ETC D44VH/D

ON Semiconductor
NPN
D44VH
Complementary Silicon Power
Transistors
PNP
D45VH
These complementary silicon power transistors are designed for
high–speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well–suited for drivers
for high power switching circuits.
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
83 WATTS
• Fast Switching —
tf = 90 ns (Max)
• Key Parameters Specified @ 100C
• Low Collector–Emitter Saturation Voltage —
•
VCE(sat) = 1.0 V (Max) @ 8.0 A
Complementary Pairs Simplify Circuit Designs
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MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
80
Vdc
Collector–Emitter Voltage
VCEV
100
Vdc
Emitter Base Voltage
VEB
7.0
Vdc
IC
15
20
Adc
PD
83
0.67
Watts
W/C
TJ, Tstg
–55 to 150
C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.5
C/W
Thermal Resistance, Junction to Ambient
RθJA
62.5
C/W
TL
275
C
Collector Current — Continuous
— Peak (1)
Total Power Dissipation @ TC = 25C
Derate above 25C
Operating and Storage Junction
Temperature Range
ICM
CASE 221A–09
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
(2) Pulse Width 6.0 ms, Duty Cycle 50%.
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
D44VH/D
D44VH D45VH
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
80
—
—
Vdc
—
—
—
—
10
100
—
—
10
35
20
—
—
—
—
—
—
—
—
—
—
—
—
0.4
1.0
0.8
1.5
—
—
—
—
—
—
—
—
1.2
1.0
1.1
1.5
—
50
—
—
—
120
275
—
—
td
—
—
50
tr
—
—
250
ts
—
—
700
tf
—
—
90
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (2)
(IC = 25 mAdc, IB = 0)
Collector–Emitter Cutoff Current
(VCE = Rated VCEV, VBE(off) = 4.0 Vdc)
(VCE = Rated VCEV, VBE(off) = 4.0 Vdc, TC = 100C)
ICEV
Emitter Base Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
IEBO
µAdc
µAdc
ON CHARACTERISTICS (2)
hFE
DC Current Gain
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 4.0 Adc, VCE = 1.0 Vdc)
—
VCE(sat)
Collector–Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
(IC = 8.0 Adc, IB = 0.8 Adc)
(IC = 15 Adc, IB = 3.0 Adc, TC = 100C)
D44VH10
D45VH10
D44VH10
D45VH10
Vdc
VBE(sat)
Base–Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
(IC = 8.0 Adc, IB = 0.8 Adc)
(IC = 8.0 Adc, IB = 0.4 Adc, TC = 100C)
(IC = 8.0 Adc, IB = 0.8 Adc, TC = 100C)
D44VH10
D45VH10
D44VH10
D45VH10
Vdc
DYNAMIC CHARACTERISTICS
fT
Current Gain Bandwidth Product
(IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz)
Cob
Output Capacitance
(VCB = 10 Vdc, IC = 0, ftest = 1.0 MHz)
D44VH10
D45VH10
MHz
pF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
(VCC = 20 Vdc, IC = 8.0 Adc,
IB1 = IB2 = 0.8 Adc)
Fall Time
(2) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
http://onsemi.com
2
ns
D44VH D45VH
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
http://onsemi.com
3
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
D44VH D45VH
ON Semiconductor and
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4
D44VH/D