DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PMEM4010ND NPN transistor/Schottky diode module Product data sheet Supersedes data of 2002 Oct 28 2003 Jul 04 NXP Semiconductors Product data sheet NPN transistor/Schottky diode module FEATURES PMEM4010ND PINNING • 600 mW total power dissipation PIN DESCRIPTION • High current capability 1 emitter • Reduces required PCB area 2 not connected • Reduced pick and place costs 3 cathode • Small plastic SMD package. 4 anode 5 base 6 collector Transistor: • Low collector-emitter saturation voltage. Diode: • Ultra high-speed switching • Very low forward voltage handbook, halfpage 6 5 4 • Guard ring protected. 4 3 6 APPLICATIONS 5 1 • DC/DC convertors 1 • Inductive load drivers 2 3 MGU865 • General purpose load drivers • Reverse polarity protection circuits. Marking code: B3. Fig.1 Simplified outline (SOT457) and symbol. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4010PD. 2003 Jul 04 2 NXP Semiconductors Product data sheet NPN transistor/Schottky diode module PMEM4010ND LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current − 1 A Tj junction temperature − 150 °C Schottky barrier diode VR continuous reverse voltage − 20 V IF continuous forward current − 1 A IFSM non repetitive peak forward current − 5 A Tj junction temperature − 125 °C − 600 mW −65 +150 °C −65 +125 °C t = 8.3 ms half sinewave; JEDEC method Combined device Ptot total power dissipation Tstg storage temperature Tamb operating ambient temperature Tamb ≤ 25 °C; note 1 note 2 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air; note 1 VALUE UNIT 208 K/W Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2003 Jul 04 3 NXP Semiconductors Product data sheet NPN transistor/Schottky diode module PMEM4010ND ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT NPN transistor VCB = 40 V; IE = 0 − − 100 nA VCB = 40 V; IE = 0; Tamb = 150 °C − − 50 µA VCE = 30 V; IB = 0 − − 100 nA emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA DC current gain VCE = 5 V; IC = 1 mA 300 − − VCE = 5 V; IC = 500 mA 300 − 900 VCE = 5 V; IC = 1 A 200 − − IC = 100 mA; IB = 1 mA − − 80 mV IC = 500 mA; IB = 50 mA − − 110 mV IC = 1 A; IB = 100 mA − − 210 mV ICBO collector-base cut-off current ICEO collector-emitter cut-off current IEBO hFE VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.2 V RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 260 <220 mΩ VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − − 1.1 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie =0 ; f = 1 MHz − − 10 pF IF = 10 mA; note 1 − 240 270 mV IF = 100 mA; note 1 − 300 350 mV IF = 1000 mA; see Fig.7; note 1 − 480 550 mV VR = 5 V; note 1 − 5 10 µA VR = 8 V; note 1 − 7 20 µA VR = 15 V; see Fig.8; note 1 − 10 50 µA VR = 5 V; f = 1 MHz; see Fig.9 − 19 25 pF Schottky barrier diode VF IR Cd continuous forward voltage reverse current diode capacitance Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Jul 04 4 NXP Semiconductors Product data sheet NPN transistor/Schottky diode module PMEM4010ND GRAPHICAL DATA MHC077 1000 MHC078 10 handbook, halfpage handbook, halfpage hFE VBE (V) (1) 800 600 (2) 1 (1) (2) 400 (3) (3) 200 0 10−1 1 102 10 10−1 10−1 103 104 IC (mA) 1 NPN transistor; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. NPN transistor; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC079 103 handbook, halfpage 10 102 Base-emitter voltage as a function of collector current; typical values. MHC080 102 handbook, halfpage VCEsat (mV) 103 104 IC (mA) RCEsat (Ω) 102 10 (1) (2) (3) 10 1 (1) (2) (3) 1 1 10 102 103 IC (mA) 10−1 10−1 104 1 NPN transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. NPN transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Jul 04 5 10 102 103 104 IC (mA) Equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet NPN transistor/Schottky diode module MHC081 400 PMEM4010ND MHC311 103 handbook, halfpage handbook, halfpage IF (mA) fT (MHz) 300 102 200 10 100 1 (1) 10−1 0 200 0 400 600 800 1000 IC (mA) (2) 0 0.2 NPN transistor; VCE = 10 V. Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Fig.7 Transition frequency as a function of collector current. MHC312 105 handbook, halfpage (3) 0.4 VF (V) 0.6 Forward current as a function of forward voltage; typical values. MHC313 80 handbook, halfpage IR (µA) Cd (pF) (1) 104 60 (2) 103 40 102 (3) 20 10 1 0 5 10 15 20 0 25 0 5 10 15 VR (V) Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Schottky barrier diode; f = 1 MHz; Tamb = 25 °C. Fig.8 Fig.9 Reverse current as a function of reverse voltage; typical values. 2003 Jul 04 6 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet NPN transistor/Schottky diode module PMEM4010ND APPLICATION INFORMATION VCC handbook, halfpage handbook, halfpage Vin Vout CONTROLLER IN MGU863 MDB577 Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode. Fig.10 DC/DC convertor. 2003 Jul 04 7 NXP Semiconductors Product data sheet NPN transistor/Schottky diode module PMEM4010ND PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 Jul 04 REFERENCES IEC JEDEC EIAJ SC-74 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet NPN transistor/Schottky diode module PMEM4010ND DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp10 Date of release: 2003 Jul 04 Document order number: 9397 750 11317