联络人：肖先生 136-3264-8484 / [email protected] High speed FieldStop Trench IGBT General Description Features This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. High Speed Switching & Low Power Loss VCE(sat) = 1.9V @ IC = 40A High Input Impedance trr = 60ns (typ.) Applications PFC UPS Inverter TO-247 G C E Absolute Maximum Ratings Characteristics Collector-emitter voltage Gate-emitter voltage TC=25°C Collector current TC=100°C Pulsed collector current, pulse time limited by Tjmax Symbol Rating Unit VCES 1000 V VGES ±20 V 80 A 40 A IC ICM 120 A Diode forward current @ TC = 100°C IF 40 A Diode pulsed current, Pulse time limited by Tjmax IFM 120 A 333 W 111 W tsc 5 μs TJ, Tstg -55~150 °C Symbol Rating Unit Thermal resistance junction-to-ambient RθJA 40 Thermal resistance junction-to-case for IGBT RθJC 0.45 Thermal resistance junction-to-case for Diode RθJC 0.8 TC=25°C Power dissipation TC=100°C Short circuit withstand time VCE = 600V, VGE = 15V, TC = 150°C Allowed number of short circuit < 1000 Time between short circuits ≥ 1.0s Operating Junction and storage temperature range PD Thermal Characteristics Characteristics Nov. 2013 Revision 0.0 1 °C/W MagnaChip Semiconductor Ltd. MBQ40T100FDS 1000V FieldStop Trench IGBT Datasheet MBQ40T100FDS 联络人：肖先生 136-3264-8484 / [email protected] Part Number Marking Temp. Range Package Packing RoHS Status MBQ40T100FDSTH 40T100FDS -55~150°C TO-247 Tube Pb Free Electrical Characteristics (Tc =25oC unless otherwise specified) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Collector-emitter breakdown voltage BVCES IC = 1mA, VGE = 0V 1000 - - V Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 1mA 4.5 5.5 6.5 V Zero gate voltage collector current ICES VCE = 1000V, VGE = 0V - - 1 mA Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±250 nA IC = 40A, VGE = 15V, TC = 25°C 1.9 2.3 IC = 40A, VGE = 15V, TC = 150°C 2.35 Collector-emitter saturation voltage VCE(sat) V Dynamic and Switching Characteristics Total gate charge Qg Gate-emitter charge Qge VCE = 600V, IC = 40A, VGE = 15V - 258 - - 34 - Gate-collector charge Qgc - 127 - Input capacitance Cies - 6471 - VCE = 30V, VGE = 0V, f = 1MHz Reverse transfer capacitance Cres - 75 - Output capacitance Coes - 126 - Turn-on delay time td(on) - 80 - tr - 45 - - 240 - - 15 - Rise time Turn-off delay time td(off) Fall time tf VGE = 15V, VCC = 600V, , IC = 40A, RG = 10Ω Inductive Load, TC = 25°C Turn-on switching energy Eon - 1.8 - Turn-off switching energy Eoff - 0.4 - Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Ets - 2.2 - td(on) - 85 - tr - 50 - td(off) - 280 - - 55 - - 2.6 - tf VGE = 15V, VCC = 600V, , IC = 40A, RG = 10Ω Inductive Load, TC = 150°C Turn-on switching energy Eon Turn-off switching energy Eoff - 0.8 - Total switching energy Ets - 3.4 - IF = 40A, TC = 25°C - 2.5 3.3 IF = 40A, TC = 150°C - 2.2 nC pF ns mJ ns mJ o Diode Characteristics (Tc =25 C unless otherwise specified) Forward voltage VF Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Reverse recovery time - 60 - ns - 4.4 - A Qrr - 143 - nC trr - 140 - ns - 11 - A - 770 - nC Reverse recovery current Irr Reverse recovery charge Qrr Nov. 2013 Revision 0.0 V IF = 40A, di/dt = 200A/ μs, TC = 25°C IF = 40A, di/dt = 200A/ μs, TC = 150°C 2 MagnaChip Semiconductor Ltd. MBQ40T100FDS 1000V FieldStop Trench IGBT Datasheet Ordering Information 联络人：肖先生 136-3264-8484 / [email protected] 150 20V TC = 25C 12.0V 15V 160 Common Emitter VGE = 15V TC = 25C TC = 150C 10.0V 8.0V 120 Collector Current, IC [A] Collector Current, IC [A] 140 120 100 80 VGE = 6V 60 40 90 60 30 20 0 0 0 1 2 3 4 5 0 6 1 3 4 5 Fig.2 Typical Collector-Emitter Saturation Voltage Fig.1 Typical Output Characteristics 120 3.5 VCE = 20V TC = 25C TC = 150C 80A Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] 100 Collector Current, IC [A] 2 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage VCE [V] 80 60 40 3.0 2.5 40A 2.0 20A 20 1.5 25 0 0 4 8 12 50 Gate-Emitter Voltage VGE [V] 100 125 150 Fig.4 Typical Collector-Emitter Saturation Voltage at Case Temperature Fig.3 Typical Transfer Characteristics 350 30 TC =25C TC = 150C TC = 25C TC = 150C Short Circuit Withstand Time, tSC [㎲ ] Short Circuit Collector current, IC(SC) [A] 75 Case Temperature, TC [C] 300 250 200 150 12 14 16 20 10 0 12 18 14 16 18 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig.5 Typical Short Circuit Collector Current Fig.6 Typical Short Circuit Withstand Time Nov. 2013 Revision 0.0 3 MagnaChip Semiconductor Ltd. MBQ40T100FDS 1000V FieldStop Trench IGBT Datasheet 180 联络人：肖先生 136-3264-8484 / [email protected] VGE = 0V f = 1MHz TC =25C Cies Gate-Emitter Voltage, VGE, [V] 8000 Capacitance [pF] VCC = 200V VCC = 600V 14 6000 4000 Coes 2000 12 10 8 6 4 2 Cres 0 0 0 5 10 15 20 25 0 30 50 100 Collector-Emitter Voltage, VCE [V] 200 250 300 Fig.8 Typical Gate Charge Fig.7 Typical Capacitance 220 10 Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25C TC = 150C Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25C TC = 150C 200 180 Switching Time [nS] Switching Loss [mJ] 150 Total Gate Charge, QG [nC] Eon 1 160 td(on) 140 120 tr 100 Eoff 80 60 40 0 10 20 30 40 50 60 0 70 10 20 30 40 50 60 70 Gate Resistance, RG [ohm] Gate Resistance, RG [ohm] Fig.9 Switching Loss-Gate Resistance Fig.10 Turn on Characteristics-Gate Resistance 3 1000 Switching Loss [mJ] Switching Time [nS] Eon Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25C TC = 150C td(off) 100 2 Common Emitter VCC = 600V, VGE = 15V IC = 40A RG = 10ohm 1 tf Eoff 10 0 10 20 30 40 50 60 0 25 70 Gate Resistance, R G [ohm] 75 100 125 150 Case Temperature, T C [C] Fig.12 Switching Loss-Case Temperature Fig.11 Turn off Characteristics-Gate Resistance Nov. 2013 Revision 0.0 50 4 MagnaChip Semiconductor Ltd. MBQ40T100FDS 1000V FieldStop Trench IGBT Datasheet 16 10000 联络人：肖先生 136-3264-8484 / [email protected] Common Emitter VCC = 600V VGE = 15V RG = 10ohm TC = 150C Switching Time [nS] Switching Loss [mJ] 3 td(on) Eon 2 Eoff 1 Common Emitter VGE = 15V RG = 10ohm TC = 25C TC = 150C tr 0 20 30 40 50 60 70 20 30 Collector Current, I C [A] 40 50 60 Collector Current, I C [A] Fig.14 Typical Turn on-Collector Current Fig.13 Switching Loss-Collector Current 100 TC = 25C TC = 150C Common Emitter VGE = 15V RG = 10ohm TC = 25C TC = 150C 100 Forward Current, IF [A] Switching Time [nS] td(off) tf 10 1 0.1 10 20 30 40 50 60 0 1 Collector Current, I C [A] Fig.15 Typical Turn off-Collector Current 3 TC = 25C TC = 150C 100 di/dt=100A/us di/dt=200A/us 100 di/dt=100A/us 50us 100us 10 200us 500us 1 di/dt=200A/us 20 30 DC 40 50 0.1 60 1 Forward Current, IF [A] 10 100 1000 Collector-Emitter Voltage,V CE [V] Fig.18 Forward Bias Safe Operating Area Fig.17 Typical Turn off-Collector Current Nov. 2013 Revision 0.0 4 Fig.16 Diode Forward Characteristics Collector Current,IC, [A] Reverse Recovery Time, trr [ns] 2 Forward Voltage, VF [V] 5 MagnaChip Semiconductor Ltd. MBQ40T100FDS 1000V FieldStop Trench IGBT Datasheet 100 4 联络人：肖先生 136-3264-8484 / [email protected] Triangle IC Collector Current [A] Collector Current,IC, [A] 100 10 100 Rectangle 50 VGE = 15V, TC = 150'C 1 1 10 100 0 1000 1 10 100 1000 Switching Frequency [kHz] Collector-Emitter Voltage,VCE [V] Fig.20 Switching frequency – Collector current Fig.19 Reverse Bias Safe Operating Area 90 D=0.9 80 Thermal Response [Z th-JC ] 0.5 Collector Current, IC [A] 70 60 50 40 30 20 -1 10 0.1 0.05 0.02 -2 10 0.01 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z? JC* R? JC(t) + TC 10 0 25 -3 50 75 100 125 10 150 -5 1x10 -4 1x10 -3 10 -2 10 -1 10 0 10 Rectangular Pulse width [sec] Case Temperature, TC [C] Fig.21 Case Temperature – Collector Current Nov. 2013 Revision 0.0 -6 10 Fig.22 IGBT Transient Thermal Impedance 6 MagnaChip Semiconductor Ltd. MBQ40T100FDS 1000V FieldStop Trench IGBT Datasheet 150 联络人：肖先生 136-3264-8484 / [email protected] TO-247 E ΦP Dimensions are in millimeters, unless otherwise specified A L1 D E2 D1 S Q A2 b2 L b1 b E1 c e Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 5.49 e L 5.45BSC 19.81 20.57 L1 - 4.50 ΦP 3.50 3.70 Q 5.38 6.20 S Nov. 2013 Revision 0.0 A1 6.15BSC 7 MagnaChip Semiconductor Ltd. MBQ40T100FDS 1000V FieldStop Trench IGBT Datasheet Physical Dimension 联络人：肖先生 136-3264-8484 / [email protected] MBQ40T100FDS 1000V FieldStop Trench IGBT Datasheet DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 8 Nov. 2013 Revision 0.0 MagnaChip Semiconductor Ltd.