1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. Cathode band Mark Package Code 1SS120 Light Blue 1 MHD 1 Outline 2 1 Cathode band 1. Cathode 2. Anode 1SS120 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 70 V Reverse voltage VR 60 V Peak forward current I FM 450 mA Non-Repetitive peak forward surge current I FSM * 1 A Average forward current IO 150 mA Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.8 V I F = 10mA Reverse current IR — — 0.1 µA VR = 60V Capacitance C — — 3.0 pF VR = 1V, f = 1MHz Reverse recovery time t rr* — — 3.5 ns I F = 10mA, VR = 6V, RL = 50Ω Note: Reverse recovery time test circuit DC Supply 0.1µF 3kΩ Sampling Rin = 50Ω Oscilloscope Ro = 50Ω Pulse Generator Trigger 2 1SS120 –1 –2 10 10 Ta = 125 °C Ta = 75°C Ta = 25°C Ta = –25° C Forward current I F (A) 10 –3 –4 10 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) 1.2 Fig.1 Forward current Vs. Forward voltage –4 10 Ta = 125°C –5 Reverse current I R (A) 10 Ta = 75°C –6 10 10 –7 Ta = 25°C –8 10 –9 10 0 60 20 40 80 Reverse voltage VR (V) 100 Fig.2 Reverse current Vs. Reverse voltage 3 1SS120 f = 1MHz Capacitance C (pF) 10 1.0 –1 10 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 4 102 1SS120 Package Dimensions Unit: mm 2.4 Max 26.0 Min 1 φ 0.4 1 φ 2.0 Max 26.0 Min 1 Cathode 2 2 Anode Cathode band (Light Blue) HITACHI Code MHD JEDEC Code DO-34 EIAJ Code — Weight (g) 0.084 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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