HITACHI HVD133

HVD133
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-947 (Z)
Rev. 0
Jun. 2000
Features
• Low capacitance.(C1 = 1.0 pF max)
• Low forward resistance. (rf = 0.7 Ω max)
• Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVD133
3
SFP
Outline
1
3
Cathode mark
Mark
2
1. Cathode
2. Anode
HVD133
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
30
V
Power dissipation
Pd
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
30
—
—
V
IR = 1 µA
Reverse current
IR
—
—
100
nA
VR = 25 V
Forward voltage
VF
—
—
0.85
V
IF = 2 mA
Capacitance
C1
—
—
1.0
pF
VR = 1 V, f = 1 MHz
C6
—
—
0.9
rf
—
0.55
0.7
Forward resistance
VR = 6 V, f = 1 MHz
Ω
IF = 2 mA, f = 100 MHz
Note : Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.0, Jun. 2000, page 2 of 5
HVD133
Main Characteristic
10
-10
-2
10
-4
-11
10
-6
Reverse current I
10
10
Ta= 75°C
R
(A)
Forward current I F (A)
10
-8
Ta= 75°C
Ta= 50°C
-10
-12
10
Ta= 50°C
10-13
10
Ta= 25°C
Ta= 25°C
-12
10-14
0
10
0
0.6
0.8
0.2
0.4
Forward voltage VF (V)
1.0
5
10
15
20
30
25
Reverse voltage VR (V)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
3
10
f=1MHz
f=100MHz
Forward resistance r f (Ω )
Capacitance C (pF)
10
1.0
0.1
0.1
2
10
10
0
10
10
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
1
-1
-5
10
-4
10
-3
10
-2
10
Forward current I F (A)
Fig.4 Forward resistance Vs. Forward current
Rev.0, Jun. 2000, page 3 of 5
HVD133
Package Dimensions
0.13 ± 0.05
0.5 − 0.55
1.0 ± 0.10
1.4 ± 0.10
0.3 ± 0.05
0.6 ± 0.05
Unit: mm
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
Rev.0, Jun. 2000, page 4 of 5
SFP


0.0010 g
HVD133
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.0, Jun. 2000, page 5 of 5