ETC 2SB1520

2SB1520
Preliminary
Silicon PNP Epitaxial
High Voltage Amplifier
Features
UPAK
• Low saturation voltage
VCE (sat) ≤ –0.3 V
• Large current capacitance
IC = –2 A
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol Rating
Unit
——————————————————————–
Collector to base voltage
VCBO
–80
V
——————————————————————–
Collector to emitter voltage VCEO
–80
V
——————————————————————–
Emitter to base voltage
VEBO
–5
V
——————————————————————–
Collector current
IC
–2
A
——————————————————————–
Peak collector current
iC(peak)* –3
A
——————————————————————–
Collector power dissipation PC**
1
W
——————————————————————–
Junction temperature
Tj
150
°C
——————————————————————–
Storage temperature
Tstg
–55 to +150 °C
——————————————————————–
* PW ≤ 10 ms, duty cycle ≤ 20%
** When using the alumina ceramic board (12.5 × 20 × 0.7
mm)
3
2
1
1. Base
2. Collector
3. Emitter
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test condition
———————————————————————————————————————————————–
Collector to base breakdown voltage
V(BR)CBO –80 —
—
V
IC = –10 µA, IE = 0
———————————————————————————————————————————————–
Collector to emitter breakdown voltage V(BR)CEO –80 —
—
V
IC = –1 mA, RBE = ∞
———————————————————————————————————————————————–
Emitter to base breakdown voltage
V(BR)EBO –5
—
—
V
IC = –10 µA, IE = 0
———————————————————————————————————————————————–
Collector cutoff current
ICBO
—
—
–1
µA
VCB = –65 V, IE = 0
———————————————————————————————————————————————–
Collector cutoff current
ICEO
—
—
–5
µA
VCE = –65 V, RBE = ∞
———————————————————————————————————————————————–
Emitter cutoff current
IEBO
—
—
–1
µA
VEB = –4 V, IC = 0
———————————————————————————————————————————————–
DC current transfer ratio
hFE1
120 —
300 —
VCE = –2 V, IC = –0.5 A*
———————————————————————————————————————————————–
DC current transfer ratio
hFE2
40
—
—
—
VCE = –2 V, IC = –1.5 A*
———————————————————————————————————————————————–