PD- 91773 IRG4CC81UB IRG4CC81UB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed 6" Wafer G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 4.5V Max. 600V Min. 3.0V Min., 6.0V Max. 300 µA Max. ± 11 µA Max. Test Conditions IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA ) 99% Al, 1% Si (4 microns) 0.523" x 0.523" 150mm, with std. < 100 > flat .015" + / -.003" 01-5249 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : GA200TS60U Die Outline NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 2. CONTROLLING DIMENSION: (INCH). 3. LETTER DESIGNATION: S = SOURCE SK = SOURCE KELVIN G = GATE IS = CURRENT SENSE 4. DIMENSIONAL TOLERANCES: BONDING PADS: < 0.635 TOLERANCE = +/- 0.013 WIDTH < (.0250) TOLERANCE = +/- (.0005) & < 0.635 TOLERANCE = +/- 0.025 LENGTH < (.0250) TOLERANCE = +/- (.0010) OVERALL DIE: < 1.270 TOLERANCE = +/- 0.102 WIDTH < (.050) TOLERANCE = +/- (.004) & < 0.635 TOLERANCE = +/- 0.203 LENGTH < (.050) TOLERANCE = +/- (.008) 5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III 10/6/98