Agilent HLMP-HD51 5 mm Precision Optical Performance Red Oval LED Lamps Data Sheet Features • Well defined spatial radiation pattern • High brightness material Red AlInGaP 630 nm Benefits • Viewing angle designed for wide field of view applications • Superior performance for outdoor environments Description This Precision Optical Performance Oval LED is specifically designed for Full Color/Video and Passenger Information Signs. The Oval shaped radiation pattern and high luminous intensity ensure that this device is excellent for wide field of view outdoor applications where a wide viewing angle and readability in sunlight are essential. This lamp has very smooth, matched radiation patterns ensuring consistent color mixing in full color applications, message uniformity across the viewing angle of the sign. High efficiency LED material is used in this lamp: Aluminum Indium Gallium Phosphide (AlInGaP) for Red Color. The higher performance AlInGaP II is used. Package Dimensions 10.85 ± 0.50 (0.427 ± 0.019) 1.20 (0.047) 2.54 (0.10) 5.20 (0.204) 1.50 MAX. (0.059) 7.00 (0.275) 3.80 (0.152) 1.00 MIN. (0.039) – H + 0.50 ± 0.10 (0.019 ± 0.003) V 25.00 MIN. (0.984) Note: Dimensions in millimeters (inches). Applications • Full color signs • Commercial outdoor advertising Part Numbering System HLMP-X X X X-X X X X X Mechanical Options 00: Bulk Packaging DD: Ammo Pack Color Bin & VF Selections 0: No Color Bin Limitation T: Red Color with VF Maximum of 2.6 V Maximum Intensity Bin 0: No Iv Bin Limitation Minimum Intensity Bin Refer to Device Selection Guide Color D: 630 nm Red Package H: 5 mm 50° x 100° Oval, Parallel Absolute Maximum Ratings TA = 25°C Parameter Red DC Forward Current[1] 50 mA Peak Pulsed Forward Current 100 mA Average Forward Current 30 mA Reverse Voltage (IR = 100 µA) 5V Power Dissipation 120 mW LED Junction Temperature 110°C Operating Temperature Range –30 to +80°C Storage Temperature Range –40 to +100°C Soldering Temperature 260°C for 5 seconds Note: 1. Derate linearly as shown in Figure 4. 2 Electrical/Optical Characteristics TA = 25°C Parameter Symbol Min. Typ. Typical Viewing Angle Major Minor 2θ1/2 100 50 Forward Voltage VF 2.0 Reverse Voltage VR Peak Wavelength Max. Units Test Conditions deg V IF = 20 mA 20 V IR = 100 µA λpeak 639 nm Peak of Wavelength of Spectral Distribution at IF = 20 mA Spectral Halfwidth ∆λ 1/2 17 nm Wavelength Width at Spectral Distribution 1/2 Power Point at IF = 20 mA Capacitance C 40 pF VF = 0, F = 1 MHz Luminous Efficacy ηv 155 lm/W Emitted Luminous Power/ Emitted Radiant Power at IF = 20 mA Dominant Wavelength λd 630 5 2.4 IF = 20 mA Notes 1. 2θ 1/2 is the off-axis angle where the luminous intensity is 1/2 the on-axis intensity. 2. The radiant intensity, Ie in watts per steradian, may be found from the equation Ie = Iv/ηv where I v is the luminous intensity in candelas and ηv is the luminous efficacy in lumens/watt. 3. The luminous intensity is measured on the mechanical axis of the lamp package. 4. The optical axis is closely aligned with the package mechanical axis. 5. The dominant wavelength, λd, is derived from the CIE Chromaticity Diagram and represents the color of the lamp. 6. For option -xxTxx, maximum forward voltage, VF, is 2.6 V. Device Selection Guide Part Number Color Dominant Wavelength λd (nm) Typ. Luminous Intensity IV (mcd) at 20 mA Min. Max. Tinting Type HLMP-HD51-LP000 Red 630 345 1330 Red HLMP-HD51-MQ000 Red 630 450 1730 Red HLMP-HD51-LPT00 Red 630 345 1330 Red HLMP-HD51-MQT00 Red 630 450 1730 Red 3 RELATIVE INTENSITY 1.0 0.5 0 500 550 650 600 700 WAVELENGTH – nm Figure 1. Relative Intensity vs. Wavelength. 50 2.0 1.5 1.0 0.5 0 0 10 20 30 40 40 30 20 10 0 50 60 FORWARD CURRENT – mA IF – FORWARD CURRENT – mA RELATIVE LUMINOUS INTENSITY (NORMALIZED AT 20 mA) 2.5 0 0.5 1.0 1.5 2.0 VF – FORWARD VOLTAGE – V FORWARD CURRENT – mA Figure 2. Relative Luminous Intensity vs. Forward Current. Figure 3. Forward Current vs. Forward Voltage. RELATIVE INTENSITY 1.0 0.8 0.6 0.4 0.2 0 -90 -70 -50 -30 -10 10 30 50 ANGULAR DISPLACEMENT – DEGREES Figure 5a. Representative Spatial Radiation Pattern for Major Axis. 4 2.5 70 90 3.0 50 RθJ-A = 780°C/W 40 30 20 10 0 0 20 40 60 80 AMBIENT TEMPERATURE – °C Figure 4. Maximum Forward Current vs. Ambient Temperature. 100 RELATIVE INTENSITY 1.0 0.8 0.6 0.4 0.2 0 -90 -70 -50 -30 -10 10 30 50 70 ANGULAR DISPLACEMENT – DEGREES Figure 5b. Representative Spatial Radiation Pattern for Minor Axis. Intensity Bin Limits (mcd at 20 mA) Bin ID Min. Max. L 400 520 M 520 680 N 680 880 P 880 1150 Q 1150 1500 Tolerance for each bin limit is ± 15%. Note: 1. Bin categories are established for classification of products. Products may not be available in all bin categories. 5 90 www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. August 23, 2001 Obsoletes 5988-1855EN 5988-3947EN