PRELIMINARY MXP4000 Series InGaAs/InP PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION The four devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 156 Mb/sec (active area of 300um2), 622 Mb/sec (active area of 200 um2), 2.5 Gb/sec (active area of 75 um2), 10 Gb/sec (active area of 40 um2), The MXP4000 series of photodiodes are originally offered in die form for manufacturers of optical transponders, supervisory VCSEL monitoring circuits, and combination PIN Photodiode-transimpedance amplifier hybrids. !"Low Dark Current !"Extremely low capacitance !"Wide bandwidth !"Fast response time APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS !"1310nm Fiber Optic Applications !"1550nm Fiber Optic Applications !"Optical Transponders W W W . Microsemi .COM Microsemi’s InGaAs/InP PIN Photodiode chips are ideal for wide bandwidth 1310nm and 1550nm optical networking applications. KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Item Active Area(Dia.) Photo Sensitive Area Detection Range Responsivity Responsivity Dark Current Capacitance Rise/Fall Time Bandwidth Breakdown Voltage Chip Size Bonding Pad Size Sym PART RATINGS AND CHARACTERISTICS MXP4000 MXP4001 MXP4002 MXP4003 300 200 75 40 Unit µm Res Res ID 0.9 0.9 10 0.85 0.9 4 0.8 0.9 0.5 0.8 0.9 0.2 A/W A/W nA C tr/tf 5.0 2 ns 0.156 20 2 0.5 ns 0.622 20 0.5 100 ps 2.5 20 0.2 20 ps 10 20 pF Gb/Sec V 0.020 x 0.020 100 0.020 x 0.020 100 0.014 x 0.014 40 0.014 x 0.014 40 Inches um x um VB Test Condition — — Resp. @ 1300nm Resp. @ 1550nm VR @-5V IR @10uA MXP4000 SERIES Copyright 2000 MSC1639.PDF 2000-12-12 Microsemi Opto Electronics Products Group 2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256 http://www.microsemi.com/opto Page 1