MXP1005 Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES DESCRIPTION Gold diffused for low forward voltage Epitaxial structure minimizes forward voltage drop Forward voltage decreases with radiation exposure Qualified for space applications Available in leaded configuration High voltage for series applications APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com W W W. Microsemi .COM Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device will be exposed to substantial radiation flux (space). For other applications, it may be operated at higher currents (see graph for Vf vs. If). A version with attached leads is available. Increases efficiency of photovoltaic arrays Protects photovoltaic cells from reverse voltage MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED) Description Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 135°C Junction Temperature Range Storage Temperature Range Symbol Max. Unit VRRM VRWM VR IF(ave) Tj Tstg 120 120 120 2.25 -65 to +150 -65 to +200 Volts Volts Volts Amps °C °C ELECTRICAL PARAMETERS Description Symbol Reverse (Leakage) Current (in dark) Copyright 2002 MXP1005.PDF, 2002-05-03 IR25 VR= 96 Vdc, Ta= 25°C IR150 VR= 96 Vdc, Ta= 150°C VF1 IF= 2. 25 A, Ta= 25°C Cj1 BVR VR= 4 Vdc IR= 200 µA, Ta= 25°C Min 120 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Typ. Max Unit 2 10 4 8 µA mA 720 840 mV 300 160 600 pF V Page 1 MXP1005 Forward Voltage pulse test, pw= 300 µs Junction Capacitance Breakdown Voltage Conditions MXP1005 Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps SANTA ANA DIVISION P RODUCT P REVIEW W W W. Microsemi .COM Mechanical Outline MXP1005 die dimensions in mils before sawing 160 147 metal pad (anode) 13 0 0 13 MECHANICALS 147 160 die thickness is nominal 4.5 to 5.5 mils Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 2 MXP1005 Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps SANTA ANA DIVISION P RODUCT P REVIEW W W W. Microsemi .COM MXP1005 typical capacitance vs. voltage 350 capacitance (pF) 300 250 200 150 100 0 10 20 30 40 50 60 70 80 90 100 Vr (V) MXP1005 typical reverse current vs. temperature 1.00E-02 Ir @ 96V (A) 1.00E-03 1.00E-04 1.00E-05 25 50 75 100 125 150 Ta (deg. C) Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 3 GRAPHS 1.00E-06 MXP1005 Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps SANTA ANA DIVISION P RODUCT P REVIEW W W W. Microsemi .COM MXP1005 typical forward characteristic 0.90 Vf (V) 0.85 0.80 0.75 0.70 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 If (A) GRAPHS Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 4 MXP1005 Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps SANTA ANA DIVISION P RODUCT P REVIEW NOTES W W W. Microsemi .COM NOTES Copyright 2002 MXP1005.PDF, 2002-05-03 Microsemi Santa Ana Division 2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 5