ETC BAV74LT1/D

ON Semiconductor
Monolithic Dual
Switching Diode
BAV74LT1
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
50
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Peak Forward Surge Current
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
–55 to +150
°C
Board(1)
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
ANODE
1
3
CATHODE
2
ANODE
DEVICE MARKING
BAV74LT1 = JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V(BR)
50
—
Vdc
—
—
100
0.1
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 5.0 µAdc)
µAdc
Reverse Voltage Leakage Current
(VR = 50 Vdc, TJ = 125°C)
(VR = 50 Vdc)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
—
2.0
pF
Forward Voltage
(IF = 100 mAdc)
VF
—
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 Ω)
trr
—
4.0
ns
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
1
Publication Order Number:
BAV74LT1/D
BAV74LT1
Curves Applicable to Each Anode
10
IR , REVERSE CURRENT (µA)
TA = 85°C
10
TA = -40°C
1.0
0.1
TA = 25°C
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 150°C
TA = 25°C
10
0
Figure 1. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Leakage Current
1.0
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
0.9
0.8
0.7
0.6
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
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8
50
BAV74LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from the
device junction to ambient, and the operating temperature,
TA. Using the values provided on the data sheet for the
SOT–23 package, PD can be calculated as follows:
PD =
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT–23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
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BAV74LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236AB)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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BAV74LT1/D