DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor/Schottky diode module Product specification Supersedes data of 2002 Oct 28 2003 Jul 04 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND PINNING FEATURES • 600 mW total power dissipation PIN DESCRIPTION • High current capability 1 emitter • Reduces required PCB area 2 not connected • Reduced pick and place costs 3 cathode • Small plastic SMD package. 4 anode 5 base 6 collector Transistor: • Low collector-emitter saturation voltage. Diode: • Ultra high-speed switching • Very low forward voltage handbook, halfpage 6 5 4 • Guard ring protected. 4 3 6 APPLICATIONS 5 1 • DC/DC convertors 1 • Inductive load drivers 2 3 MGU865 • General purpose load drivers • Reverse polarity protection circuits. Marking code: B3. Fig.1 Simplified outline (SOT457) and symbol. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4010PD. 2003 Jul 04 2 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO collector-base voltage open emitter − 40 VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current − 1 A Tj junction temperature − 150 °C V Schottky barrier diode VR continuous reverse voltage − 20 V IF continuous forward current − 1 A IFSM non repetitive peak forward current − 5 A Tj junction temperature − 125 °C − 600 mW −65 +150 °C −65 +125 °C t = 8.3 ms half sinewave; JEDEC method Combined device Ptot total power dissipation Tstg storage temperature Tamb operating ambient temperature Tamb ≤ 25 °C; note 1 note 2 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air; note 1 VALUE UNIT 208 K/W Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2003 Jul 04 3 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT NPN transistor − collector-base cut-off current VCB = 40 V; IE = 0; Tamb = 150 °C − − 50 µA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 − − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 300 − − VCEsat collector-emitter saturation voltage VCB = 40 V; IE = 0 − ICBO 100 nA VCE = 5 V; IC = 500 mA 300 − 900 VCE = 5 V; IC = 1 A 200 − − IC = 100 mA; IB = 1 mA − − 80 mV IC = 500 mA; IB = 50 mA − − 110 mV IC = 1 A; IB = 100 mA − − 210 mV VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.2 V RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 260 <220 mΩ VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − − 1.1 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie =0 ; f = 1 MHz − − 10 pF IF = 10 mA; note 1 − 240 270 mV IF = 100 mA; note 1 − 300 350 mV IF = 1000 mA; see Fig.7; note 1 − 480 550 mV VR = 5 V; note 1 − 5 10 µA VR = 8 V; note 1 − 7 20 µA VR = 15 V; see Fig.8; note 1 − 10 50 µA VR = 5 V; f = 1 MHz; see Fig.9 − 19 25 pF Schottky barrier diode VF IR Cd continuous forward voltage reverse current diode capacitance Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Jul 04 4 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND GRAPHICAL DATA MHC077 1000 MHC078 10 handbook, halfpage handbook, halfpage hFE VBE (V) (1) 800 600 (2) 1 (1) (2) 400 (3) (3) 200 0 10−1 1 102 10 10−1 10−1 103 104 IC (mA) 1 NPN transistor; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. NPN transistor; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC079 103 handbook, halfpage 10 102 Base-emitter voltage as a function of collector current; typical values. MHC080 102 handbook, halfpage VCEsat (mV) 103 104 IC (mA) RCEsat (Ω) 102 10 (1) (2) (3) 10 1 (1) (2) (3) 1 1 10 102 103 IC (mA) 10−1 10−1 104 1 NPN transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. NPN transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Jul 04 5 10 102 103 104 IC (mA) Equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification NPN transistor/Schottky diode module MHC081 400 PMEM4010ND MHC311 103 handbook, halfpage handbook, halfpage IF (mA) fT (MHz) 300 102 200 10 100 1 (1) 10−1 0 200 0 400 600 800 1000 IC (mA) (2) 0 0.2 NPN transistor; VCE = 10 V. Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Fig.7 Transition frequency as a function of collector current. MHC312 105 handbook, halfpage (3) 0.4 VF (V) 0.6 Forward current as a function of forward voltage; typical values. MHC313 80 handbook, halfpage IR (µA) Cd (pF) (1) 104 60 (2) 103 40 102 (3) 20 10 1 0 5 10 15 20 0 25 0 5 10 15 VR (V) Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Schottky barrier diode; f = 1 MHz; Tamb = 25 °C. Fig.8 Fig.9 Reverse current as a function of reverse voltage; typical values. 2003 Jul 04 6 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND APPLICATION INFORMATION VCC handbook, halfpage handbook, halfpage Vin Vout CONTROLLER IN MGU863 MDB577 Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode. Fig.10 DC/DC convertor. 2003 Jul 04 7 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 Jul 04 REFERENCES IEC JEDEC EIAJ SC-74 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jul 04 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp10 Date of release: 2003 Jul 04 Document order number: 9397 750 11317