DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-1000-1B ABDB-1000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES PRV Ratings from 50 to 1000 Volts ACTUAL SIZE DT DB1004 Surge overload rating to 150 Amps peak SERIES DB1000-DB1010 and ADB1004-ADB1008 Reliable low cost molded plastic construction BH AC Ideal for printed circuit board applications AC UL RECOGNIZED - FILE #E124962 LL _ MECHANICAL DATA + LD Case: Molded plastic, U/L Flammability Rating 94V-0 D1 Terminals: Round silver plated copper pins + Soldering: Per MIL-STD 202 Method 208 guaranteed D1 BL Polarity: Marked on side of case; positive lead at beleveled corner _ Mounting Position: Any. Through hole provided for #6 screw Weight: 0.18 Ounces (5.4 Grams) BL MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratingsat25°Cambienttemperature unlessotherwisespecified. Single phase, half wave,60Hz, resistive or inductive load. Forcapacitive loads, derate currentby20%. RATINGS PARAMETER (TEST CONDITIONS) SYMBOL CONTROLLED AVALANCHE ADB ADB ADB DB DB DB DB DB DB DB 1004 1006 1008 1000 1001 1002 1004 1006 1008 1010 Series Number Maximum DC Blocking Voltage VRM Working Peak Reverse Voltage VRWM Maximum Peak Recurrent Reverse Voltage VRRM RMS Reverse Voltage VR (RMS) 400 600 800 50 100 200 400 600 800 1000 VOLTS 280 420 560 35 70 140 280 420 560 Power Dissipation in V(BR) Region for 100 µS Square Wave PRM 500 n/a Continuous Power Dissipation in V(BR) Region @ THS=80 oC (Heat Sink Temp) PR 2 n/a Thermal Energy (Rating for Fusing) I2t 64 IFSM 150 IO 10 8 TJ, TSTG -55 to +150 Peak Forward Surge Current (8.3 mSec single half sine wave superimposed on rated load) Average Forward @ TC = 50 oC (Note 1) Rectified Current @ TC = 100 oC (Note 1); TA = 50 oC (Note 2) Junction Operating and Storage Temperature Range AMPS2 SEC AMPS °C V(BR) Min 450 850 n/a Maximum Avalanche Voltage V(BR) Max 900 1100 1300 n/a Maximum Forward Voltage (Per Diode) at 5 Amps DC @ TA = 25oC Maximum Reverse Current at Rated V RM @TA = 100 oC Minimum Insulation Breakdown Voltage (Circuit to Case) Junction to Ambient Junction to Case NOTES: (1) Unit Mounted on Metal Chassis (2) Unit Mounted on PC Board 700 WATTS Minimum Avalanche Voltage Typical Thermal Resistance (on Heat Sink) UNITS NON-CONTROLLED AVALANCHE 650 VFM 1.1 IRM 5 1 VISO 2000 RθJA RθJC 2.5 5.0 VOLTS µA mA VOLTS o C/W 4.97fbrdb010 F35 DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-1000-2B ABDB-1000-2B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 10 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB1000 - DB1010 and SERIES ADB1004 - ADB1008 150 Resistive and Inductive Loads 120 Case 90 Ambient 60 NOTE 1 30 0 10 1 100 Number of Cycles at 60 Hz o Temperature, C FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT FIGURE 1. FORWARD CURRENT DERATING CURVE 100 10 10 1.0 1.0 NOTE 2 0.1 TJ = 25 oC 0.1 .01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS 0.01 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE NOTES (1) JEDEC Method, 8.3 mSec. Single Half Sine Wave; TJ = 125 oC (2) TJ = 25 oC; Pulse Width = 300 µSec F36 4.97bbrdb800