DATA SHEET DSG9500-000: Planar Beam Lead PIN Diode Applications: ● Designed for switching applications Features Low capacitance Low resistance ● Fast switching ● Oxide-nitride passivated ● Durable construction ● High voltage ● ● Description The DSG9500-000 is designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing of the junction permitting use in assemblies with some degree of moisture sealing. Absolute Maximum Ratings Characteristic The DSG9500-000 is ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multi-throw switches, phase shifters, limiters, attenuators and modulators. Value Operating temperature -65 °C to +150 °C Storage temperature -65 °C to +200 °C Power dissipation (derate linearly to zero @ 175 °C) 250 mW Typical lead strength 8 grams pull Low Capacitance Planar Beam Lead Diode Part Number DSG9500–000 Breakdown Voltage @ 10 µA (V) Capacitance Total @ 50 V, 1 MHz (pF) Series Resistance (From Ins. Loss @ 3 GHz, 50 mA)(1) Ω) (Ω Minority Carrier Lifetime IF = 10 mA, IR = 6 mA (ns) Min. Max. Max. Typ. 200 0.02 4.0 250 RF Switching Time TS (ns)(2) Outline Drawing Number 25 169-001 1. Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot. All diodes are characterized for capacitance at –50 V, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements. 2. TS measured from RF transition, 90% to 10%, in series configuration. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com Skyworks Proprietary and Confidential information. • Products and product information are subject to change without notice. • Nov. 10, 2003 1 DATA SHEET • DSG9500-000 Performance Data for DSG9500–000 38 Figures 1 and 2 show a single pole double-throw 1–18 GHz switch these diodes are mounted an Alumina, Duroid, or Teflon fiberglass 50 Ω microstrip circuits. Typical bonding methods include thermal compression bonding, parallel gap welding, and soldering. 36 Isolation Loss (dB) SPDT isolation curves are shown in Figure 3 and insertion loss in Figures 4 and 5. With proper transitions and bias circuits, VSWR is better than 2.0 to 1 through 18 GHz. 32 28 24 20 16 12 8 4 0 0 Switching Considerations Duroid Substrate 4 6 8 10 12 14 16 18 Frequency (GHz) The typical minority carrier lifetime of the DSG9500 diodes is 100 ns. With suitable drivers, the individual diodes can be switched from high impedance (off) to low RS (on) in about 10 ns. Beam Lead Pin 2 Figure 3. Isolation vs. Frequency, SPDT 2.5 50 Ω Glass Bead 50 Ω Transmission LIne Connecting Lead Figure 1. Typical SPDT Circuit Arrangement Insertion Loss (dB) 2.0 1.5 1.0 0.5 0 0 10 50 Bias Current (mA) Beam Lead Pin 0.005" Metal Conductor Preferred Beam Lead Orientation Figure 4. Diode Insertion Loss vs. Bias, SPST 18 GHz Duroid Figure 2. Typical Beam Lead Mounting Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 2 Nov. 10, 2003 • Skyworks Proprietary and Confidential information. • Products and product information are subject to change without notice. 100 DATA SHEET • DSG9500-000 Power Handling for DSG9500–000 Beam lead diodes are not suitable for high power operation because of high internal thermal impedance of about 600 °C/W. 1.4 Isolation Loss (dB) 1.2 1.0 0.8 0.6 For pulsed operation, the total RF plus bias voltage must not exceed the rated breakdown. Skyworks has made high power tests at 1 GHz with 1 µs pulses, 0.001 duty, with 200 V diodes. With 50 mA forward bias, there is no increase in insertion loss over the 0 dBm level with a peak power input of 50 W. In the open state, reverse bias voltage is required to keep the diode from “rectifying,” with resultant decrease in isolation and possible failure. Figure 7 shows allowed peak power versus reverse bias at 1 GHz. At this frequency, the required reverse voltage is almost equal to the peak RF voltage; at high frequency, the bias can be reduced somewhat. Experimentation is necessary. 100 0.4 0.2 0 2 4 6 8 10 12 14 16 18 Frequency (GHz) Figure 5. Diode Insertion Loss vs. Frequency, SPST 50 mA Bias00 Peak Power (W) 80 0 60 40 20 With maximum CW power dissipation of 250 mW, the DSG9500–000 diodes are normally rated at 2 W CW with linear derating between 25 °C and 150 °C. Figure 6 presents data on CW power handling as a function of bias and frequency. 0 0 50 100 Reverse Bias (V) Figure 7. Peak Power Handling, SPST 1 GHz 5000 0.4 V 10 0.1 V CW Power (Milliwatts) 2000 1000 169-001 10% increase in small signal insertion loss when biased at 50 mA 500 200 100 Cathode End Has Blunted Point 0.007 (0.18 mm) Max. 10% decrease in small signal insertion loss when biased at –1 V/–4 V 50 20 0.1 0.2 0.5 1.0 2.0 5.0 10 Frequency (GHz) Figure 6. Typical Series Switch Behavior at Room Temperature and Biased at 50 mA/1 V/4 V 0.004 (0.10 mm) 0.002 (0.05 mm) 20 0.010 (0.25 mm) Min. 0.011 (0.28 mm) Max. 0.035 (0.89 mm) 0.033 (0.84 mm) 0.010 (0.25 mm) Min. 0.004 (0.10 mm) 0.002 (0.05 mm) 0.0005 (0.013 mm) Max. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com Skyworks Proprietary and Confidential information. • Products and product information are subject to change without notice. • Nov. 10, 2003 3 DATA SHEET • DSG9500-000 Beam-Lead Diodes Handling Due to their small size, beam-lead devices are fragile and should be handled with extreme care. The individual plastic packages should be handled and opened carefully, so that no undue mechanical strain is applied to the packaged device. It is recommended that the beam-lead devices be handled through use of a vacuum pencil using an appropriate size vacuum needle or a pointed wooden stick such as a sharpened Q-tip or match stick. The device will adhere to the point and can easily be removed from the container and positioned accurately for bonding without damage. Such handling should be done under a binocular microscope with magnification in the range of 20X to 30X. Special handling precautions are also required to avoid electrical damage, such as static discharge. Bonding The DSG9500-000 can best be bonded to substrates by means of thermocompression bonding. Essentially this type of bonding involves pressing the gold beam of the device against the gold plated metalized substrate under proper conditions of heat and pressure so that a metallurgical bond joint between the two occurs. Procedure The beam-lead devices to be bonded should be placed on a clean, hard surface such as a microscope slide. It is recommended that the beam side of the device be down so that this side will be toward the substrate when bonded. The device can be picked up by pressing lightly against one beam with the heated tip. The substrate can then be appropriately positioned under the tip and the device brought down against the substrate, with proper pressure applied by means of the weld head. A bonding tip temperature in the 350 °C to 450 °C range is recommended along with a bonding force of 50 to 70 grams. The bonding time is in the range of 2 to 3 seconds. Optimum bonding conditions should be determined by trial and error to compensate for slight variations in the condition of the substrate, bonding tip, and the type of device being bonded. Equipment The heat and pressure are obtained through use of a silicon carbide bonding tip with a radius of two to three mils. Such an item is available from several commercial sources. In order to supply the required tip-travel and apply proper pressure, a standard miniature weld head can be used. Also available is a heated wedge shank which is held by the weld head and in turn holds the tip and supplies heat to it. The wedge shank is heated by means of a simple AC power supply or a pulse type heated tool. Substrate For optimum bonding a gold plated surface at least 100 microinches thick is necessary. Although it is possible to bond to relatively soft metalized substrate material such as epoxy-fiberglass, etc., optimum bonding occurs when a hard material such as ceramic can be used. Quality If a good bond has been obtained, it is impossible to separate the beam-lead device from the metalized substrate without damage. If the device is destructively removed, the beam will tear away, leaving the bonded portion attached to the substrate. Beam–Lead Packaging The DSG-9500-000 is shipped in 2" x 2" black gel packs. The beam-leads are mounted on the gel, the devices are covered with a piece of lint-free release paper, on top of which is placed a piece of conductive foam. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 4 Nov. 10, 2003 • Skyworks Proprietary and Confidential information. • Products and product information are subject to change without notice.