PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 3.8V Max. IC = 20A, TJ = 25°C, V GE = 15V 1200V Min. TJ = 25°C, ICES = 250µA, VGE = 0V 3.0V Min., 6.0V Max. V GE = VCE , TJ =25°C, IC =250µA 250 µA Max. TJ = 25°C, VCE = 1200V ± 500 nA Max. TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-Ni-Ag ( 1kA-4kA-6kA ) 99% Al, 1% Si (3 microns) 0.257" x 0.260" 125mm, with std. < 100 > flat .015" + / -.003" 01-5104 100 Microns 0.25mm Diameter Minimum See Die Outline drawing below Store in original container, in dessicated nitrogen, with no contamination Reference Standard IR packaged part ( for design ) : IRGPH50K Die Outline INK DOT LOCATION 1.78 (.070 ) 0.56 (.022 ) 3.01 (.119 ) EMITTER G 6.53 (.257 ) 0.58 (.023 ) 6.60 (.260 ) NOTES : 1. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES ) 2. CONTRO LLING DIMENSION : ( INCH ) 3. LETTER DESIGNATION : S = SO URCE G = GATE 4. DIMENSIONAL TOLERANCES BONDING PADS : < 0.635 TO LERANCE = +/- 0.013 W IDTH < (.0250 ) TOLERANCE =+/- (.0005 ) & > 0.635 TOLERANCE = +/- 0.025 LENGTH > (.0250 ) TOLERANCE = +/- (.0010 ) OVERALL DIE < 1.270 TOLERANCE = +/- 0.102 W IDTH < (.050 ) TOLERANCE = +/- (.004 ) & > 0.635 TOLERANCE = +/- 0.203 LENGTH > (.050 ) TOLERANCE = +/- (.008 ) 5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III