PD - 91861A
IRFL024N
HEXFET® Power MOSFET
l
l
l
l
l
l
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.075Ω
G
ID = 2.8A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
4.0
2.8
2.3
11.2
2.1
1.0
8.3
± 20
214
2.8
0.1
5.0
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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IRFL024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
2.0
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.056
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.1
13.4
22.2
17.7
400
145
60
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.075 Ω
VGS = 10V, ID = 2.8A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 1.68A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
18.3
ID = 1.68A
3.0
nC
VDS = 44V
7.7
VGS = 10V, See Fig. 6 and 9
–––
VDD = 28V
–––
ID = 1.68A
ns
–––
RG = 24Ω
–––
RD = 17Ω, See Fig. 10
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 2.8
showing the
A
integral reverse
––– ––– 11.2
p-n junction diode.
––– ––– 1.0
V
TJ = 25°C, IS =1.68A, VGS = 0V
––– 35
53
ns
TJ = 25°C, IF = 1.68A
––– 50
75
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 54.7 mH
ISD ≤ 1.68A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 2.8A. (See Figure 12)
2
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IRFL024N
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
4.5V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
4.5V
1
100
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
10
TJ = 150 ° C
TJ = 25 ° C
V DS = 25V
20µs PULSE WIDTH
5.5
6.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics,
100
5.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
VDS , Drain-to-Source Voltage (V)
1
4.5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
6.5
I D = 2.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFL024N
C, Capacitance (pF)
600
Ciss
500
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
400
300
200
Crss
100
ID = 1.68 A
VDS = 44V
VDS = 27V
VGS , Gate-to-Source Voltage (V)
700
15
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
5
10
15
20
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
1
10
100us
1ms
1
10ms
TJ = 150 ° C
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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1.2
TC = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFL024N
10V
VGS
QGS
RD
VDS
QG
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC)
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRFL024N
1 5V
D R IV E R
L
VD S
D .U .T
RG
+
- VD D
IA S
10V
A
0.0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
500
TOP
400
BOTTOM
ID
1.3A
2.2A
2.8A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V (B R )D SS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
6
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IRFL024N
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
E X A M P L E : T H IS IS A N IR FL 0 14
P A R T NU M B E R
IN TE RN A TIO NA L
RE CT IF IE R
LO G O
F L0 14
31 4
TOP
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W A FER
LO T CO D E
XXXXXX
D A TE CO D E (Y W W )
Y = LA S T D IG IT O F TH E Y E A R
W W = W E EK
B O TT O M
7
IRFL024N
Tape & Reel Information
SOT-223 Outline
2 .0 5 (.0 8 0 )
1 .9 5 (.0 7 7 )
TR
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 4 )
0 .3 5 (.0 1 3 )
0 .2 5 (.0 1 0 )
1 .8 5 (.0 7 2 )
1 .6 5 (.0 6 5 )
7 .5 5 (.2 9 7)
7 .4 5 (.2 9 4)
1 6 .3 0 (.6 4 1 )
1 5 .7 0 (.6 1 9 )
7 .6 0 (.2 9 9 )
7 .4 0 (.2 9 2 )
1 .6 0 (.0 6 2 )
1 .5 0 (.0 5 9 )
TYP .
F E E D D IR E C T IO N
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )
2 .3 0 (.0 9 0 )
2 .1 0 (.0 8 3 )
7 .1 0 (.2 7 9 )
6 .9 0 (.2 7 2 )
NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S .
1 3 .2 0 (.5 1 9 )
1 2 .8 0 (.5 0 4 )
1 5 .40 (.6 0 7)
1 1 .90 (.4 6 9)
4
330.00
(13.000)
M AX.
N O TE S :
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R ..
3 . D IM E N S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
5 0.00 (1 .9 6 9 )
M IN .
1 4 .4 0 (.5 6 6 )
1 2 .4 0 (.4 8 8 )
3
1 8 .4 0 (.72 4 )
M AX .
4
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Data and specifications subject to change without notice. 6/99
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