ETC ABA

Agilent ABA-52563
3.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Features
• Operating frequency: DC ~ 3.5 GHz
• 21.5 dB gain
• VSWR < 2.0 throughout operating
frequency
• 9.8 dBm output P1dB
Description
Agilent’s ABA-52563 is an
economical, easy-to-use, internally 50-ohm matched silicon
monolithic amplifier that offers
excellent gain and flat broadband
response from 0.1 GHz to
3.5 GHz. Packaged in an ultraminiature industry-standard
SOT-363 package, it requires half
the board space of a SOT-143
package.
• Unconditionally stable
• Single 5V supply (Id = 35 mA)
Applications
• Amplifier for cellular, cordless,
special mobile radio, PCS, ISM,
wireless LAN, DBS, TVRO, and TV
tuner applications
Pin Connections and
Package Marking
GND 1
GND 2
2H
At 2 GHz, the ABA-52563 offers a
small-signal gain of 21.5 dB,
output P1dB of 9.8 dBm and
19.9 dBm output third order
intercept point. It is suitable for
use as buffer amplifiers for
wideband applications. They are
designed for low cost gain blocks
in cellular applications, DBS
tuners, LNB and other wireless
communications systems.
• 3.3 dB noise figure
Surface Mount Package
SOT-363/SC70
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification.
Simplified Schematic
ABA-52563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a doublediffused single polysilicon
process with self-aligned submicron emitter geometry. The
process is capable of simultaneous high fT and high NPN
breakdown (25 GHz fT at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
Vcc
RF
Output
& Vcc
RF
Input
Ground 2
Ground 3
Ground 1
ABA-52563 Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute Maximum
Vcc
Device Voltage, RF output to ground
V
+8
Pin
CW RF Input Power (Vcc = 5V)
dBm
+20
θjc
Thermal Resistance [2]
°C/W
106
Pdiss
Total Power Dissipation [3]
W
0.5
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 5.2 mW/°C for Tb > 96.7°C.
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Gp[1]
Power Gain (|S21|)
dB
20
21.5
∆Gp
Power Gain Flatness,
NF[1]
Std Dev.
0.2
dB
0.5
2.0
Noise Figure
dB
3.3
P1dB[1]
Output Power at 1dB Gain Compression
dBm
9.8
0.15
OIP3[1]
Output Third Order Intercept Point
dBm
19.9
0.18
VSWRin[1]
VSWRout
[1]
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
Max.
Input VSWR
1.2
Output VSWR
1.4
Icc[1]
Device Current
mA
35
td[1]
Group Delay
ps
150
4
0.12
0.5
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Cblock
RF Output
2H
RFC
RF Input
Vcc
Cblock
Cbypass
Figure 1. ABA-52563 Production Test Circuit.
2
ABA-52563 Typical Performance
23
22
22
21
21
20
4.5
4
NF (dB)
23
GAIN (dB)
GAIN (dB)
Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise.
20
3
19
19
4.5V
5V
5.5V
18
-40°C
+25°C
+85°C
18
0
0.5
1
1.5
2
2.5
3
3.5
2
0
4
4.5V
5V
5.5V
2.5
17
17
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
Figure 4. Noise Figure vs. Frequency and
Voltage.
14
6
16
12
5
12
4
3
10
P1dB (dBm)
P1dB (dBm)
NF (dB)
3.5
8
8
6
-40°C
+25°C
+85°C
2
0
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
4
-40°C
+25°C
+85°C
4
0
2
1
3
4.5V
5V
5.5V
4
0
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
ABA-52563 Typical Performance, continued
Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise.
40
35
35
30
25
OIP3 (dBm)
OIP3 (dBm)
30
25
20
15
5
15
10
4.5V
5V
5.5V
10
20
-40°C
+25°C
+85°C
5
0
0
0
1
0.5
1.5
2
2.5
3
3.5
0
4
0.5
1
Figure 8. Output IP3 vs. Frequency and
Voltage.
2
2.5
3
3.5
4
Figure 9. Output IP3 vs. Frequency and
Temperature.
2.0
70
60
VSWR IN
VWSR OUT
1.8
-40°C
+25°C
+85°C
50
Icc (mA)
1.6
VSWR
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
1.4
40
30
1.2
20
1.0
10
0.8
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 10. Input and Output VSWR vs.
Frequency.
4
6
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Figure 11. Supply Current vs. Voltage and
Temperature.
8
ABA-52563 Typical Scattering Parameters
TC = +25°C, VCC = 5V, ZO = 50 Ω, unless stated otherwise
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
dB
S21
Mag.
S21
Ang.
S12
dB
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
K
Factor
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
3.20
3.40
3.50
4.00
4.50
5.00
5.50
6.00
0.01
0.00
0.00
0.01
0.02
0.03
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.07
0.07
0.08
0.09
0.09
0.10
0.10
0.11
0.11
0.12
0.16
0.19
0.25
0.30
146.6
134.0
-40.6
-53.2
-56.7
-141.5
-128.1
-127.5
-126.7
-123.9
-125.0
-123.4
-127.4
-133.8
-136.7
-142.5
-143.9
-146.1
-148.4
-149.5
-152.7
-158.7
-163.2
-167.6
165.9
138.3
122.8
112.3
99.3
21.7
21.7
21.7
21.7
21.7
21.8
21.8
21.7
21.7
21.7
21.7
21.7
21.6
21.6
21.6
21.5
21.5
21.4
21.3
21.1
20.8
20.4
20.0
19.7
18.3
16.9
15.1
13.7
12.3
12.10
12.11
12.16
12.19
12.19
12.26
12.24
12.21
12.18
12.16
12.13
12.10
12.05
12.04
12.00
11.94
11.87
11.75
11.56
11.33
10.95
10.51
9.97
9.67
8.25
6.98
5.71
4.85
4.14
-2.6
-4.8
-9.6
-14.5
-19.5
-24.8
-29.8
-34.9
-39.8
-44.7
-49.7
-59.6
-69.4
-79.6
-89.8
-100.4
-111.2
-121.9
-133.2
-144.5
-156.1
-167.5
-178.7
175.9
150.6
126.3
105.0
86.7
70.4
-30.2
-30.5
-30.5
-30.8
-30.8
-30.5
-30.8
-30.5
-30.5
-30.8
-30.8
-30.2
-30.2
-29.6
-29.1
-29.4
-28.6
-28.4
-28.0
-27.7
-27.3
-27.1
-27.3
-26.6
-.26.2
-25.5
-24.7
-23.5
-23.1
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.06
0.07
0.07
0.3
-0.3
0.1
1.2
2.4
1.0
3.1
4.3
6.1
7.4
11.7
10.8
12.4
13.0
14.7
14.3
16.7
16.2
17.3
15.6
15.8
15.6
15.5
16.0
12.0
12.7
9.5
6.0
1.0
0.15
0.15
0.15
0.15
0.14
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.14
0.14
0.13
0.13
0.13
0.13
0.13
0.14
0.12
0.12
0.11
-2.4
-5.1
-9.6
-13.0
-15.7
-15.7
-17.6
-20.3
-22.5
-24.2
-26.4
-29.4
-32.4
-35.3
-37.8
-38.3
-37.8
-37.3
-36.9
-36.4
-35.9
-35.4
-34.9
-34.6
-33.4
-37.1
-48.4
-63.0
-83.5
1.492
1.528
1.523
1.560
1.560
1.516
1.557
1.520
1.523
1.563
1.566
1.490
1.491
1.424
1.370
1.402
1.326
1.309
1.279
1.273
1.263
1.275
1.338
1.285
1.386
1.462
1.585
1.565
1.680
5
Device Models
Refer to Agilent’s web site
www.agilent.com/view/rf
Ordering Information
Part Number
Devices per Container
Container
ABA-52563-TR1
3000
7" reel
ABA-52563-TR2
10000
13" reel
ABA-52563-BLK
100
antistatic bag
Package Dimensions
Outline 63 (SOT-363/SC-70)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6
0.20 (0.008)
0.10 (0.004)
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
8 mm
CARRIER
TAPE
USER
FEED
DIRECTION
2H
2H
2H
2H
(Package marking example orientation shown.)
COVER TAPE
Tape Dimensions and Product Orientation for Outline 63
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
8° MAX.
A0
DESCRIPTION
7
5° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.00004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(408) 654-8675
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6271 2451
India, Australia, New Zealand: (+65) 6271 2394
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (+65) 6271 2194
Malaysia, Singapore: (+65) 6271 2054
Taiwan: (+65) 6271 2654
Data subject to change.
Copyright © 2003 Agilent Technologies, Inc.
February 20, 2003
5988-8955EN