ETC UNR2116R

Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
(UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z)
Silicon PNP epitaxial planer transistor
Unit: mm
+0.2
2.8 –0.3
+0.25
0.65±0.15
1.5 –0.05
0.65±0.15
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
●
■ Absolute Maximum Ratings
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
1.45
0.95
+0.1
0.4 –0.05
+0.1
0.16 –0.06
1.1 –0.1
Marking Symbol (R1)
UNR2111
6A
10kΩ
UNR2112
6B
22kΩ
UNR2113
6C
47kΩ
UNR2114
6D
10kΩ
UNR2115
6E
10kΩ
UNR2116
6F
4.7kΩ
UNR2117
6H
22kΩ
UNR2118
6I
0.51kΩ
UNR2119
6K
1kΩ
UNR2110
6L
47kΩ
UNR211D
6M
47kΩ
UNR211E
6N
47kΩ
UNR211F
6O
4.7kΩ
UNR211H
6P
2.2kΩ
UNR211L
6Q
4.7kΩ
UNR211M
EI
2.2kΩ
UNR211N
EW
4.7kΩ
UNR211T
EY
22kΩ
UNR211V
FC
2.2kΩ
UNR211Z
FE
4.7kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
0 to 0.1
●
2
+0.2
■ Resistance by Part Number
3
0.8
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1
0.95
+0.2
■ Features
●
1.9±0.2
2.9 –0.05
For digital circuits
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
C
B
R2
E
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Note) The part numbers in the parenthesis show conventional part number.
1
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter
cutoff
current
Conditions
min
typ
Unit
ICBO
VCB = –50V, IE = 0
– 0.1
µA
ICEO
VCE = –50V, IB = 0
– 0.5
µA
UNR2111
– 0.5
UNR2112/2114/211E/211D/211M/211N/211T
– 0.2
UNR2113
– 0.1
UNR2115/2116/2117/2110
– 0.01
UNR211F/211H
IEBO
VEB = –6V, IC = 0
–1.0
UNR2119
mA
–1.5
UNR2118/211L/211V
–2.0
UNR211Z
– 0.4
Collector to base voltage
VCBO
IC = –10mA, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Forward
current
transfer
ratio
UNR2111
35
UNR2112/211E
60
UNR2113/2114/211M
80
UNR2115*/2116*/2117*/2110*
160
UNR2119/211F/211D/211H hFE
VCE = –10V, IC = –5mA
30
20
UNR211N/211T
80
400
UNR211V
6
20
UNR211Z
60
UNR211V
Output voltage high level
VCE(sat)
VOH
Output voltage low level
UNR2113
UNR211D
VOL
UNR211E
Transition frequency
Input
resistance
460
UNR2118/211L
Collector to emitter saturation voltage
fT
200
IC = –10mA, IB = – 0.3mA
– 0.25
IC = –10mA, IB = –1.5mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
– 0.07
VCC = –5V, VB = –2.5V, RL = 1kΩ
– 0.2
– 0.2
VCC = –5V, VB = –10V, RL = 1kΩ
– 0.2
VCC = –5V, VB = –6V, RL = 1kΩ
– 0.2
VCB = –10V, IE = 1mA, f = 200MHz
80
10
UNR2112/2117/211T
22
UNR2113/2110/211D/211E
47
R1
(–30%)
UNR2118
4.7
0.51
1
UNR211H/211M/211V
2.2
* hFE rank classification (UNR2115/2116/2117/2110)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
V
V
V
UNR2111/2114/2115
UNR2116/211F/211L/211N/211Z
– 0.25
–4.9
VCC = –5V, VB = –3.5V, RL = 1kΩ
UNR2119
2
max
V
MHz
(+30%)
kΩ
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
■ Electrical Characteristics (continued)
Parameter
Symbol
(Ta=25˚C)
Conditions
min
max
UNR2111/2112/2113/211L
0.8
1.0
1.2
UNR2114
0.17
0.21
0.25
UNR2118/2119
0.08
0.1
0.12
UNR211D
Resistance
ratio
typ
4.7
UNR211E
UNR211F/211T
UNR211H
Unit
2.14
R1/R2
0.47
0.17
0.22
UNR211M
0.047
UNR211N
0.1
UNR211V
1.0
UNR211Z
0.21
0.27
3
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UNR2111
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–120
–0.8mA
–0.7mA
–100
–0.6mA
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
–0.3
–25˚C
–0.03
–0.01
–0.1 –0.3
–10
–10000
–30
–25˚C
80
40
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
25˚C
120
IO — VIN
f=1MHz
IE=0
Ta=25˚C
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
4
–1
Ta=75˚C
VCE= –10V
Collector current IC (mA)
Cob — VCB
5
Ta=75˚C
25˚C
–0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
160
Forward current transfer ratio hFE
–160
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UNR2112
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–140
–120
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
–0.3
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–10
–30
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
IO — VIN
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
VCE= –10V
Collector current IC (mA)
Cob — VCB
5
Ta=75˚C
25˚C
–0.1
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Collector to emitter saturation voltage VCE(sat) (V)
–160
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
–1
–3
–10
–30
–100
Output current IO (mA)
Input voltage VIN (V)
VCB (V)
Characteristics charts of UNR2113
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
Ta=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–120
–0.5mA
–100
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
400
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
VCE= –10V
Forward current transfer ratio hFE
IB=–1.0mA
–140
Collector to emitter saturation voltage VCE(sat) (V)
–160
Ta=75˚C
300
25˚C
200
–25˚C
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
5
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
IO — VIN
4
3
2
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
VIN — IO
–10000
Output current IO (µA)
Collector output capacitance Cob (pF)
6
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR2114
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–140
IB=–1.0mA
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–0.2mA
–40
–0.1mA
–20
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–1
–3
–10
–10000
–30
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
VO=–5V
Ta=25˚C
–1000
–3000
–300
–1000
–100
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
4
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–30
–10
–3
–1
1
–0.3
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
6
Ta=75˚C
200
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
300
Collector current IC (mA)
Cob — VCB
6
VCE= –10V
–25˚C
–0.01
–0.1 –0.3
–12
hFE — IC
400
Forward current transfer ratio hFE
–160
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.1
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UNR2115
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
Collector current IC (mA)
–140
–120
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–0.4mA
–80
–0.3mA
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–160
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR2116
IC — VCE
VCE(sat) — IC
IB=–1.0mA
Collector current IC (mA)
–140
Ta=25˚C
–0.9mA
–0.8mA
–120
–0.7mA
–0.6mA
–100
–0.5mA
–80
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
400
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
–160
–100
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
7
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
IO — VIN
–10000
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–0.4
–100
Collector to base voltage VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR2117
IC — VCE
VCE(sat) — IC
–100
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Collector current IC (mA)
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
Ta=75˚C
–1
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–10
200
Ta=75˚C
25˚C
100
–25˚C
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
–30
300
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
–10000
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
8
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–120
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UNR2118
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–160
–0.8mA
–0.7mA
–120
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
Cob — VCB
–30
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–100
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
160
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR2119
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–160
–120
–80
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
160
IC/IB=10
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
9
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Collector output capacitance Cob (pF)
IO — VIN
–10000
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–0.4
–100
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
Collector to base voltage VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR2110
IC — VCE
VCE(sat) — IC
–100
–60
–0.2mA
–40
–0.1mA
–20
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–12
Collector to emitter voltage VCE (V)
–10
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100
–3
4
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
5
–30
300
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–3
–10000
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
10
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
400
Forward current transfer ratio hFE
Ta=25˚C
IB=–1.0mA
–0.9mA
–100
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
–120
–30
–100
VCB (V)
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UNR211D
IC — VCE
VCE(sat) — IC
–100
Ta=25˚C
Collector current IC (mA)
–50
–40
–0.3mA
–30
–0.2mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–20
–0.1mA
–10
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
0
–12
Collector to emitter voltage VCE (V)
–1
–30
25˚C
–25˚C
80
40
0
–1
–100
Ta=75˚C
120
–3
3
2
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
4
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
–10000
f=1MHz
IE=0
Ta=25˚C
5
–3
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
IB=–1.0mA
–0.9mA
–0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
–60
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–1.5
–100
VCB (V)
–0.03
–2.0
–2.5
–3.0
–3.5
–4.0
–0.01
–0.1 –0.3
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR211E
IC — VCE
VCE(sat) — IC
–100
Ta=25˚C
Collector current IC (mA)
–50
–40
–0.3mA
–30
–0.6mA
–0.5mA
–0.4mA
–20
–0.2mA
–0.1mA
–10
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
400
IC/IB=10
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
Collector current IC (mA)
VCE=–10V
Forward current transfer ratio hFE
IB=–1.0mA
–0.9mA
–0.8mA –0.7mA
Collector to emitter saturation voltage VCE(sat) (V)
–60
–100
300
200
Ta=75˚C
100
0
–1
25˚C
–25˚C
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
11
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
5
4
3
2
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Collector output capacitance Cob (pF)
IO — VIN
–10000
6
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–3
0
–0.1 –0.3
–1
–3
–10
–30
–1
–1.5
–100
–0.03
–2.0
–2.5
–3.0
–3.5
–4.0
–0.01
–0.1 –0.3
Input voltage VIN (V)
Collector to base voltage VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR211F
IC — VCE
VCE(sat) — IC
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
Collector current IC (mA)
–200
–160
–120
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
Collector to emitter voltage VCE (V)
–10
–10000
–30
Ta=75˚C
25˚C
80
–25˚C
40
0
–1
–100
–3
3
2
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
4
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
1
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
12
–3
120
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
–1
VCE= –10V
Collector current IC (mA)
Cob — VCB
6
hFE — IC
160
Forward current transfer ratio hFE
–240
–30
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UNR211H
IC — VCE
VCE(sat) — IC
–120
–80
IB=–0.5mA
–0.4mA
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
IC/IB=10
–10
–1
Ta=75˚C
25˚C
–0.1
–25˚C
–0.01
–1
–12
Collector to emitter voltage VCE (V)
–3
–30
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
–0.1 –0.3
–100 –300 –1000
–1
–3
–10
–30
–100
Collector current IC (mA)
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
Input voltage VIN (V)
5
–10
VCE=–10V
Collector current IC (mA)
Cob — VCB
6
240
Forward current transfer ratio hFE
Collector current IC (mA)
–100
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
Collector output capacitance Cob (pF)
hFE — IC
–100
4
3
2
VO=–0.2V
Ta=25˚C
–10
–1
–0.1
1
0
–1
–3
–10
–30
Collector to base voltage
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
VCB (V)
Characteristics charts of UNR211L
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
–160
IB=–1.0mA
–120
–0.8mA
–0.6mA
–80
–0.4mA
–40
–0.2mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
–30
–10
–3
–1
Ta=75˚C
25˚C
–0.3
–25˚C
–0.1
–0.03
–0.01
–1
240
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
200
160
120
Ta=75˚C
80
25˚C
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
13
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — VCB
Collector output capacitance Cob (pF)
6
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
Input voltage VIN (V)
5
4
3
2
VO= –0.2V
Ta=25˚C
–10
–1
–0.1
1
0
–1
–3
–10
–30
Collector to base voltage
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
VCB (V)
Characteristics charts of UNR211M
IC — VCE
VCE(sat) — IC
–10
Collector current IC (mA)
200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
160
120
–0.5mA
80
–0.4mA
–0.3mA
40
–0.2mA
–0.1mA
0
–2
–4
–6
–8
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–0.03
–25˚C
–0.01
–0.003
–0.001
–1
0
–12
–3
Cob — VCB
–30
400
300
Ta=75˚C
200
25˚C
–25˚C
100
0
–1
–100 –300 –1000
–3
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
IO — VIN
10–4
10
VO=–0.2V
Ta=25˚C
–30
8
6
4
10–3
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
–10
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
10–2
10–1
–10
–3
–1
–0.3
–0.1
2
–0.03
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
14
500
IC/IB=10
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
hFE — IC
–30
–100
VCB (V)
1
–0.4
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UNR211N
IC — VCE
VCE(sat) — IC
–10
–150
IB=–1.0mA
–125
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–75
–0.4mA
–0.3mA
–50
–0.2mA
–25
–0.1mA
0
0
–2
–4
–6
–8
–12
–1
Ta=75˚C
–0.1
25˚C
–25˚C
–0.01
–1
–10
–100
Collector current IC (mA)
Cob — VCB
IO — VIN
f=1MHz
IE=0
Ta=25˚C
–10000
Output current IO (µA)
5
4
3
2
VCE= –10V
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
–1
–1000
Collector to emitter voltage VCE (V)
6
Collector output capacitance Cob (pF)
–10
IC/IB=10
–10
–100
–1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–1000
Input voltage VIN (V)
Collector current IC (mA)
–175
hFE — IC
300
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–200
–100
–10
VO=–0.2V
Ta=25˚C
–10
–1
–0.1
1
0
–1
–10
–1
–0.4
–100
Collector to base voltage
VCB (V)
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1
–1.4
Input voltage VIN (V)
–1
–10
–100
Output current IO (mA)
Characteristics charts of UNR211T
IC — VCE
VCE(sat) — IC
–200
Collector current IC (mA)
–175
–150
IB=–1.0mA
–125
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–100
–0.5mA
–75
–0.4mA
–50
–0.3mA
–0.2mA
–25
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
IC/IB=10
–1
Ta=75˚C
–0.1
25˚C
–25˚C
–0.01
–1
300
–10
VCE=–10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–10
–100
Collector current IC (mA)
–1000
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
–1
–10
–100
–1000
Collector current IC (mA)
15
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
IO — VIN
VIN — IO
–100
VO=–5V
Ta=25˚C
–1000
Input voltage VIN (V)
Output current IO (µA)
–10000
–100
–10
–1
–0.4
–0.6
–0.8
–1
–1.2
–10
–1
–0.1
–0.01
–0.1
–1.4
VO= –0.2V
Ta=25˚C
Input voltage VIN (V)
–1
–10
–100
Output current IO (mA)
Characteristics charts of UNR211V
IC — VCE
VCE(sat) — IC
–10
IB=–1.0mA
Collector current IC (mA)
–10
–0.9mA
–0.8mA
–8
–0.7mA
–0.6mA
–6
–0.5mA
–4
–0.4mA
–0.3mA
–2
–0.2mA
–0.1mA
0
0
–2
–4
–6
–8
–10
–1
Ta=75˚C
25˚C
–0.1
–25˚C
–0.01
–1
–12
IO — VIN
Input voltage VIN (V)
Output current IO (µA)
–100
–10
–0.8
–1
–1.2
Input voltage VIN (V)
16
–100
VO=–5V
Ta=25˚C
–0.6
–100
–1000
–1.4
VO= –0.2V
Ta=25˚C
–10
–1
–0.1
–0.01
–0.1
–1
VCE=–10V
–10
Output current IO (mA)
Ta=75˚C
10
25˚C
8
6
–25˚C
4
2
0
–1
–10
Collector current IC (mA)
VIN — IO
–1000
–1
–0.4
–10
Collector current IC (mA)
Collector to emitter voltage VCE (V)
–10000
IC/IB=10
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–12
hFE — IC
12
–100
–100
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UNR211Z
IC — VCE
VCE(sat) — IC
–10
Collector current IC (mA)
–175
–150
IB=–1.0mA
–125
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–100
–75
–0.4mA
–50
–0.3mA
–0.2mA
–25
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–1
Ta=75˚C
–0.1
25˚C
–25˚C
–0.01
–1
–10
Cob — VCB
–10000
4
3
2
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
–1
–1000
–10
–100
–1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–1000
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
–100
250
IO — VIN
f=1MHz
IE=0
Ta=25˚C
5
VCE= –10V
Collector current IC (mA)
Collector to emitter voltage VCE (V)
6
hFE — IC
300
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–200
–100
–10
VO=–0.2V
Ta=25˚C
–10
–1
–0.1
1
0
–1
–10
Collector to base voltage
–100
VCB (V)
–1
–0.4
–0.6
–0.8
–1
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1
–1
–10
–100
Output current IO (mA)
17
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2001 MAR