note: Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF 0.8 V IF = 10 mA Reverse current IR 0.1 µA VR = 30 V Capacitance C 3.5 pF VR = 1 V, f = 1 MHz Reverse recovery time trr * 8.0 ns IF = IR = 10 mA, Irr = 1 mA Note: Reverse recovery time test circuit DC Supply 0.1µF 3kΩ Sampling Rin = 50Ω Oscilloscope Ro = 50Ω Pulse Generator Trigger Rev.3, Dec. 2000, page 2 of 5 1S2075(K) Main Characteristic 10−1 10−4 Ta = 125°C Reverse current IR (A) 125 °C Ta = 7 5 °C Ta = 25°C Ta = -25°C 10−2 Ta = Forward current IF (A) 10−5 10 −3 10−6 10−7 Ta = 25°C 10 10−4 0 0.4 0.6 1.0 0.2 0.8 Forward voltage VF (V) 1.2 Fig.1 Forward current Vs. Forward voltage Ta = 75°C −8 10−9 0 10 20 30 40 Reverse voltage VR (V) 50 Fig.2 Reverse current Vs. Reverse voltage f = 1MHz Capacitance C (pF) 10 1.0 0.1 1.0 10 Reverse voltage VR (V) 100 Fig.3 Capacitance Vs. Reverse voltage Rev.3, Dec. 2000, page 3 of 5 1S2075(K) Package Dimensions Unit: mm 4.2 Max 26.0 Min φ 0.5 φ 2.0 26.0 Min Hitachi Code JEDEC EIAJ Mass (reference value) Rev.3, Dec. 2000, page 4 of 5 DO-35 Conforms Conforms 0.13 g 1S2075(K) Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.3, Dec. 2000, page 5 of 5