IRF IRFL014NPBF

PD- 95352
IRFL014NPbF
l
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Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.16Ω
G
ID = 1.9A
S
Description
Fifth Generation HEXFET® MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Units
2.7
1.9
1.5
15
2.1
1.0
8.3
± 20
48
1.7
0.1
5.0
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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IRFL014NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
∆V(BR)DSS/∆TJ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
55
–––
–––
2.0
1.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.054
–––
–––
–––
–––
–––
–––
–––
7.0
1.2
3.3
6.6
7.1
12
3.3
190
72
33
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.16
Ω
VGS = 10V, ID = 1.9A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 0.85A
1.0
VDS = 44V, VGS = 0V
µA
25
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
11
ID = 1.7A
1.8
nC
VDS = 44V
5.0
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 28V
–––
ID = 1.7A
ns
–––
RG = 6.0Ω
–––
RD = 16Ω, See Fig. 10 „
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
1.3
–––
–––
15
–––
–––
–––
–––
41
64
1.0
61
95
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
TJ = 25°C, I F = 1.7A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 8.2mH
ƒ ISD ≤ 1.7A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 3.4A. (See Figure 12)
2
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IRFL014NPbF
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
10
1
4.5V
20µs PULSE WIDTH
TC = 25°C
0.1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
1
10
A
10
4.5V
1
20µs PULSE WIDTH
TJ = 150°C
0.1
0.1
100
1
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
10
TJ = 150°C
TJ = 25°C
1
V DS = 25V
20µs PULSE WIDTH
4
5
6
7
8
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
0.1
10
9
A
I D = 1.7A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFL014NPbF
350
250
Ciss
200
Coss
V GS , Gate-to-Source Voltage (V)
300
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS = 44V
V DS = 28V
V DS = 11V
16
12
150
Crss
100
I D = 1.7A
50
0
A
1
10
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
100
0
VDS , Drain-to-Source Voltage (V)
6
8
A
10
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
4
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150°C
TJ = 25°C
1
10
100µs
1ms
1
10ms
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
A
1.4
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFL014NPbF
10V
QGS
RD
V DS
QG
VGS
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
t
0.01
1
Notes:
1. Duty factor D = t
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJA + T A
0.01
0.1
1
10
100
A
1000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
IRFL014NPbF
120
TOP
100
BOTTOM
ID
1.5A
2.7A
3.4A
80
60
40
20
0
VDD = 25V
25
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
6
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IRFL014NPbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
T HIS IS AN IRFL014
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
FL014
314P
T OP
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LOT CODE
AXXXX
A = AS S EMBLY S ITE
DAT E CODE
CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
BOT T OM
7
IRFL014NPbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
14.40 (.566)
12.40 (.488)
18.40 (.724)
MAX.
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
8
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