ADE-208-027C(Z) HSM123 Silicon Epitaxial Planar Diode for High Speed Switching Rev. 3 Aug. 1995 Features Pin Arrangement • Low capacitance, proof against high voltage. • Fast recovery time. • MPAK package is suitable for high density surface mounting and high speed assembly. 3 1 2 (Top View) Ordering Information Type No. Laser Mark Package Code HSM123 A9 MPAK 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings ** (Ta = 25°C) Item Symbol Peak reverse voltage VRM Value Unit Reverse voltage VR 80 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM * Average forward current Io 100 mA Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C 85 V 4 A * Within 1µs forward surge current. ** Per one device Electrical Characteristics * (Ta = 25°C) Item Symbol Min Typ Max VF1 — 0.70 1.0 Unit Test Condition IF = 10 mA VF2 — 0.79 1.0 VF3 — 0.85 1.2 Reverse current IR — — 0.1 µA VR = 80 V Capacitance C — 1.0 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 3.0 ns IF= 10mA, VR=6V, RL=50Ω Forward voltage * Per one device V IF = 50 mA IF = 100 mA HSM123 -2 10 -3 -6 -4 10 10 Reverse current I R (A) Forward current I F (A) 10 -5 -6 10 10 10 10 -7 10 -7 10 10 -8 -8 -9 -9 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage 10 1.0 -1 10 1.0 10 60 20 80 40 Reverse voltage VR (V) f=1MHz Capacitance C (pF) -5 10 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 2 10 0 100 HSM123 Package Dimensions 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Unit: mm + 0.10 0.16 – 0.06 + 0.2 – 0.6 2.8 HITACHI Code MPAK(1) + 0.2 1.9 0.3 2.8 +– 0.1 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 1.1 – 0.1 1 0.95 0.1 0.65 +– 0.3 2 0.95 0 – 0.10 0.3 A 9 1.5 3 JEDEC Code — EIAJ Code SC-59A Weight (g) 0.011