FGA15N120FTD tm 1200V, 15A Field Stop Trench IGBT Features • Field stop trench technology General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggeness. This device is designed for soft switching applications. • Low saturation voltage: VCE(sat) =1.58V @ IC = 15A • High input impedance • RoHS complaint Applications • Induction heating and Microwave oven • Soft switching applications C G TO-3PN G CE E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC V ± 25 V @ TC = 25oC 30 A Collector Current o 15 A 45 A 15 A 90 A 220 W @ TC = 100 C Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current TJ Units 1200 Collector Current ICM (1) PD Ratings @ TC = 100oC o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C 88 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units oC/W RθJC(IGBT) Thermal Resistance, Junction to Case - 0.57 RθJC(Diode) Thermal Resistance, Junction to Case - 2.1 o C/W 62.5 o C/W RθJA Thermal Resistance, Junction to Ambient ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. A 1 www.fairchildsemi.com FGA15N20FTD 1200V, 15A Trench IGBT January 2008 Device Marking Device Package Reel Size Tape Width Quantity FGA15N120FTD FGA15N120FTDTU TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA IC = 15mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 6 7.5 V IC = 15A, VGE = 15V - 1.58 2 V IC = 15A, VGE = 15V, TC = 125oC - 1.83 - V - 2350 - pF - 70 - pF - 45 - pF 33 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - tr Rise Time - 80 - ns td(off) Turn-Off Delay Time - 160 - ns tf Fall Time - 255 330 ns Eon Turn-On Switching Loss - 0.3 - mJ Eoff Turn-Off Switching Loss - 0.58 0.74 mJ Ets Total Switching Loss - 0.88 - mJ td(on) Turn-On Delay Time - 30 - ns tr Rise Time - 115 - ns td(off) Turn-Off Delay Time - 170 - ns tf Fall Time - 390 - ns Eon Turn-On Switching Loss - 0.38 - mJ Eoff Turn-Off Switching Loss - 0.89 - mJ Ets Total Switching Loss - 1.27 - mJ Qg Total Gate Charge - 100 - nC - 19 - nC - 45 - nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGA15N120FTD Rev. A VCC = 600V, IC = 15A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 15A, RG = 15Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 600V, IC = 15A, VGE = 15V 2 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Cyrrent Qrr Diode Reverse Recovery Charge FGA15N120FTD Rev. A TC = 25°C unless otherwise noted Test Conditions IF = 15A IES =15A, dI/dt = 200A/µs Min. Typ. Max TC = 25oC - 1.4 1.8 TC = 125oC - 1.42 - TC = 25oC - 575 - - 577 - TC = 25oC - 30 - o TC = 125 C - 37 - TC = 25oC - 8.7 - o - 10.7 - TC = 125oC TC = 125 C 3 Units V ns A µC www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics o o TC = 25 C TC = 125 C 20V 17V 90 15V 12V 60 10V 30 20V 17V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics 120 120 90 12V 15V 60 10V 30 VGE = 8V VGE = 8V 0 0 0 2 4 6 8 10 Collector-Emitter Voltage, VCE [V] 0 12 Figure 3. Typical Saturation Voltage Characteristics 100 Common Emitter VCE = 20V Common Emitter VGE = 15V o 80 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 12 Figure 4. Transfer Characteristics 100 o TC = 125 C 60 40 20 o 80 TC = 25 C o TC = 125 C 60 40 20 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 2 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 6 8 10 12 Gate-Emitter Voltage,VGE [V] 14 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Common Emitter 30A 2.4 2.0 15A 1.6 IC = 10A 1.2 25 4 Figure 6. Saturation Voltage vs. VGE 2.8 Collector-Emitter Voltage, VCE [V] 2 4 6 8 10 Collector-Emitter Voltage, VCE [V] o TC = 25 C 16 12 8 4 0 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] FGA15N120FTD Rev. A 4 15A 30A IC = 10A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 4000 20 Common Emitter VGE = 0V, f = 1MHz Common Emitter Cies 16 12 8 2000 Coes 1000 15A 4 30A Cres IC = 10A 0 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 1 20 Figure 9. Gate charge Characteristics o TC = 25 C VCC = 200V 10µs Collector Current, Ic [A] 400V 600V 5 0 0 30 60 90 Gate Charge, Qg [nC] 100µs 10 1ms 10ms IC MAX (Continuous) 1 DC Operation *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 0.01 120 1 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 1000 Collector-Emitter Voltage, VCE [V] 2000 Figure 12. Turn-off Characteristics vs. Gate Resistance 2000 300 Common Emitter VCC = 600V, VGE = 15V IC = 15A 1000 o 100 tr td(on) Common Emitter VCC = 600V, VGE = 15V IC = 15A td(off) TC = 25 C Switching Time [ns] Switching Time [ns] 30 200 100 IC MAX (Pulse) Common Emitter 10 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 15 Gate-Emitter Voltage, VGE [V] o TC = 25 C 3000 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C o TC = 125 C tf o TC = 25 C 100 o TC = 125 C 70 10 0 20 FGA15N120FTD Rev. A 40 60 80 Gate Resistance, RG [Ω] 100 0 20 40 60 80 100 Gate Resistance, RG [Ω] 5 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 600 Figure 14. Turn-off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 15Ω o tf TC = 25 C Switching Time [ns] TC = 125 C Switching Time [ns] tr o 100 td(on) td(off) 100 Common Emitter VGE = 15V, RG = 15Ω o TC = 25 C o TC = 125 C 10 10 15 20 25 10 10 30 15 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 30 10000 Common Emitter VCC = 600V, VGE = 15V Common Emitter VGE = 15V, RG = 15Ω IC = 15A TC = 25 C o o TC = 25 C Switching Loss [µJ] Switching Loss [µJ] 25 Figure 16. Switching Loss vs. Collector Current 10000 o TC = 125 C Eoff 1000 Eon 100 20 Collector Current, IC [A] 0 20 40 60 80 Gate Resistance, RG [Ω] o TC = 125 C Eoff 1000 Eon 100 10 100 15 20 25 30 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 40 Forward Current, IF [A] Collector Current, IC [A] 80 10 10 o TJ = 125 C o TJ = 25 C 1 o TC = 25 C Safe Operating Area o VGE = 15V, TC = 125 C o TC = 125 C 0.1 0.0 1 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] FGA15N120FTD Rev. A 6 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 14000 12000 Stored Recovery Charge, Qrr [nC] Reverse Recovery Currnet, Irr [A] 40 200A/µs 30 200A/µs 10000 20 di/dt = 100A/µs 10 0 5 10 15 20 Forward Current, IF [A] 25 30 25 30 8000 6000 di/dt = 100A/µs 4000 2000 0 5 10 15 20 Forward Current, IF [A] 25 30 Figure 21.Reverse Recovery Time Reverse Recovery Time, trr [ns] 800 di/dt = 100A/µs 600 200A/µs 400 200 5 10 15 20 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGA15N120FTD Rev. A 7 www.fairchildsemi.com FGA15N120FTD 1200V, 15A Trench IGBT Typical Performance Characteristics FGA15N120FTD 1200V, 15A Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters FGA15N120FTD Rev. 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