ETC DB1000

DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-1000-1B
ABDB-1000-1B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
MECHANICAL SPECIFICATION
FEATURES
PRV Ratings from 50 to 1000 Volts
ACTUAL SIZE
DT
DB1004
Surge overload rating to 150 Amps peak
SERIES DB1000-DB1010 and ADB1004-ADB1008
Reliable low cost molded plastic construction
BH
AC
Ideal for printed circuit board applications
AC
UL RECOGNIZED - FILE #E124962
LL
_
MECHANICAL DATA
+
LD
Case: Molded plastic, U/L Flammability Rating 94V-0
D1
Terminals: Round silver plated copper pins
+
Soldering: Per MIL-STD 202 Method 208 guaranteed
D1
BL
Polarity: Marked on side of case; positive lead at beleveled corner
_
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.18 Ounces (5.4 Grams)
BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratingsat25°Cambienttemperature unlessotherwisespecified.
Single phase, half wave,60Hz, resistive or inductive load.
Forcapacitive loads, derate currentby20%.
RATINGS
PARAMETER (TEST CONDITIONS)
SYMBOL
CONTROLLED
AVALANCHE
ADB ADB ADB DB DB DB DB DB DB DB
1004 1006 1008 1000 1001 1002 1004 1006 1008 1010
Series Number
Maximum DC Blocking Voltage
VRM
Working Peak Reverse Voltage
VRWM
Maximum Peak Recurrent Reverse Voltage
VRRM
RMS Reverse Voltage
VR (RMS)
400
600 800
50
100
200
400
600
800 1000 VOLTS
280
420 560
35
70
140
280
420
560
Power Dissipation in V(BR) Region for 100 µS Square Wave
PRM
500
n/a
Continuous Power Dissipation in V(BR) Region
@ THS=80 oC (Heat Sink Temp)
PR
2
n/a
Thermal Energy (Rating for Fusing)
I2t
64
IFSM
150
IO
10
8
TJ, TSTG
-55 to +150
Peak Forward Surge Current (8.3 mSec single half sine wave
superimposed on rated load)
Average Forward
@ TC = 50 oC (Note 1)
Rectified Current
@ TC = 100 oC (Note 1); TA = 50 oC (Note 2)
Junction Operating and Storage Temperature Range
AMPS2
SEC
AMPS
°C
V(BR) Min
450
850
n/a
Maximum Avalanche Voltage
V(BR) Max
900 1100 1300
n/a
Maximum Forward Voltage (Per Diode) at 5 Amps DC
@ TA = 25oC
Maximum Reverse Current at Rated V RM
@TA = 100 oC
Minimum Insulation Breakdown Voltage (Circuit to Case)
Junction to Ambient
Junction to Case
NOTES: (1) Unit Mounted on Metal Chassis
(2) Unit Mounted on PC Board
700
WATTS
Minimum Avalanche Voltage
Typical Thermal Resistance (on Heat Sink)
UNITS
NON-CONTROLLED
AVALANCHE
650
VFM
1.1
IRM
5
1
VISO
2000
RθJA
RθJC
2.5
5.0
VOLTS
µA
mA
VOLTS
o
C/W
4.97fbrdb010
F35
DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-1000-2B
ABDB-1000-2B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
10 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB1000 - DB1010 and SERIES ADB1004 - ADB1008
150
Resistive and Inductive Loads
120
Case
90
Ambient
60
NOTE 1
30
0
10
1
100
Number of Cycles at 60 Hz
o
Temperature, C
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 1. FORWARD CURRENT DERATING CURVE
100
10
10
1.0
1.0
NOTE 2
0.1
TJ = 25 oC
0.1
.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
0.01
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
NOTES
(1) JEDEC Method, 8.3 mSec. Single Half Sine Wave; TJ = 125 oC
(2) TJ = 25 oC; Pulse Width = 300 µSec
F36
4.97bbrdb800