ETC IRGCH50SE

PD-9.1439
TARGET
IRGCH50KE
IRGCH50KE IGBT Die in Wafer Form
C
1200 V
Size 5
Ultra-Fast Speed
5" Wafer
G
E
Electrical Characteristics ( Wafer Form )
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
IGES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
Test Conditions
3.8V Max.
IC = 20A, TJ = 25°C, V GE = 15V
1200V Min.
TJ = 25°C, ICES = 250µA, VGE = 0V
3.0V Min., 6.0V Max.
V GE = VCE , TJ =25°C, IC =250µA
250 µA Max.
TJ = 25°C, VCE = 1200V
± 500 nA Max.
TJ = 25°C, VGE = +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.257" x 0.260"
125mm, with std. < 100 > flat
.015" + / -.003"
01-5104
100 Microns
0.25mm Diameter Minimum
See Die Outline drawing below
Store in original container, in dessicated
nitrogen, with no contamination
Reference Standard IR packaged part ( for design ) : IRGPH50K
Die Outline
INK DOT
LOCATION
1.78
(.070 )
0.56
(.022 )
3.01
(.119 )
EMITTER
G
6.53
(.257 )
0.58
(.023 )
6.60
(.260 )
NOTES :
1. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES )
2. CONTRO LLING DIMENSION : ( INCH )
3. LETTER DESIGNATION :
S = SO URCE
G = GATE
4. DIMENSIONAL TOLERANCES
BONDING PADS : < 0.635 TO LERANCE = +/- 0.013
W IDTH
< (.0250 ) TOLERANCE =+/- (.0005 )
&
> 0.635 TOLERANCE = +/- 0.025
LENGTH
> (.0250 ) TOLERANCE = +/- (.0010 )
OVERALL DIE
< 1.270 TOLERANCE = +/- 0.102
W IDTH
< (.050 ) TOLERANCE = +/- (.004 )
&
> 0.635 TOLERANCE = +/- 0.203
LENGTH
> (.050 ) TOLERANCE = +/- (.008 )
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III