PHILIPS PMEM4010ND

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
PMEM4010ND
NPN transistor/Schottky diode
module
Product data sheet
Supersedes data of 2002 Oct 28
2003 Jul 04
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
FEATURES
PMEM4010ND
PINNING
• 600 mW total power dissipation
PIN
DESCRIPTION
• High current capability
1
emitter
• Reduces required PCB area
2
not connected
• Reduced pick and place costs
3
cathode
• Small plastic SMD package.
4
anode
5
base
6
collector
Transistor:
• Low collector-emitter saturation voltage.
Diode:
• Ultra high-speed switching
• Very low forward voltage
handbook, halfpage 6
5
4
• Guard ring protected.
4
3
6
APPLICATIONS
5
1
• DC/DC convertors
1
• Inductive load drivers
2
3
MGU865
• General purpose load drivers
• Reverse polarity protection circuits.
Marking code: B3.
Fig.1 Simplified outline (SOT457) and symbol.
DESCRIPTION
Combination of an NPN transistor with low VCEsat and high
current capability and a planar Schottky barrier diode with
an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package.
PNP complement: PMEM4010PD.
2003 Jul 04
2
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
PMEM4010ND
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IBM
peak base current
−
1
A
Tj
junction temperature
−
150
°C
Schottky barrier diode
VR
continuous reverse voltage
−
20
V
IF
continuous forward current
−
1
A
IFSM
non repetitive peak forward current
−
5
A
Tj
junction temperature
−
125
°C
−
600
mW
−65
+150
°C
−65
+125
°C
t = 8.3 ms half sinewave;
JEDEC method
Combined device
Ptot
total power dissipation
Tstg
storage temperature
Tamb
operating ambient temperature
Tamb ≤ 25 °C; note 1
note 2
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses
PR are significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF (AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air; note 1
VALUE
UNIT
208
K/W
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2003 Jul 04
3
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
PMEM4010ND
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
NPN transistor
VCB = 40 V; IE = 0
−
−
100
nA
VCB = 40 V; IE = 0; Tamb = 150 °C
−
−
50
µA
VCE = 30 V; IB = 0
−
−
100
nA
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
DC current gain
VCE = 5 V; IC = 1 mA
300
−
−
VCE = 5 V; IC = 500 mA
300
−
900
VCE = 5 V; IC = 1 A
200
−
−
IC = 100 mA; IB = 1 mA
−
−
80
mV
IC = 500 mA; IB = 50 mA
−
−
110
mV
IC = 1 A; IB = 100 mA
−
−
210
mV
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
IEBO
hFE
VCEsat
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
−
−
1.2
V
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
260
<220
mΩ
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1 A
−
−
1.1
V
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie =0 ; f = 1 MHz
−
−
10
pF
IF = 10 mA; note 1
−
240
270
mV
IF = 100 mA; note 1
−
300
350
mV
IF = 1000 mA; see Fig.7; note 1
−
480
550
mV
VR = 5 V; note 1
−
5
10
µA
VR = 8 V; note 1
−
7
20
µA
VR = 15 V; see Fig.8; note 1
−
10
50
µA
VR = 5 V; f = 1 MHz; see Fig.9
−
19
25
pF
Schottky barrier diode
VF
IR
Cd
continuous forward voltage
reverse current
diode capacitance
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Jul 04
4
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
PMEM4010ND
GRAPHICAL DATA
MHC077
1000
MHC078
10
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
(1)
800
600
(2)
1
(1)
(2)
400
(3)
(3)
200
0
10−1
1
102
10
10−1
10−1
103
104
IC (mA)
1
NPN transistor; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
NPN transistor; VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MHC079
103
handbook, halfpage
10
102
Base-emitter voltage as a function of
collector current; typical values.
MHC080
102
handbook, halfpage
VCEsat
(mV)
103
104
IC (mA)
RCEsat
(Ω)
102
10
(1)
(2)
(3)
10
1
(1)
(2)
(3)
1
1
10
102
103
IC (mA)
10−1
10−1
104
1
NPN transistor; IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
NPN transistor; IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Jul 04
5
10
102
103
104
IC (mA)
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
MHC081
400
PMEM4010ND
MHC311
103
handbook, halfpage
handbook, halfpage
IF
(mA)
fT
(MHz)
300
102
200
10
100
1
(1)
10−1
0
200
0
400
600
800
1000
IC (mA)
(2)
0
0.2
NPN transistor; VCE = 10 V.
Schottky barrier diode.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6
Fig.7
Transition frequency as a function of
collector current.
MHC312
105
handbook, halfpage
(3)
0.4
VF (V)
0.6
Forward current as a function of forward
voltage; typical values.
MHC313
80
handbook, halfpage
IR
(µA)
Cd
(pF)
(1)
104
60
(2)
103
40
102
(3)
20
10
1
0
5
10
15
20
0
25
0
5
10
15
VR (V)
Schottky barrier diode.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Schottky barrier diode; f = 1 MHz; Tamb = 25 °C.
Fig.8
Fig.9
Reverse current as a function of reverse
voltage; typical values.
2003 Jul 04
6
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
PMEM4010ND
APPLICATION INFORMATION
VCC
handbook, halfpage
handbook, halfpage
Vin
Vout
CONTROLLER
IN
MGU863
MDB577
Fig.11 Inductive load driver (relays, motors,
buzzers) with free-wheeling diode.
Fig.10 DC/DC convertor.
2003 Jul 04
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NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
PMEM4010ND
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
X
v M A
4
5
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2003 Jul 04
REFERENCES
IEC
JEDEC
EIAJ
SC-74
8
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
PMEM4010ND
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2003 Jul 04
9
NXP Semiconductors
Customer notification
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made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/02/pp10
Date of release: 2003 Jul 04
Document order number: 9397 750 11317