ON Semiconductor BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD179 is complementary with BD180 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 3.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 30 240 Watts mw/C TJ, Tstg –65 to +150 C Symbol Max Unit θJC 4.16 C/W Collector Current Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case CASE 77–09 TO–225AA TYPE ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 80 — Vdc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO — 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc 63 15 160 — Collector–Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE BD179–10 ALL Collector–Emitter Saturation Voltage* (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) — 0.8 Vdc Base–Emitter On Voltage* (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) — 1.3 Vdc fT 3.0 — MHz Current–Gain – Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) *Pulse Test: Pulse Width 300 As, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 1 Publication Order Number: BD179/D BD179 BD179–10 10 100 µs IC, COLLECTOR CURRENT (AMP) 7.0 5.0 3.0 2.0 1.0 ms 5.0 ms 1.0 0.7 0.5 dc TJ = 150°C SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION (BASE-EMITTER DISSIPATION IS SIGNIFICANT ABOVE IC = 2.0 AMP) PULSE DUTY CYCLE < 10% 0.3 0.2 0.1 The Safe Operating Area Curves indicate IC – VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power–temperature derating must be observed for both steady state and pulse power conditions. 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.6 TJ = 25°C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IB, BASE CURRENT (mA) 20 30 50 100 200 Figure 2. Collector Saturation Region 1.5 VCE = 2.0 V 1.2 300 200 100 70 50 TJ = + 150°C 30 20 TJ = + 55°C 10 2.0 3.0 5.0 VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1000 700 500 TJ = + 25°C 10 TJ = 25°C 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 0 2.0 3.0 5.0 VCE(sat) @ IC/IB = 10 IC, COLLECTOR CURRENT (mA) 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) Figure 3. Current Gain Figure 4. “On” Voltages 20 30 50 100 200 300 500 1000 2000 http://onsemi.com 2 10 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE BD179 BD179–10 1.0 0.7 0.5 D = 0.5 0.3 0.2 D = 0.2 0.1 0.07 0.05 D = 0.05 D = 0.1 SINGLE PULSE θJC(t) = r(t) θJC θJC = 4.16°C/W MAX θJC = 3.5°C/W TYP D = 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) θJC(t) 0.03 0.02 0.01 0.01 P(pk) 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME or PULSE WIDTH (ms) Figure 5. Thermal Response http://onsemi.com 3 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 BD179 BD179–10 PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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