ETC HLMP-HD57

Agilent HLMP-HD57
5 mm Precision Optical Performance
Red Oval LED Lamps
Data Sheet
Features
• Well defined spatial radiation
pattern
• High brightness material
• Red AlInGaP 630 nm
Benefits
• Viewing angle designed for wide
field of view applications
• Superior performance for outdoor
environments
Description
This Precision Optical Performance Oval LED is specifically
designed for Full Color/Video and
Passenger Information Signs. The
Oval shaped radiation pattern and
high luminous intensity ensure
that this device is excellent for
wide field of view outdoor applications where a wide viewing angle
and readability in sunlight are
essential. This lamp has very
smooth, matched radiation patterns ensuring consistent color
mixing in full color applications,
message uniformity across the
viewing angle of the sign. High
efficiency LED material is used in
this lamp: Aluminium Indium
Gallium Phosphide (AlInGaP) for
Red Color. The higher performance AlInGaP II is used.
Applications
• Full color signs
• Commercial outdoor advertising
Package Dimensions
NOTE: MEASURED JUST ABOVE FLANGE.
10.85 ± 0.50
(0.427 ± 0.019)
3.80
(0.150)
0.50 ± 0.10
(0.019 ± 0.003)
1.20
(0.047)
2.54
(0.10)
5.20
(0.204)
1.50 MAX.
(0.059)
7.00
(0.275)
CATHODE
LEAD
1.00 MIN.
(0.039)
25.00 MIN.
(0.984)
NOTES:
1. DIMENSIONS IN MILLIMETERS (INCHES).
2. TOLERANCE ± 0.25 mm UNLESS OTHERWISE NOTED.
Device Selection Guide
Part Number
HLMP-HD57-NR000
Color and
Dominant
Wavelength
λd (nm) Typ.
Red 630
Luminous
Intensity
Iv (mcd) at
20 mA Min.
590
Luminous
Intensity
Iv (mcd) at
20 mA Max.
2200
Notes:
1. The luminous intensity is measured on the mechanical axis of the lamp package.
2. The optical axis is closely aligned with the package mechanical axis.
3. The dominant wavelength, λd , is derived from the Chromaticity Diagram and represents the color of the lamp.
Part Numbering System
HLMP - x x xx - x x x xx
Mechanical Options
00: Bulk Packaging
DD: Ammo Pack
Color Bin Selections
0: No Color Bin Limitation
Maximum Intensity Bin
0: No Iv Bin Limitation
Minimum Intensity Bin
Refer to Device Selection Guide
Color
D: 630 nm Red
Package
H: 5 mm Oval 40º x 100º
2
Tinting
Type
Red
Absolute Maximum Ratings at T A = 25˚C
Parameter
DC Forward Current [1]
Peak Pulsed Forward Current
Average Forward Current
Power Dissipation
Reverse Voltage
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Value
50 mA
100 mA
30 mA
140 mW
5 V (I R = 100 µA)
130˚C
–40˚C to +100˚C
–40˚C to +120˚C
260˚C for 5 secs
Note:
1. Derate linearly as shown in Figure 3.
Electrical/Optical Characteristics
TA = 25˚C
Parameter
Forward Voltage
Reverse Voltage
Capacitance
Thermal Resistance
Viewing Angle
Major Axis
Minor Axis
Dominant Wavelength
Peak Wavelength
Symbol
VF
VR
C
RθJ-PIN
2θ1/2
Min.
5
Typ.
2.2
20
40
240
Max.
2.4
Units
V
pF
˚C/W
λd
λp
100
40
630
639
nm
nm
Spectral Halfwidth
∆λ 1/2
17
nm
Luminous Efficacy
ηv
155
lm/W
Test Conditions
IF = 20 mA
IR = 100 µA
VF = 0, f = 1 MHz
LED Junction-to-Cathode
Lead
deg
IF = 20 mA
Peak of Wavelength of
Spectral Distribution at
IF = 20 mA
Wavelength Width at
Spectral Distribution Power
Point at IF = 20 mA
Emitted luminous power/
Emitted radiant power
Notes:
1. 2θ 1/2 is the off-axis angle where the luminous intensity is 1/2 the on axis intensity.
2. The radiant intensity, Ie in watts per steradian, may be found from the equation Ie = Iv/ηv where Iv is the luminous intensity in
candelas and ηv is the luminous efficacy in lumens/watt.
3
RELATIVE INTENSITY
(NORMALIZED AT 20 mA)
RELATIVE INTENSITY
0.5
2.0
1.5
1.0
0.5
0
0
550
600
650
IF – FORWARD CURRENT – mA
2.5
1.0
700
0
Figure 1. Relative intensity vs. wavelength.
30
RθJA = 585° C/W
30
RθJA = 780° C/W
20
10
0
50
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE – °C
Figure 3. Forward current vs. ambient
temperature.
1.0
RELATIVE INTENSITY
40
30
20
10
0
0.5
1.0
1.5
2.0
2.5
0.5
0
-90
3.0
-70
-50
-30
VF – FORWARD VOLTAGE – V
10
30
50
70
90
Figure 5. Spatial radiation pattern-minor axis.
1.0
Intensity Bin Limits (mcd at 20 mA)
Bin Name
Min.
Max.
M
520
680
N
680
880
P
880
1150
Q
1150
1500
R
1500
1900
0.5
0
-90
-10
ANGLE – DEGREES
Figure 4. Forward current vs. forward voltage.
RELATIVE INTENSITY
40
Figure 2. Relative luminous intensity vs.
forward current.
50
IF – FORWARD CURRENT – mA
20
40
FORWARD CURRENT – mA
WAVELENGTH – nm
0
10
50
-70
-50
-30
-10
10
ANGLE – DEGREES
Figure 6. Spatial radiation pattern-major axis.
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5988-4074EN
July 3, 2002
5988-7293EN
30
50
70
90
Tolerance will be ± 15% of these limits.
Note:
1. Bin categories are established for
classification of products. Products may
not be available in all bin categories.