fax id: 5404 /25/29/ CY7C419/21/25/29/33 256/512 /1K /2K/4K x 9 Asynchronous FIFO Features • • • • • • • • • • • • • • • Asynchronous first-in first-out (FIFO) buffer memories 256 x 9 (CY7C419) 512 x 9 (CY7C421) 1K x 9 (CY7C425) 2K x 9 (CY7C429) 4K x 9 (CY7C433) Dual-ported RAM cell High-speed 50.0-MHz read/write independent of depth/width Low operating power: ICC = 35 mA Empty and Full flags (Half Full flag in standalone) TTL compatible Retransmit in standalone Expandable in width PLCC, 7x7 TQFP, SOJ, 300-mil and 600-mil DIP Pin compatible and functionally equivalent to IDT7200, IDT7201, IDT7202, IDT7203, IDT7204, AM7200, AM7201, AM7202, AM7203, and AM7204 Each FIFO memory is organized such that the data is read in the same sequential order that it was written. Full and Empty flags are provided to prevent overrun and underrun. Three additional pins are also provided to facilitate unlimited expansion in width, depth, or both. The depth expansion technique steers the control signals from one device to another in parallel, thus eliminating the serial addition of propagation delays, so that throughput is not reduced. Data is steered in a similar manner. The read and write operations may be asynchronous; each can occur at a rate of 50.0 MHz. The write operation occurs when the write (W) signal is LOW. Read occurs when read (R) goes LOW. The nine data outputs go to the high-impedance state when R is HIGH. A Half Full (HF) output flag is provided that is valid in the standalone and width expansion configurations. In the depth expansion configuration, this pin provides the expansion out (XO) information that is used to tell the next FIFO that it will be activated. Functional Description In the standalone and width expansion configurations, a LOW on the retransmit (RT) input causes the FIFOs to retransmit the data. Read enable (R) and write enable (W) must both be HIGH during retransmit, and then R is used to access the data. The CY7C419, CY7C420/1, CY7C424/5, CY7C428/9, and CY7C432/3 are first-in first-out (FIFO) memories offered in 600-mil wide and 300-mil wide packages. They are, respectively, 256, 512, 1,024, 2,048, and 4,096 words by 9-bits wide. The CY7C419, CY7C420, CY7C421, CY7C424, CY7C425, CY7C428, CY7C429, CY7C432, and CY7C433 are fabricated using an advanced 0.65-micron P-well CMOS technology. Input ESD protection is greater than 2000V and latch-up is prevented by careful layout and guard rings. Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 February 1988 – Revised November 4, 1997 CY7C419/21/25/29/33 Logic Block Diagram Pin Configurations DATA INPUTS (D0–D 8) DIP Top View D3 D8 W NC Vcc D4 D5 PLCC/LCC Top View RAM ARRAY 256x 9 512x 9 1024x 9 2048x 9 4096x 9 WRITE POINTER READ POINTER Q3 Q8 GND NC R Q4 Q5 THREESTATE BUFFERS READ CONTROL XI XO/HF Q7 Q6 C420–2 1 28 2 27 3 26 4 25 5 24 7C419 6 7C420/1 23 7 7C424/5 22 8 7C428/9 21 7C432/3 9 20 10 19 11 18 12 17 13 16 14 15 C420–3 32 3130 29 28 27 26 25 D1 D0 XO/HF Vcc D4 D5 D6 D7 FL/RT MR EF XO/HF Q7 Q6 Q5 Q4 R FL/RT EF FF EXPANSION LOGIC D2 MR RESET LOGIC FLAG LOGIC D6 D7 NC FL/RT MR EF TQFP Top View DATA OUTPUTS (Q0–Q 8) R W D8 D3 D2 D1 D0 XI FF Q0 Q1 Q2 Q3 Q8 GND D5 D6 WRITE CONTROL D3 D8 W VCC D4 W 4 3 2 1 323130 D2 5 29 D1 6 28 D0 7 27 XI 8 26 7C419 FF 9 7C421/5/9 25 7C433 Q0 10 24 Q1 11 23 NC 12 22 Q2 13 21 14 15 1617 181920 C420–1 1 2 3 4 5 6 7 8 NC NC XI FF Q0 Q1 D7 FL/RT 24 23 22 21 20 19 18 17 7C419 7C421/5/9 7C433 NC NC MR EF XO/HF Q7 9 10 11 12 13 14 15 16 Q6 Q5 Q2 Q3 Q8 GND R Q4 C420–4 Selection Guide 7C419–10 7C419–15 7C421–10 7C421–15 7C425–10 7C425–15 7C429–10 7C429–15 7C429–20 7C433–10 7C433–15 7C433–20 7C433–25 7C433–30 7C433–40 7C433–65 Frequency (MHz) 50 40 33.3 28.5 25 20 12.5 Maximum Access Time (ns) 10 15 20 25 30 40 65 ICC1 (mA) 35 35 35 35 35 35 35 256 x 9 512 x 9 (600-mil only) 512 x 9 1K x 9 (600-mil only) 1K x 9 7C420–20 7C420–25 7C420–40 7C420–65 7C421–20 7C421–25 7C421–30 7C421–40 7C421–65 7C424–20 7C424–25 7C424–30 7C424–40 7C424–65 7C425–20 7C425–25 7C425–30 7C425–40 7C425–65 7C429–25 7C429–30 7C429–40 7C428–65 7C432–25 4K x 9 (600-mil only) 4K x 9 7C419–40 7C428–20 2K x 9 (600-mil only) 2K x 9 7C419–30 7C429–65 7C432–40 DC Voltage Applied to Outputs in High Z State................................................–0.5V to +7.0V Maximum Rating DC Input Voltage ............................................–0.5V to +7.0V (Above which the useful life may be impaired. For user guidelines, not tested.) Power Dissipation .......................................................... 1.0W Storage Temperature .................................–65°C to +150°C Output Current, into Outputs (LOW)............................ 20 mA Ambient Temperature with Power Applied .............................................–55°C to +125°C Static Discharge Voltage ........................................... >2000V (per MIL–STD–883, Method 3015) Supply Voltage to Ground Potential ............... –0.5V to +7.0V Latch-Up Current..................................................... >200 mA 2 CY7C419/21/25/29/33 Operating Range Range Ambient Temperature[1] VCC 0°C to + 70°C 5V ± 10% Industrial –40°C to +85°C 5V ± 10% Military –55°C to +125°C 5V ± 10% Commercial Electrical Characteristics Over the Operating Range[2] 7C419–10, 15, 30, 40 7C420/1–10, 15, 20, 25, 30, 40, 65 7C424/5–10, 15, 20, 25, 30, 40, 65 7C428/9–10, 15, 20, 25, 30, 40, 65 7C432/3–10, 15, 20, 25, 30, 40, 65 Parameter Description VOH Output HIGH Voltage VOL Output LOW Voltage VIH Input HIGH Voltage Test Conditions VIL Input LOW Voltage IIX Input Leakage Current IOZ Output Leakage Current IOS Min. VCC = Min., IOH = –2.0 mA VCC = Min., IOL = 8.0 mA Output Short Circuit Current Unit V 0.4 V Com’l 2.0 VCC V Mil/Ind 2.2 VCC Note 3 0.8 V –10 +10 µA –10 +10 µA –90 mA GND < VI < VCC R > VIH, GND < VO < VCC [4] Max. 2..4 VCC = Max., VOUT = GND Electrical Characteristics Over the Operating Range[2] (continued) Parameter ICC Description Operating Current Test Conditions VCC = Max., IOUT = 0 mA f = fMAX Com’l 7C419–10 7C419–15 7C421–10 7C421–15 7C425–10 7C425–15 7C429–10 7C429–15 7C420–20 7C421–20 7C424–20 7C425–20 7C428–20 7C429–20 7C433–10 7C433–15 7C433–20 7C420–25 7C421–25 7C424–25 7C425–25 7C429–25 7C432–25 7C433–25 Min. Max. Min. Max. Min. Max. Min. Max. 85 Mil/Ind 65 55 50 100 90 80 Unit mA ICC1 Operating Current VCC = Max., IOUT = 0 mA F = 20 MHz Com’l 35 35 35 35 mA ISB1 Standby Current All Inputs = VIH Min. Com’l 10 10 10 10 mA 15 15 15 ISB2 Power-Down Current All Inputs > VCC –0.2V Com’l 5 5 5 8 8 8 Mil/Ind 5 Mil/Ind Notes: 1. TA is the “instant on” case temperature. 2. See the last page of this specification for Group A subgroup testing information. 3. VIL (Min.) = –2.0V for pulse durations of less than 20 ns. 4. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. 3 mA CY7C419/21/25/29/33 Electrical Characteristics Over the Operating Range[2] (continued) 7C419–30 7C421–30 7C424–30 7C425–30 7C429–30 7C433–30 Parameter ICC Description Test Conditions Operating Current Min. Max. 7C419–40 7C420–40 7C421–40 7C424–40 7C425–40 7C420–65 7C421–65 7C424–65 7C425–65 7C428–65 7C429–65 7C429–40 7C432–40 7C433–40 Min. 7C433–65 Max. Min. Max. Units mA VCC = Max., IOUT = 0 mA f = fMAX Com’l 40 35 35 Mil/Ind 75 70 65 ICC1 Operating Current VCC = Max., IOUT = 0 mA F = 20 MHz Com’l 35 35 35 mA ISB1 Standby Current All Inputs = VIH Min. Com’l 10 10 10 mA Mil 15 15 15 All Inputs > VCC –0.2V Com’l 5 5 5 Mil 8 8 8 ISB2 Power-Down Current mA Capacitance[5] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 4.5V Max. Unit 6 pF 6 pF Note: 5. Tested initially and after any design or process changes that may affect these parameters. AC Test Loads and Waveforms R1 500 Ω 5V R1 500 Ω 5V OUTPUT ALL INPUT PULSES 3.0V OUTPUT R2 333 Ω 30 pF INCLUDING JIGAND SCOPE C420–6 (a) R2 333 Ω 5 pF INCLUDING JIGAND SCOPE C420–7 (b) Equivalent to: THÉVENIN EQUIVALENT 200Ω OUTPUT 2V 4 GND ≤ 3 ns 90% 10% 90% 10% ≤ 3 ns C420–8 CY7C419/21/25/29/33 Switching Characteristics Over the Operating Range[6, 7] Parameter Description 7C419–10 7C419–15 7C421–10 7C421–15 7C425–10 7C425–15 7C429–10 7C429–15 7C420–20 7C421–20 7C424–20 7C425–20 7C428–20 7C429–20 7C433–10 7C433–15 7C433–20 Min. Max. Min. Max. Min. Max. Max. Access Time tRR Read Recovery Time 10 10 10 10 ns tPR Read Pulse Width 10 15 20 25 ns tLZR[5,8] Read LOW to Low Z 3 3 3 3 ns Data Valid After Read HIGH 5 15 5 35 Unit tA 10 30 Min. Read Cycle Time tDVR 25 7C429–25 7C432–25 7C433–25 tRC [8,9] 20 7C420–25 7C421–25 7C424–25 7C425–25 20 5 ns 25 5 ns ns tHZR[5,8,9] Read HIGH to High Z tWC Write Cycle Time 20 25 30 35 ns tPW Write Pulse Width 10 15 20 25 ns tHWZ[5,8] Write HIGH to Low Z 5 5 5 5 ns tWR Write Recovery Time 10 10 10 10 ns tSD Data Set-Up Time 6 8 12 15 ns tHD Data Hold Time 0 0 0 0 ns tMRSC MR Cycle Time 20 25 30 35 ns tPMR MR Pulse Width 10 15 20 25 ns tRMR MR Recovery Time 10 10 10 10 ns tRPW Read HIGH to MR HIGH 10 15 20 25 ns tWPW Write HIGH to MR HIGH 10 15 20 25 ns tRTC Retransmit Cycle Time 20 25 30 35 ns tPRT Retransmit Pulse Width 10 15 20 25 ns tRTR Retransmit Recovery Time 10 10 10 10 ns 15 15 15 18 ns Notes: 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V and output loading of the specified IOL/IOH and 30 pF load capacitance, as in part (a) of AC Test Load and Waveforms, unless otherwise specified. 7. See the last page of this specification for Group A subgroup testing information. 8. tHZR transition is measured at +200 mV from VOL and –200 mV from VOH. tDVR transition is measured at the 1.5V level. tHWZ and tLZR transition is measured at ±100 mV from the steady state. 9. tHZR and tDVR use capacitance loading as in part (b) of AC Test Load and Waveforms. 5 CY7C419/21/25/29/33 Switching Characteristics Over the Operating Range[6, 7] (continued) Parameter Description 7C419–10 7C419–15 7C421–10 7C421–15 7C425–10 7C425–15 7C429–10 7C429–15 7C420–20 7C421–20 7C424–20 7C425–20 7C428–20 7C429–20 7C433–10 7C433–15 7C433–20 Min. Max. Min. Max. Unit MR to EF LOW 20 25 30 35 ns tHFH MR to HF HIGH 20 25 30 35 ns tFFH MR to FF HIGH 20 25 30 35 ns tREF Read LOW to EF LOW 10 15 20 25 ns tRFF Read HIGH to FF HIGH 10 15 20 25 ns tWEF Write HIGH to EF HIGH 10 15 20 25 ns tWFF Write LOW to FF LOW 10 15 20 25 ns tWHF Write LOW to HF LOW 10 15 20 25 ns tRHF Read HIGH to HF HIGH 10 15 20 25 ns tRAE Effective Read from Write HIGH 25 ns tRPE Effective Read Pulse Width After EF HIGH tWAF Effective Write from Read HIGH tWPF Effective Write Pulse Width After FF HIGH tXOL Expansion Out LOW Delay from Clock 10 15 20 25 ns tXOH Expansion Out HIGH Delay from Clock 10 15 20 25 ns 10 15 15 10 10 6 Min. Max. 7C429–25 7C432–25 7C433–25 tEFL 10 Max. 7C420–25 7C421–25 7C424–25 7C425–25 20 20 15 15 Min. 25 20 20 ns 25 25 ns ns CY7C419/21/25/29/33 Switching Characteristics Over the Operating Range[6, 7] (continued) 7C419–30 7C421–30 7C424–30 7C425–30 7C429–30 7C433–30 Parameter Description Min. Max. 7C429–40 7C432–40 7C433–40 Min. Max. 7C433–65 Min. Max. tA Access Time tRR Read Recovery Time 10 10 15 ns tPR Read Pulse Width 30 40 65 ns tLZR[5,8] Read LOW to Low Z 3 3 3 ns Data Valid After Read HIGH 5 30 80 Unit Read Cycle Time tDVR 50 7C420–65 7C421–65 7C424–65 7C425–65 7C428–65 7C429–65 tRC [8,9] 40 7C419–40 7C420–40 7C421–40 7C424–40 7C425–40 40 5 ns 65 5 ns ns tHZR[5,8,9] Read HIGH to High Z tWC Write Cycle Time 40 50 80 ns tPW Write Pulse Width 30 40 65 ns tHWZ[5,8] Write HIGH to Low Z 5 5 5 ns tWR Write Recovery Time 10 10 15 ns tSD Data Set-Up Time 18 20 30 ns tHD Data Hold Time 0 0 0 ns tMRSC MR Cycle Time 40 50 80 ns tPMR MR Pulse Width 30 40 65 ns tRMR MR Recovery Time 10 10 15 ns tRPW Read HIGH to MR HIGH 30 40 65 ns tWPW Write HIGH to MR HIGH 30 40 65 ns tRTC Retransmit Cycle Time 40 50 80 ns tPRT Retransmit Pulse Width 30 40 65 ns tRTR Retransmit Recovery Time 10 10 15 ns tEFL MR to EF LOW 40 50 80 ns tHFH MR to HF HIGH 40 50 80 ns tFFH MR to FF HIGH 40 50 80 ns tREF Read LOW to EF LOW 30 35 60 ns tRFF Read HIGH to FF HIGH 30 35 60 ns tWEF Write HIGH to EF HIGH 30 35 60 ns tWFF Write LOW to FF LOW 30 35 60 ns tWHF Write LOW to HF LOW 30 35 60 ns tRHF Read HIGH to HF HIGH 30 35 60 ns tRAE Effective Read from Write HIGH 30 35 60 ns tRPE Effective Read Pulse Width After EF HIGH tWAF Effective Write from Read HIGH tWPF Effective Write Pulse Width After FF HIGH tXOL Expansion Out LOW Delay from Clock 30 40 65 ns tXOH Expansion Out HIGH Delay from Clock 30 40 65 ns 20 30 20 40 30 30 7 20 65 35 40 ns ns 60 65 ns ns CY7C419/21/25/29/33 Switching Waveforms Asynchronous Read and Write tRC tA tPR tA tRR R tLZR tDVR tHZR DATA VALID Q0–Q 8 tPW tWC DATA VALID tWR W tSD tHD DATA VALID D0–D 8 DATA VALID C420–9 Master Reset tMRSC tPMR MR R, W [11] [10] tRPW tWPW tEFL tRMR EF tHFH HF tFFH FF C420–10 Half-Full Flag HALF FULL HALF FULL+1 HALF FULL W tRHF R tWHF HF C420–11 Notes: 10. W and R ≥ VIH around the rising edge of MR. 11. tMRSC = tPMR + tRMR. 8 CY7C419/21/25/29/33 Switching Waveforms (continued) Last Write to First Read Full Flag LAST WRITE ADDITIONAL READS FIRST READ FIRST WRITE R W tRFF tWFF FF C420–12 Last Read to First Write Empty Flag LAST READ ADDITIONAL WRITES FIRST WRITE FIRST READ W R tWEF tREF EF tA DATA OUT VALID VALID C420–13 Retransmit [12] tRTC[13] tPRT FL/RT R,W tRTR C420–14 Notes: 12. EF, HF and FF may change state during retransmit as a result of the offset of the read and write pointers, but flags will be valid at tRTC. 13. tRTC = tPRT + tRTR. 9 CY7C419/21/25/29/33 Switching Waveforms (continued) Empty Flag and Read Data Flow-Through Mode DATA IN W tRAE R tREF EF tWEF tRPE tA tHWZ DATA OUT DATA VALID C420–15 Full Flag and Write Data Flow-Through Mode R tWAF tWPF W tRFF tWFF FF tHD DATA IN DATA VALID tA DATA OUT tSD DATA VALID C420–16 10 CY7C419/21/25/29/33 Switching Waveforms (continued) Expansion Timing Diagrams WRITE TO LAST PHYSICAL LOCATION OF DEVICE 1 WRITE TO FIRST PHYSICAL LOCATION OF DEVICE 2 W tWR tXOH tXOL [14] XO1(XI2) tHD tSD DATA VALID D0–D 8 tHD tSD DATA VALID C420–17 READ FROM LAST PHYSICAL LOCATION OF DEVICE 1 READ FROM FIRST PHYSICAL LOCATION OF DEVICE 2 R tRR [14] tXOL tXOH XO1(XI2) tHZR tLZR tDVR tDVR DATA VALID Q0–Q 8 DATA VALID tA tA C420–18 Note: 14. Expansion Out of device 1 (XO1) is connected to Expansion In of device 2 (XI2). would be required for data propagation through the memory, which would be the case if the memory were implemented using the conventional register array architecture. Architecture The CY7C419, CY7C420/1, CY7C424/5, CY7C428/9, CY7C432/3 FIFOs consist of an array of 256, 512, 1024, 2048, 4096 words of 9 bits each (implemented by an array of dual-port RAM cells), a read pointer, a write pointer, control signals (W, R, XI, XO, FL, RT, MR), and Full, Half Full, and Empty flags. Resetting the FIFO Upon power-up, the FIFO must be reset with a Master Reset (MR) cycle. This causes the FIFO to enter the empty condition signified by the Empty flag (EF) being LOW, and both the Half Full (HF) and Full flags (FF) being HIGH. Read (R) and write (W) must be HIGH tRPW/tWPW before and tRMR after the rising edge of MR for a valid reset cycle. If reading from the FIFO after a reset cycle is attempted, the outputs will all be in the high-impedance state. Dual-Port RAM The dual-port RAM architecture refers to the basic memory cell used in the RAM. The cell itself enables the read and write operations to be independent of each other, which is necessary to achieve truly asynchronous operation of the inputs and outputs. A second benefit is that the time required to increment the read and write pointers is much less than the time that 11 CY7C419/21/25/29/33 Writing Data to the FIFO be expanded in width to provide word widths greater than nine in increments of nine. During width expansion mode, all control line inputs are common to all devices, and flag outputs from any device can be monitored. The availability of at least one empty location is indicated by a HIGH FF. The falling edge of W initiates a write cycle. Data appearing at the inputs (D0–D8) tSD before and tHD after the rising edge of W will be stored sequentially in the FIFO. Depth Expansion Mode (see Figure 1) The EF LOW-to-HIGH transition occurs tWEF after the first LOW-to-HIGH transition of W for an empty FIFO. HF goes LOW tWHF after the falling edge of W following the FIFO actually being Half Full. Therefore, the HF is active once the FIFO is filled to half its capacity plus one word. HF will remain LOW while less than one half of total memory is available for writing. The LOW-to-HIGH transition of HF occurs tRHF after the rising edge of R when the FIFO goes from half full +1 to half full. HF is available in standalone and width expansion modes. FF goes LOW tWFF after the falling edge of W, during the cycle in which the last available location is filled. Internal logic prevents overrunning a full FIFO. Writes to a full FIFO are ignored and the write pointer is not incremented. FF goes HIGH tRFF after a read from a full FIFO. Depth expansion mode is entered when, during a MR cycle, Expansion Out (XO) of one device is connected to Expansion In (XI) of the next device, with XO of the last device connected to XI of the first device. In the depth expansion mode the First Load (FL) input, when grounded, indicates that this part is the first to be loaded. All other devices must have this pin HIGH. To enable the correct FIFO, XO is pulsed LOW when the last physical location of the previous FIFO is written to and pulsed LOW again when the last physical location is read. Only one FIFO is enabled for read and one for write at any given time. All other devices are in standby. FIFOs can also be expanded simultaneously in depth and width. Consequently, any depth or width FIFO can be created of word widths in increments of 9. When expanding in depth, a composite FF must be created by ORing the FFs together. Likewise, a composite EF is created by ORing the EFs together. HF and RT functions are not available in depth expansion mode. Reading Data from the FIFO The falling edge of R initiates a read cycle if the EF is not LOW. Data outputs (Q0–Q 8) are in a high-impedance condition between read operations (R HIGH), when the FIFO is empty, or when the FIFO is not the active device in the depth expansion mode. Use of the Empty and Full Flags In order to achieve the maximum frequency, the flags must be valid at the beginning of the next cycle. However, because they can be updated by either edge of the read of write signal, they must be valid by one-half of a cycle. Cypress FIFOs meet this requirement; some competitors’ FIFOs do not. When one word is in the FIFO, the falling edge of R initiates a HIGH-to-LOW transition of EF. The rising edge of R causes the data outputs to go to the high-impedance state and remain such until a write is performed. Reads to an empty FIFO are ignored and do not increment the read pointer. From the empty condition, the FIFO can be read tWEF after a valid write. The reason why the flags are required to be valid by the next cycle is fairly complex. It has to do with the “effective pulse width violation” phenomenon, which can occur at the full and empty boundary conditions, if the flags are not properly used. The empty flag must be used to prevent reading from an empty FIFO and the full flag must be used to prevent writing into a full FIFO. The retransmit feature is beneficial when transferring packets of data. It enables the receipt of data to be acknowledged by the receiver and retransmitted if necessary. The Retransmit (RT) input is active in the standalone and width expansion modes. The retransmit feature is intended for use when a number of writes equal to or less than the depth of the FIFO have occurred since the last MR cycle. A LOW pulse on RT resets the internal read pointer to the first physical location of the FIFO. R and W must both be HIGH while and tRTR after retransmit is LOW. With every read cycle after retransmit, previously accessed data as well as not previously accessed data is read and the read pointer is incremented until it is equal to the write pointer. Full, Half Full, and Empty flags are governed by the relative locations of the read and write pointers and are updated during a retransmit cycle. Data written to the FIFO after activation of RT are transmitted also. For example, consider an empty FIFO that is receiving read pulses. Because the FIFO is empty, the read pulses are ignored by the FIFO, and nothing happens. Next, a single word is written into the FIFO, with a signal that is asynchronous to the read signal. The (internal) state machine in the FIFO goes from empty to empty+1. However, it does this asynchronously with respect to the read signal, so that it cannot be determined what the effective pulse width of the read signal is, because the state machine does not look at the read signal until it goes to the empty+1 state. In a similar manner, the minimum write pulse width may be violated by attempting to write into a full FIFO, and asynchronously performing a read. The empty and full flags are used to avoid these effective pulse width violations, but in order to do this and operate at the maximum frequency, the flag must be valid at the beginning of the next cycle. Up to the full depth of the FIFO can be repeatedly retransmitted. Standalone/Width Expansion Modes Standalone and width expansion modes are set by grounding Expansion In (XI) and tying First Load (FL) to VCC. FIFOs can 12 CY7C419/21/25/29/33 XO R W FF 9 EF CY7C419 CY7C420/1 CY7C424/5 CY7C428/9 CY7C432/3 9 D 9 Q FL VCC XI XO FULL FF EF CY7C419 CY7C420/1 CY7C424/5 CY7C428/9 CY7C432/3 9 EMPTY FL XI XO * FF 9 MR CY7C419 CY7C420/1 CY7C424/5 CY7C428/9 CY7C432/3 EF FL XI * FIRST DEVICE C420–19 Figure 1. Depth Expansion 13 CY7C419/21/25/29/33 Ordering Information Speed (ns) 10 15 Ordering Code Package Type Package Type CY7C419–10AC A32 32-Pin Thin Plastic Quad Flatpack CY7C419–10JC J65 32-Lead Plastic Leaded Chip Carrier CY7C419–10PC P21 28-Lead (300-Mil) Molded DIP CY7C419–10VC V21 28-Lead (300-Mil) Molded SOJ CY7C419–15AC A32 32-Pin Thin Plastic Quad Flatpack CY7C419–15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C419–15VC V21 28-Lead (300-Mil) Molded SOJ Operating Range Commercial Commercial CY7C419–15JI J65 32-Lead Plastic Leaded Chip Carrier Industrial 30 CY7C419–30JC J65 32-Lead Plastic Leaded Chip Carrier Commercial 40 CY7C419–40AC A32 32-Pin Thin Plastic Quad Flatpack Commercial CY7C419–40JC J65 32-Lead Plastic Leaded Chip Carrier Ordering Information (continued) Speed (ns) Ordering Code Package Type Package Type Operating Range 25 CY7C420–25PC P15 28-Lead (600-Mil) Molded DIP Commercial 40 CY7C420–40PC P15 28-Lead (600-Mil) Molded DIP Commercial 65 CY7C420–65PC P15 28-Lead (600-Mil) Molded DIP Commercial Ordering Information (continued) Speed (ns) 10 15 20 25 30 Ordering Code CY7C421–10AC Package Type Package Type Operating Range A32 32-Pin Thin Plastic Quad Flatpack CY7C421–10JC J65 32-Lead Plastic Leaded Chip Carrier CY7C421–10PC P21 28-Lead (300-Mil) Molded DIP CY7C421–10VC V21 28-Lead (300-Mil) Molded SOJ CY7C421–15AC A32 32-Pin Thin Plastic Quad Flatpack CY7C421–15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C421–15JI J65 32-Lead Plastic Leaded Chip Carrier CY7C421–15VI V21 28-Lead (300-Mil) Molded SOJ CY7C421–15DMB D22 28-Lead (300-Mil) CerDIP CY7C421–15LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C421–20JC J65 32-Lead Plastic Leaded Chip Carrier CY7C421–20PC P21 28-Lead (300-Mil) Molded DIP CY7C421–20VC V21 28-Lead (300-Mil) Molded SOJ CY7C421–20JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C421–25JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C421–25PC P21 28-Lead (300-Mil) Molded DIP CY7C421–25VC V21 28-Lead (300-Mil) Molded SOJ CY7C421–25JI J65 32-Lead Plastic Leaded Chip Carrier CY7C421–25PI P21 28-Lead (300-Mil) Molded DIP CY7C421–25DMB D22 28-Lead (300-Mil) CerDIP Military CY7C421–30JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C421–30PC P21 28-Lead (300-Mil) Molded DIP 14 Commercial Commercial Industrial Military Commercial Industrial CY7C419/21/25/29/33 Ordering Information (continued) Speed (ns) 30 40 65 Ordering Code Package Type Package Type Operating Range CY7C421–30JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C421–30DMB D22 28-Lead (300-Mil) CerDIP Military CY7C421–30LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C421–40JC J65 32-Lead Plastic Leaded Chip Carrier CY7C421–40PC P21 28-Lead (300-Mil) Molded DIP CY7C421–40VC V21 28-Lead (300-Mil) Molded SOJ CY7C421–40JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C421–65JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C421–65PC P21 28-Lead (300-Mil) Molded DIP CY7C421–65VC V21 28-Lead (300-Mil) Molded SOJ CY7C421–65JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C421–65DMB D22 28-Lead (300-Mil) CerDIP Military Commercial Ordering Information (continued) Speed (ns) Ordering Code Package Type Package Type Operating Range 40 CY7C424–40PC P15 28-Lead (600-Mil) Molded DIP Commercial 65 CY7C424–65PC P15 28-Lead (600-Mil) Molded DIP Commercial Ordering Information (continued) Speed (ns) 10 15 20 25 30 Ordering Code Package Type Package Type CY7C425–10AC A32 32-Pin Thin Plastic Quad Flatpack CY7C425–10JC J65 32-Lead Plastic Leaded Chip Carrier CY7C425–10PC P21 28-Lead (300-Mil) Molded DIP CY7C425–10VC V21 28-Lead (300-Mil) Molded SOJ CY7C425–15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C425–15PC P21 28-Lead (300-Mil) Molded DIP CY7C425–15DMB D22 28-Lead (300-Mil) CerDIP CY7C425–15LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C425–20JC J65 32-Lead Plastic Leaded Chip Carrier CY7C425–20PC P21 28-Lead (300-Mil) Molded DIP CY7C425–20VC V21 28-Lead (300-Mil) Molded SOJ CY7C425–25JC J65 32-Lead Plastic Leaded Chip Carrier CY7C425–25PC P21 28-Lead (300-Mil) Molded DIP CY7C425–25JI J65 32-Lead Plastic Leaded Chip Carrier CY7C425–25VI V21 28-Lead (300-Mil) Molded SOJ CY7C425–25DMB D22 28-Lead (300-Mil) CerDIP CY7C425–25LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C425–30JC J65 32-Lead Plastic Leaded Chip Carrier CY7C425–30PC P21 28-Lead (300-Mil) Molded DIP CY7C425–30VC V21 28-Lead (300-Mil) Molded SOJ CY7C425–30VI V21 28-Lead (300-Mil) Molded SOJ 15 Operating Range Commercial Commercial Military Commercial Commercial Industrial Military Commercial Industrial CY7C419/21/25/29/33 Ordering Information (continued) Speed (ns) 40 65 Ordering Code Package Type Package Type Operating Range CY7C425–40JC J65 32-Lead Plastic Leaded Chip Carrier CY7C425–40PC P21 28-Lead (300-Mil) Molded DIP Commercial CY7C425–40VC V21 28-Lead (300-Mil) Molded SOJ CY7C425–40JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C425–65JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C425–65PC P21 28-Lead (300-Mil) Molded DIP Ordering Information (continued) Speed (ns) Ordering Code Package Type Package Type Operating Range 20 CY7C428–20PC P15 28-Lead (600-Mil) Molded DIP Commercial 25 CY7C428–25DMB D16 28-Lead (600-Mil) CerDIP Military 65 CY7C428–65PC P15 28-Lead (600-Mil) Molded DIP Commercial Ordering Information (continued) Speed (ns) 10 15 20 25 30 40 65 Ordering Code Package Type Package Type Operating Range CY7C429–10AC A32 32-Pin Thin Plastic Quad Flatpack CY7C429–10JC J65 32-Lead Plastic Leaded Chip Carrier CY7C429–10PC P21 28-Lead (300-Mil) Molded DIP CY7C429–15JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C429–15JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C429–15DMB D22 28-Lead (300-Mil) CerDIP Military CY7C429–15LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C429–20JC J65 32-Lead Plastic Leaded Chip Carrier CY7C429–20PC P21 28-Lead (300-Mil) Molded DIP CY7C429–20VC V21 28-Lead (300-Mil) Molded SOJ CY7C429–20DMB D22 28-Lead (300-Mil) CerDIP Military CY7C429–25JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C429–25PC P21 28-Lead (300-Mil) Molded DIP CY7C429–25VC V21 28-Lead (300-Mil) Molded SOJ CY7C429–25JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C429–25DMB D22 28-Lead (300-Mil) CerDIP Military CY7C429–25LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C429–30JC J65 32-Lead Plastic Leaded Chip Carrier CY7C429–30PC P21 28-Lead (300-Mil) Molded DIP CY7C429–30VC V21 28-Lead (300-Mil) Molded SOJ CY7C429–30DMB D22 28-Lead (300-Mil) CerDIP Military CY7C429–40AC A32 32-Pin Thin Plastic Quad Flatpack Commercial CY7C429–40JC J65 32-Lead Plastic Leaded Chip Carrier CY7C429–40PC P21 28-Lead (300-Mil) Molded DIP CY7C429–65JC J65 32-Lead Plastic Leaded Chip Carrier CY7C429–65PC P21 28-Lead (300-Mil) Molded DIP CY7C429–65JI J65 32-Lead Plastic Leaded Chip Carrier 16 Commercial Commercial Commercial Commercial Industrial CY7C419/21/25/29/33 Ordering Information (continued) Speed (ns) Ordering Code Package Name Package Type Operating Range 25 CY7C432–25PC P15 28-Lead (600-Mil) Molded DIP Commercial 40 CY7C432–40PC P15 28-Lead (600-Mil) Molded DIP Commercial Ordering Information (continued) Speed (ns) 10 15 20 25 30 40 65 Ordering Code Package Name Package Type Operating Range CY7C433–10AC A32 32-Pin Thin Plastic Quad Flatpack CY7C433–10JC J65 32-Lead Plastic Leaded Chip Carrier CY7C433–10PC P21 28-Lead (300-Mil) Molded DIP CY7C433–10VC V21 28-Lead (300-Mil) Molded SOJ CY7C433–15AC A32 32-Pin Thin Plastic Quad Flatpack CY7C433–15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C433–15JI J65 32-Lead Plastic Leaded Chip Carrier CY7C433–15PI P21 28-Lead (300-Mil) Molded DIP CY7C433–15DMB D22 28-Lead (300-Mil) CerDIP CY7C433–15LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C433–20AC A32 32-Pin Thin Plastic Quad Flatpack CY7C433–20JC J65 32-Lead Plastic Leaded Chip Carrier CY7C433–20PC P21 28-Lead (300-Mil) Molded DIP CY7C433–25JC J65 32-Lead Plastic Leaded Chip Carrier CY7C433–25PC P21 28-Lead (300-Mil) Molded DIP CY7C433–25VC V21 28-Lead (300-Mil) Molded SOJ CY7C433–25JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C433–30JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C433–30PC P21 28-Lead (300-Mil) Molded DIP CY7C433–30JI J65 32-Lead Plastic Leaded Chip Carrier CY7C433–30PI P21 28-Lead (300-Mil) Molded DIP CY7C433–30DMB D22 28-Lead (300-Mil) CerDIP CY7C433–30LMB L55 32-Pin Rectangular Leadless Chip Carrier CY7C433–40JC J65 32-Lead Plastic Leaded Chip Carrier CY7C433–40PC P21 28-Lead (300-Mil) Molded DIP CY7C433–40VC V21 28-Lead (300-Mil) Molded SOJ CY7C433–40JI J65 32-Lead Plastic Leaded Chip Carrier Industrial CY7C433–65JC J65 32-Lead Plastic Leaded Chip Carrier Commercial CY7C433–65PC P21 28-Lead (300-Mil) Molded DIP 17 Commercial Commercial Industrial Military Commercial Commercial Industrial Military Commercial CY7C419/21/25/29/33 MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameters Switching Characteristics Subgroups Parameters Subgroups VOH 1, 2, 3 tRC 9, 10, 11 VOL 1, 2, 3 tA 9, 10, 11 VIH 1, 2, 3 tRR 9, 10, 11 VIL Max. 1, 2, 3 tPR 9, 10, 11 IIX 1, 2, 3 tDVR 9, 10, 11 ICC 1, 2, 3 tWC 9, 10, 11 ICC1 1, 2, 3 tPW 9, 10, 11 ISB1 1, 2, 3 tWR 9, 10, 11 ISB2 1, 2, 3 tSD 9, 10, 11 IOS 1, 2, 3 tHD 9, 10, 11 tMRSC 9, 10, 11 tPMR 9, 10, 11 tRMR 9, 10, 11 tRPW 9, 10, 11 tWPW 9, 10, 11 tRTC 9, 10, 11 tPRT 9, 10, 11 tRTR 9, 10, 11 tEFL 9, 10, 11 tHFH 9, 10, 11 tFFH 9, 10, 11 tREF 9, 10, 11 tRFF 9, 10, 11 tWEF 9, 10, 11 tWFF 9, 10, 11 tWHF 9, 10, 11 tRHF 9, 10, 11 tRAE 9, 10, 11 tRPE 9, 10, 11 tWAF 9, 10, 11 tWPF 9, 10, 11 tXOL 9, 10, 11 tXOH 9, 10, 11 Document #: 38-00079-M 18 CY7C419/21/25/29/33 Package Diagrams 32-Lead Thin Plastic Quad Flat Pack A32 28-Lead (600-Mil) CerDIP D16 28-Lead (300-Mil) CerDIP D22 MIL-STD-1835 MIL-STD-1835 D- 10Config.A 19 D- 15 Config.A CY7C419/21/25/29/33 Package Diagrams (continued) 32-Lead Plastic Leaded Chip Carrier J65 32-Pin Rectangular Leadless Chip Carrier L55 MIL-STD-1835 C-12 28-Lead (600-Mil) Molded DIP P15 20 CY7C419/21/25/29/33 Package Diagrams (continued) 28-Lead (300-Mil) Molded DIP P21 28-Lead (300-Mil) Molded SOJ V21 © Cypress Semiconductor Corporation, 1997. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.