HSU119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-444(Z) Rev 0 Feb. 1997 Features • Low capacitance. (C = 2.0pF max) • Short reverse recovery time. (trr = 3.0ns max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSU119 H1 URP Outline Cathode mark Mark 1 H1 2 1. Cathode 2. Anode HSU119 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 V Average forward current IO 100 mA Peak rectified current I FM 300 mA 4 A *1 Non-Repetitive peak forward surge current I FSM Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Within 1µ s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 — — 0.8 V I F = 10 mA VF2 — — 1.2 Reverse current IR — — 0.1 µA VR = 80V Capacitance C — — 2.0 pF VR = 0V, f = 1 MHz Reverse recovery time*1 t rr — — 3.0 ns I F = 10 mA, VR = 6V RL= 50Ω Note: I F = 100 mA 1. Reverse recovery time test circuit DC Supply 0.1µF 3k Ω Ro =50 Ω Pulse Generator Sampling Rin =50 Ω Oscilloscope Trigger 2 HSU119 Main Characteristic 1.0 10 Reverse current I R (A) -1 10 10 -2 Ta= 75° C Ta= 25°C Ta=25°C Forward current IF (A) 10 -4 -5 10 Ta=75°C -6 Ta=50°C 10 10 10 -7 Ta=25°C -8 -9 -10 10 -11 -3 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 Reverse voltage V R (V) Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 -1 10 -1 10 1.0 10 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HSU119 Package Dimensions Unit : mm 1.7±0.15 2.5±0.15 2 0.3±0.15 H1 1 1.25±0.15 Cathode Mark 4 0.9±0.15 0 ‘0.10 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) URP — — 0.004 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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