HITACHI HSU119

HSU119
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-444(Z)
Rev 0
Feb. 1997
Features
• Low capacitance. (C = 2.0pF max)
• Short reverse recovery time. (trr = 3.0ns max)
• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSU119
H1
URP
Outline
Cathode mark
Mark
1
H1
2
1. Cathode
2. Anode
HSU119
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Average forward current
IO
100
mA
Peak rectified current
I FM
300
mA
4
A
*1
Non-Repetitive peak
forward surge current
I FSM
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Note:
1. Within 1µ s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF1
—
—
0.8
V
I F = 10 mA
VF2
—
—
1.2
Reverse current
IR
—
—
0.1
µA
VR = 80V
Capacitance
C
—
—
2.0
pF
VR = 0V, f = 1 MHz
Reverse recovery
time*1
t rr
—
—
3.0
ns
I F = 10 mA, VR = 6V RL= 50Ω
Note:
I F = 100 mA
1. Reverse recovery time test circuit
DC
Supply
0.1µF
3k Ω
Ro =50 Ω Pulse
Generator
Sampling
Rin =50 Ω
Oscilloscope
Trigger
2
HSU119
Main Characteristic
1.0
10
Reverse current I R (A)
-1
10
10
-2
Ta=
75°
C
Ta=
25°C
Ta=25°C
Forward current IF
(A)
10
-4
-5
10
Ta=75°C
-6
Ta=50°C
10
10
10
-7
Ta=25°C
-8
-9
-10
10
-11
-3
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
Reverse voltage V R (V)
Forward voltage V F (V)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
f=1MHz
Capacitance C
(pF)
10
1.0
-1
10
-1
10
1.0
10
Reverse voltage V R (V)
Fig.3 Capacitance Vs. Reverse voltage
3
HSU119
Package Dimensions
Unit : mm
1.7±0.15
2.5±0.15
2
0.3±0.15
H1
1
1.25±0.15
Cathode Mark
4
0.9±0.15
0 ‘0.10
1. Cathode
2. Anode
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
URP
—
—
0.004
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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