Bulletin I0201J rev. A 02/97 IR370BG12DCB PHASE CONTROL THYRISTORS Junction Size: Square 370 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: IRKT56 Series Major Ratings and Characteristics Parameters Units Test Conditions V TM Maximum On-state Voltage 1.2 V T J = 25°C, I T = 25 A V RRM Reverse Breakdown Voltage 1200 V T J = 25°C, IRRM = 100 µA I GT Max. Required DC Gate Current to Trigger 150 mA TJ = 25° C, anode supply = 6 V, resistive load V GT Max. Required DC Gate Voltage to Trigger 2V TJ = 25° C, anode supply = 6 V, resistive load IH Holding Current Range IL Maximum Latching Current 5 to 200 mA Anode supply = 6 V, resistive load 400 mA Anode supply = 6 V, resistive load (1) (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Nominal Front Metal Composition, Thickness 100% Al, (20 µm) Chip Dimensions 370 x 370 mils (see drawing) Wafer Diameter 100 mm, with std. <110> flat Wafer Thickness 370 µm ± 10 µm Maximum Width of Sawing Line 130 µm Reject Ink Dot Size 0.25 mm diameter minimum Ink Dot Location See drawing Recommended Storage Environment Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR370BG12DCB Bulletin I0201J rev. A 02/97 Ordering Information Table Device Code IR 370 B G 12 D CB 1 2 3 4 5 6 7 1 - International Rectifier Device 2 - Chip Dimension in Mils 3 - Type of Device: B = Wire Bondable SCR 4 - Passivation Process: G = Glassivated MESA 5 - Voltage code: Code x 100 = VRRM 6 - Metallization: D = Silver (Anode) - Aluminium (Cathode) 7 - CB = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Outline Table All dimensions are in microns (mils) 2 www.irf.com IR370BG12DCB Bulletin I0201J rev. A 02/97 Wafer Layout TOP VIEW N° 69 Basic Cells All dimensions are in millimiters www.irf.com 3