2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSARW80G20A (MX028) Features • • • • • • Oxide passivated structure for very low leakage currents Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance available with TXV (MSARW80G20AV) or S-level (MSARW80G20AS) screening i.a.w. Microsemi internal procedure PS11.50 200 Volts 80 Amps 37 ns ULTRAFAST RECTIFIER Maximum Ratings @ 25°°C (unless otherwise specified) DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 135°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case SYMBOL MAX. UNIT VRRM VRWM VR IF(ave) IFSM Tj Tstg θJC 200 200 200 80 250 -65 to +200 -65 to +200 0.8 (typ.0.35) Volts Volts Volts Amps Amps °C °C °C/W Mechanical Outline Datasheet# MSC1459.pdf rev1 June, 2000 MSARW80G20A (MX028) Electrical Parameters DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 µs d/c≤ 2% SYMBOL IR25 IR100 VF1 VF2 VF3 VF4 VF5 VF6 Cj1 trr Junction Capacitance Reverse Recovery Time Reverse Recovery Current Breakdown Voltage CONDITIONS VR= 200 Vdc, Tc= 25°C VR= 200 Vdc, Tc= 100°C IF= 5 A, Tc= 25°C IF= 25 A, Tc= 25°C IF= 50 A, Tc= 25°C IF= 80 A, Tc= 25°C IF= 50 A, Tc= -55°C IF= 50 A, Tc= 100°C VR= 10 Vdc IF= 9.9A, dIF/dt= 200A/µs, Vr= 30V IF= 9.9A, dIF/dt= 200A/µs, Vr= 30V IR= 250 µA, Tc= 25°C IRM(rec) BVR MIN TYP. 720 860 950 1050 MAX 250 10 750 900 1050 35 500 37 UNIT µA mA mV mV mV mV mV mV pF ns 5 5.5 A 1150 830 200 V MSARW80G20A typ VF vs IF vs TC VF (V) 0.950 TC=0C 0.900 TC=25C 0.850 TC=80C 0.800 0.750 0.700 0.650 0.600 0.550 0.500 0 5 10 15 20 25 30 35 40 IF (A) Datasheet# MSC1459.pdf rev1 June, 2000