ETC IRFZ34NS

PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
l
l
l
l
l
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Advanced Process Technology
Surface Mount (IRFZ34NS)
Low-profile through-hole (IRFZ34NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.040Ω
G
ID = 29A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for lowprofile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
29
20
100
3.8
68
0.45
± 20
130
16
5.6
5.0
-55 to + 175
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
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Typ.
Max.
Units
––––
––––
2.2
40
°C/W
8/25/97
IRFZ34NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
RDS(ON)
VGS(th)
Gate Threshold Voltage
Forward Transconductance
gfs
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
6.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
49
31
40
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA…
0.040
Ω
VGS = 10V, ID = 16A„
4.0
V
VDS = VGS, I D = 250µA
–––
S
V DS = 25V, I D = 16A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
34
ID = 16A
6.8
nC
VDS = 44V
14
VGS = 10V, See Fig. 6 and 13 „…
–––
VDD = 28V
–––
ID = 16A
ns
–––
RG = 18Ω
–––
RD = 1.8Ω, See Fig. 10 „…
Between lead,
nH
7.5 –––
and center of die contact
700 –––
VGS = 0V
240 –––
pF
VDS = 25V
100 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 29
showing the
A
G
integral reverse
––– ––– 100
p-n junction diode.
S
––– ––– 1.6
V
TJ = 25°C, IS = 16A, VGS = 0V „
––– 57
86
ns
TJ = 25°C, IF = 16A
––– 130 200
nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
ƒ ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRFZ34N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRFZ34NS/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
TOP
100
10
4 .5V
100
10
4 .5V
2 0µ s PU LSE W ID TH
T
TCJ == 25°C
2 5°C
1
0.1
1
A
10
20 µs PU L SE W ID TH
TTCJ = 175°C
175 °C
1
100
0.1
V D S , D rain-to-S ource V oltage (V )
2.4
R D S (o n) , D ra in -to -S o u rc e O n R e s ista n ce
(N o rm a lize d )
I D , D r ain- to-S ourc e C u rre nt (A )
TJ = 2 5 °C
TJ = 1 7 5 ° C
10
V DS = 2 5V
2 0 µ s P U LS E W ID T H
5
6
7
8
9
A
100
Fig 2. Typical Output Characteristics
100
4
10
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
1
1
10
V G S , G ate-t o-S ou rce V olt age (V )
Fig 3. Typical Transfer Characteristics
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A
I D = 2 6A
2.0
1.6
1.2
0.8
0.4
V G S = 1 0V
0.0
-60 -40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFZ34NS/L
V GS
C iss
C rss
C is s C oss
C , C a p a c ita n c e (p F )
1000
=
=
=
=
20
0V,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
1200
I D = 1 6A
V DS = 4 4V
V DS = 2 8V
16
800
C o ss
12
600
400
C rs s
200
0
10
4
FO R TES T C IR CU IT
SEE FIG U R E 13
0
A
1
8
100
0
V D S , Drain-to-Source V oltage (V)
20
30
A
40
Q G , Total Gate Charge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
10
100
TJ = 175 °C
TJ = 25 °C
10
100
10µ s
100µ s
10
1m s
VG S = 0 V
1
0.4
0.8
1.2
1.6
A
2.0
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
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T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
10m s
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFZ34NS/L
RD
VDS
VGS
30
D.U.T.
RG
+
- V DD
25
I D , Drain Current (A)
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
15
VDS
10
90%
5
0
25
50
75
100
125
T C , Case Temperature
150
10%
VGS
175
( ° C)
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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0.1
IRFZ34NS/L
L
VDS
D.U.T.
RG
+
-
VDD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
250
TO P
B OT TO M
200
ID
6.5A
11A
16 A
150
100
50
VD D = 2 5V
0
25
50
A
75
100
125
150
175
Starting T J , Junction Temperature (°C)
tp
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
12V
.2µF
.3µF
QG
10 V
D.U.T.
QGS
+
V
- DS
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
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ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFZ34NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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ISD
*
IRFZ34NS/L
D2Pak Package Outline
10.54 ( .415)
10.29 ( .405)
1.40 (.055)
MAX.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
RE F .
-B -
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 ( .200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
RE F.
1.39 (.055)
1.14 (.045)
B A M
MINIMUM RECO MM ENDED F OO TP RINT
11.43 (.450)
NO TE S:
1 DIM ENS IO NS AF T ER S OLDE R DIP .
2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982.
3 CO NT RO LLING DIME NSIO N : INCH.
4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.
LE AD ASS IG NM ENT S
1 - G AT E
2 - DRA IN
3 - S OU RC E
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
Part Marking Information
D2Pak
IN TER NATION AL
REC TIFIER
L OGO
A
PART NU MBER
F53 0S
9246
9B
1M
AS SEMBLY
LOT CODE
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DATE CODE
(YYW W )
YY = YEAR
W W = W EE K
2.54 (.100)
2X
IRFZ34NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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IRFZ34NS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
TR L
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
1. 75 (.0 69 )
1. 25 (.0 49 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE E D D IR E C TIO N
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
N O T ES :
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.
6 0.0 0 (2 .36 2)
M IN .
26 .40 (1. 03 9)
24 .40 (.9 61 )
3
3 0.4 0 (1 .19 7)
MA X .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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