DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS70 series Schottky barrier (double) diodes Product specification Supersedes data of 1996 Oct 01 1999 Jun 01 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series PINNING FEATURES • Low forward current DESCRIPTION • High breakdown voltage SOT23 PIN • Guard ring protected SOT143B BAS70 (see Fig.1b) BAS70-04 (see Fig.1c) BAS70-05 (see Fig.1d) BAS70-06 (see Fig.1e) BAS70-07 (see Fig.2) 1 a1 a1 a1 k1 k1 2 n.c. k2 a2 k2 k2 APPLICATIONS 3 k1 k1, a2 k1, k2 a1, a2 a2 • Ultra high-speed switching 4 − − − − a1 • Small plastic SMD package • Low diode capacitance. • Voltage clamping • Protection circuits. handbook, 2 columns DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. 3 1 1 a. Simplified outline SOT23. 73p∗ BAS70-04 74p∗ BAS70-05 75p∗ BAS70-06 76p∗ BAS70-07 77p 1 2 MGC484 d. BAS70-05. 3 3 handbook, 2 columns 2 n.c. 1 BAS70 3 handbook, 2 columns MGC482 MARKING TYPE NUMBER c. BAS70-04 2 handbook, 2 columns MARKING CODE(1) 2 MGC485 Top view The diodes BAS70, BAS70-04, BAS70-05 and BAS70-06 are encapsulated in a SOT23 small plastic SMD package. The BAS70-07 is encapsulated in a SOT143B small plastic SMD package. 3 handbook, 2 columns 1 2 MGC483 MGC486 b. BAS70 single diode. e. BAS70-06. Fig.1 Simplified outline (SOT23) and symbols. Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia. handbook, halfpage 4 3 1 Top view 4 3 1 2 2 MAM194 Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol. 1999 Jun 01 2 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 70 V IF continuous forward current − 70 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 70 mA IFSM non-repetitive peak forward current tp < 10 ms − 100 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 1 mA 410 mV IF = 10 mA 750 mV IF = 15 mA 1 V VR = 50 V; note 1; see Fig.4 100 nA VR = 70 V; note 1; see Fig.4 10 µA τ charge carrier life time (Krakauer method) IF = 5 mA 100 ps Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOT23 or SOT143B standard mounting conditions. 1999 Jun 01 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series GRAPHICAL DATA MRA803 10 2 MRA805 10 2 IR IF (mA) (1) (µA) 10 10 (2) 1 1 10 1 (3) 10 1 10 2 (1) 10 2 0 (2) (3) (4) 0.2 0.4 0.6 0.8 10 3 1 0 20 40 60 (1) (2) (3) (4) Tamb = 125 °C. Tamb = 85 °C. Tamb = 25 °C. Tamb = −40 °C. Fig.3 80 VR (V) VF (V) (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Forward current as a function of forward voltage; typical values. Fig.4 MGL762 103 Reverse current as a function of reverse voltage; typical values. MRA804 2 Cd (pF) rdif (Ω) 1.5 102 1 10 0.5 1 10−1 0 1 10 IF (mA) 0 102 60 80 f = 1 MHz. Differential forward resistance as a function of forward current; typical values. 1999 Jun 01 40 VR (V) f = 10 kHz. Fig.5 20 Fig.6 4 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series PACKAGE OUTLINES Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Jun 01 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1999 Jun 01 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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