ISSI ® IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM JANUARY 2000 FEATURES DESCRIPTION • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 3.3V power supply The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS double-metal technology. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 10 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62LV256 is pin compatible with other 32K x 8 SRAMs in 300-mil plastic DIP and SOJ, 330-mil plastic SOP, and TSOP (Type I) packages. FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 256 X 1024 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O VCC GND I/O0-I/O7 CE OE CONTROL CIRCUIT WE ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. I 01/26/00 1 ISSI IS62LV256 PIN CONFIGURATION PIN CONFIGURATION 28-Pin DIP, SOJ and SOP 28-Pin TSOP (Type I) A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 PIN DESCRIPTIONS 21 20 19 18 17 16 15 14 13 12 11 10 9 8 22 23 24 25 26 27 28 1 2 3 4 5 6 7 ® A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 TRUTH TABLE A0-A14 Address Inputs Mode CE Chip Enable Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Input/Output Not Selected (Power-down) Output Disabled Read Write Vcc Power GND Ground WE CE OE I/O Operation Vcc Current X H X High-Z ISB1, ISB2 H H L L L L H L X High-Z DOUT DIN ICC1, ICC2 ICC1, ICC2 ICC1, ICC2 ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +4.6 –55 to +125 –65 to +150 0.5 20 Unit V °C °C W mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. I 01/26/00 ISSI IS62LV256 ® OPERATING RANGE Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VCC 3.3V ± 5% 3.3V ± 5% DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage VCC = Min., IOH = –1.0 mA 2.4 — V VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA — 0.4 V VIH Input HIGH Voltage 2.2 VCC + 0.3 V VIL Input LOW Voltage(1) –0.3 0.8 V ILI Input Leakage GND ≤ VIN ≤ VCC Com. Ind. –2 –5 2 5 µA ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled Com. Ind. –2 –5 2 5 µA Notes: 1. VIL = –3.0V for pulse width less than 10 ns. 2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -45 ns Min. Max. -70 ns Min. Max. Symbol Parameter Test Conditions Unit ICC1 Vcc Operating Supply Current VCC = Max., CE = VIL IOUT = 0 mA, f = 0 Com. Ind. — — 20 30 — — 20 30 mA ICC2 Vcc Dynamic Operating Supply Current VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX Com. Ind. — — 35 45 — — 30 40 mA ISB1 TTL Standby Current (TTL Inputs) VCC = Max., VIN = VIH or VIL CE ≥ VIH, f = 0 Com. Ind. — — 2 5 — — 2 5 mA ISB2 CMOS Standby Current (CMOS Inputs) VCC = Max., CE ≥ VCC – 0.2V, VIN ≥ VCC – 0.2V, or VIN ≤ 0.2V, f = 0 Com. Ind. — — 90 200 — — 90 200 µA Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. I 01/26/00 3 ISSI IS62LV256 ® CAPACITANCE(1,2) Symbol Parameter CIN Input Capacitance COUT Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 5 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc =3.3V. READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) -45 ns Symbol Parameter -70 ns Min. Max. Min. Max. Unit tRC Read Cycle Time 45 — 70 — ns tAA Address Access Time — 45 — 70 ns tOHA Output Hold Time 2 — 2 — ns tACE CE Access Time — 45 — 70 ns OE Access Time — 25 — 35 ns tLZOE OE to Low-Z Output 0 — 0 — ns tHZOE(2) OE to High-Z Output 0 20 0 25 ns tLZCE(2) CE to Low-Z Output 3 — 3 — ns tHZCE CE to High-Z Output 0 20 0 25 ns tPU CE to Power-Up 0 — 0 — ns tPD(3) CE to Power-Down — 30 — 50 ns tDOE (2) (3) (2) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested. 4 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. I 01/26/00 ISSI IS62LV256 ® AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Levels Output Load Unit 0V to 3.0V 5 ns 1.5V See Figures 1a and 1b AC TEST LOADS 1213 Ω 1213 Ω 3.3V 3.3V OUTPUT OUTPUT 100 pF Including jig and scope 1378 Ω 5 pF Including jig and scope Figure 1a. 1378 Ω Figure 1b. AC WAVEFORMS READ CYCLE NO. 1(1,2) tRC ADDRESS tAA tOHA DOUT Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. I 01/26/00 tOHA DATA VALID 5 ISSI IS62LV256 ® READ CYCLE NO. 2(1,3) tRC ADDRESS tAA tOHA OE tHZOE tDOE tLZOE CE tACE tLZCE tHZCE HIGH-Z DOUT HIGH-Z DATA VALID tPU tPD ICC 50% SUPPLY CURRENT 50% ISB Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. WRITE CYCLE SWITCHING CHARACTERISTICS(1,2,3) (Over Operating Range) Symbol Parameter -45 ns Min. Max. -70 ns Min. Max. Unit tWC Write Cycle Time 45 — 70 — ns tSCE CE to Write End 35 — 60 — ns tAW Address Setup Time to Write End 25 — 60 — ns tHA Address Hold from Write End 0 — 0 — ns Address Setup Time 0 — 0 — ns tPWE WE Pulse Width 25 — 55 — ns tSD Data Setup to Write End 20 — 30 — ns tHD Data Hold from Write End 0 — 0 — ns tSA (4) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH. 6 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. I 01/26/00 ISSI IS62LV256 ® AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2) tWC ADDRESS tHA tSCE CE tAW tPWE WE tSA DOUT tHZWE tLZWE HIGH-Z DATA UNDEFINED tSD DIN tHD DATA-IN VALID WRITE CYCLE NO. 2 (CE Controlled)(1,2) tWC ADDRESS tSA tHA tSCE CE tAW tPWE WE tHZWE DOUT DATA UNDEFINED tLZWE HIGH-Z tSD DIN tHD DATA-IN VALID Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE • VIH. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. I 01/26/00 7 ISSI IS62LV256 ® ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. Package 45 45 45 45 IS62LV256-45N IS62LV256-45J IS62LV256-45T IS62LV256-45U 300-MIL PLASTIC DIP 300-MIL PLASTIC SOJ TSOP (TYPE I) 330-MIL SOP 70 70 70 70 IS62LV256-70N IS62LV256-70J IS62LV256-70T IS62LV256-70U 300-MIL PLASTIC DIP 300-MIL PLASTIC SOJ TSOP (TYPE I) 330-MIL SOP Industrial Range: –40°C to +85°C Speed (ns) Order Part No. Package 45 45 45 IS62LV256-45JI IS62LV256-45TI IS62LV256-45UI 300-mil Plastic SOJ TSOP (Type I) 330-mil SOP 70 70 70 IS62LV256-70JI IS62LV256-70TI IS62LV256-70UI 300-mil Plastic SOJ TSOP (Type I) 330-mil SOP ISSI ® Integrated Silicon Solution, Inc. 2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: [email protected] www.issi.com 8 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. I 01/26/00