PD-9.1430 TARGET IRGCC30FE IRGCC30FE IGBT Die in Wafer Form C 600 V Size 3 Fast Speed 5" Wafer G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 2.7V Max. IC = 17A, TJ = 25°C, V GE = 15V 600V Min. TJ = 25°C, ICES = 250µA, VGE = 0V 3.0V Min., 5.5V Max. V GE = VCE , TJ =25°C, IC =250µA 250 µA Max. TJ = 25°C, VCE = 600V ± 500 nA Max. TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-Ni-Ag (1 kA-4kA-6kA ) 99% Al, 1% Si (3 microns) 0.133" x 0.176" 125mm, with std. < 100 > flat .015" + / -.003" 01-5120 100 Microns 0.25mm Diameter Minimum Consistant throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination Reference Standard IR packaged part ( for design ) : IRGBC30F Die Outline INK DOT LOCATION 1.12 (.044 ) 2.34 (.92 ) EM ITTER GATE 0.74 (.029 ) 2X 3.38 (.133 ) 4.47 (.176 ) NOTES : 1. ALL DIM ENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ) 2. CONTROLLING DIMENSION : ( INCH ) 3. LETTER DESIGNATION : S = SOURCE G = GATE 4. DIMENSIONAL TOLERANCES BONDING PADS : < 0.635 TOLERANCE = +/- 0.013 WIDTH < (.0250 ) TOLERANCE =+/- (.0005 ) & > 0.635 TOLERANCE = +/- 0.025 LENGTH > (.0250 ) TOLERANCE = +/- (.0010 ) OVERALL DIE < 1.270 TOLERANCE = +/- 0.102 WIDTH < (.050 ) TOLERANCE = +/- (.004 ) & > 0.635 TOLERANCE = +/- 0.203 LENGTH > (.050 ) TOLERANCE = +/- (.008 ) 5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III