2SC4680 Preliminary Silicon NPN Epitaxial VHF/UHF High Frequency Switching Features MPAK • Low Ron and high performance for RF switch. • Capable of high density mounting. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Collector to base voltage VCBO 12 V ——————————————————————– Collector to emitter voltage VCEO 8 V ——————————————————————– Emitter to base voltage VEBO 3 V ——————————————————————– Collector current IC 50 mA ——————————————————————– Collector power dissipation PC 150 mW ——————————————————————– Junction temperature Tj 150 °C ——————————————————————– Storage temperature Tstg –55 to +150 °C ——————————————————————– 3 1 2 1. Emitter 2. Base 3. Collector Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ———————————————————————————————————————————————– Collector to base breakdown voltage V(BR)CBO 12 — — V IC = 10 µA, IE = 0 ———————————————————————————————————————————————– Collector cutoff current ICBO — — 10 µA VCB = 12 V, IE = 0 ———————————————————————————————————————————————– Collector cutoff current ICEO — — 1 mA VCE = 8 V, RBE = ∞ ———————————————————————————————————————————————– Emitter cutoff current IEBO — — 10 µA VEB = 3 V, IC = 0 ———————————————————————————————————————————————– Collector to emitter saturation voltage VCE(sat) — 70 100 mV IC = 20 mA, IB = 4 mA ———————————————————————————————————————————————– DC current transfer ratio hFE 100 250 — — VCE = 5 V, IC = 5 mA ———————————————————————————————————————————————– Collector output capacitance Cob — 1.0 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz ———————————————————————————————————————————————– • Marking is “XU-”.