ETC IRGCC30FE

PD-9.1430
TARGET
IRGCC30FE
IRGCC30FE IGBT Die in Wafer Form
C
600 V
Size 3
Fast Speed
5" Wafer
G
E
Electrical Characteristics ( Wafer Form )
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
IGES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
Test Conditions
2.7V Max.
IC = 17A, TJ = 25°C, V GE = 15V
600V Min.
TJ = 25°C, ICES = 250µA, VGE = 0V
3.0V Min., 5.5V Max.
V GE = VCE , TJ =25°C, IC =250µA
250 µA Max.
TJ = 25°C, VCE = 600V
± 500 nA Max.
TJ = 25°C, VGE = +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Cr-Ni-Ag (1 kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.133" x 0.176"
125mm, with std. < 100 > flat
.015" + / -.003"
01-5120
100 Microns
0.25mm Diameter Minimum
Consistant throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
Reference Standard IR packaged part ( for design ) : IRGBC30F
Die Outline
INK DOT
LOCATION
1.12
(.044 )
2.34
(.92 )
EM ITTER
GATE
0.74
(.029 )
2X
3.38
(.133 )
4.47
(.176 )
NOTES :
1. ALL DIM ENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. LETTER DESIGNATION :
S = SOURCE
G = GATE
4. DIMENSIONAL TOLERANCES
BONDING PADS : < 0.635 TOLERANCE = +/- 0.013
WIDTH
< (.0250 ) TOLERANCE =+/- (.0005 )
&
> 0.635 TOLERANCE = +/- 0.025
LENGTH
> (.0250 ) TOLERANCE = +/- (.0010 )
OVERALL DIE
< 1.270 TOLERANCE = +/- 0.102
WIDTH
< (.050 ) TOLERANCE = +/- (.004 )
&
> 0.635 TOLERANCE = +/- 0.203
LENGTH
> (.050 ) TOLERANCE = +/- (.008 )
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III