2SB1520 Preliminary Silicon PNP Epitaxial High Voltage Amplifier Features UPAK • Low saturation voltage VCE (sat) ≤ –0.3 V • Large current capacitance IC = –2 A Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Collector to base voltage VCBO –80 V ——————————————————————– Collector to emitter voltage VCEO –80 V ——————————————————————– Emitter to base voltage VEBO –5 V ——————————————————————– Collector current IC –2 A ——————————————————————– Peak collector current iC(peak)* –3 A ——————————————————————– Collector power dissipation PC** 1 W ——————————————————————– Junction temperature Tj 150 °C ——————————————————————– Storage temperature Tstg –55 to +150 °C ——————————————————————– * PW ≤ 10 ms, duty cycle ≤ 20% ** When using the alumina ceramic board (12.5 × 20 × 0.7 mm) 3 2 1 1. Base 2. Collector 3. Emitter Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ———————————————————————————————————————————————– Collector to base breakdown voltage V(BR)CBO –80 — — V IC = –10 µA, IE = 0 ———————————————————————————————————————————————– Collector to emitter breakdown voltage V(BR)CEO –80 — — V IC = –1 mA, RBE = ∞ ———————————————————————————————————————————————– Emitter to base breakdown voltage V(BR)EBO –5 — — V IC = –10 µA, IE = 0 ———————————————————————————————————————————————– Collector cutoff current ICBO — — –1 µA VCB = –65 V, IE = 0 ———————————————————————————————————————————————– Collector cutoff current ICEO — — –5 µA VCE = –65 V, RBE = ∞ ———————————————————————————————————————————————– Emitter cutoff current IEBO — — –1 µA VEB = –4 V, IC = 0 ———————————————————————————————————————————————– DC current transfer ratio hFE1 120 — 300 — VCE = –2 V, IC = –0.5 A* ———————————————————————————————————————————————– DC current transfer ratio hFE2 40 — — — VCE = –2 V, IC = –1.5 A* ———————————————————————————————————————————————–