Bulletin I0210J 12/98 IR250SG12HCB PHASE CONTROL THYRISTORS Junction Size: Square 250 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: n. a. Major Ratings and Characteristics Parameters Units Test Conditions V TM Maximum On-state Voltage 1.3 V T J = 25°C, I T = 25 A V RRM Reverse Breakdown Voltage 1200 V T J = 25°C, IRRM = 100 µA IGT Max. Required DC Gate Current to Trigger 100 mA TJ = 25° C, anode supply = 6 V, resistive load V GT Max. Required DC Gate Voltage to Trigger 2V TJ = 25° C, anode supply = 6 V, resistive load IH Holding Current Range IL Maximum Latching Current 5 to 200 mA Anode supply = 6 V, resistive load 400 mA Anode supply = 6 V, resistive load (1) (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Nominal Front Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Chip Dimensions 250 x 250 mils (see drawing) Wafer Diameter 100 mm, with std. <110> flat Wafer Thickness 370 µm ± 10 µm Maximum Width of Sawing Line 130 µm Reject Ink Dot Size 0.25 mm diameter minimum Ink Dot Location See drawing Recommended Storage Environment Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR250SG12HCB Bulletin I0210J 12/98 Ordering Information Table Device Code IR 250 S G 12 H CB 1 2 3 4 5 6 7 1 - International Rectifier Device 2 - Chip Dimension in Mils 3 - Type of Device: S = Solderable SCR 4 - Passivation Process: G = Glassivated MESA 5 - Voltage code: Code x 100 = VRRM 6 - Metallization: H = Silver (Anode) - Silver (Cathode) 7 - CB = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Outline Table All dimensions are in millimiters 2 www.irf.com IR250SG12HCB Bulletin I0210J 12/98 Wafer Layout TOP VIEW N° 148 Basic Cells All dimensions are in millimiters www.irf.com 3