FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. • Low saturation voltage: VCE(sat) =1.6V @ IC = 20A • High input impedance • RoHS compliant Applications • Induction heating and Microvewave oven • Soft switching applications C G TO-3PN E G C E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC V ± 25 V @ TC = 25oC 40 A Continuous Collector Current o 20 A 60 A 20 A 298 W Pulsed Collector Current IF Diode Continuous Forward Current TJ Units 1200 Continuous Collector Current ICM (1) PD Ratings @ TC = 100 C @ TC = 25oC o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C 119 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive rating, Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.42 o C/W RθJC(Diode) Thermal Resistance, Junction to Case - 2.0 o C/W 40 o C/W RθJA Thermal Resistance, Junction to Ambient ©2007 Fairchild Semiconductor Corporation FGA20N120FTD Rev. A - 1 www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT December 2007 Device Marking Device Package Reel Size Tape Width Quantity FGA20N120FTD FGA20N120FTDTU TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±250 nA G-E Threshold Voltage IC = 20mA, VCE = VGE 3.5 5.9 7.5 V - 1.60 2.00 V Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V TC = 25oC - 1.85 - V - 3080 - pF - 95 - pF - 60 - pF On Characteristics VGE(th) VCE(sat) IC = 20A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 30 - ns tr Rise Time - 79 - ns td(off) Turn-Off Delay Time - 143 - ns tf Fall Time - 217 320 ns Eon Turn-On Switching Loss - 0.42 - mJ Eoff Turn-Off Switching Loss - 0.71 1.05 mJ Ets Total Switching Loss - 1.13 - mJ td(on) Turn-On Delay Time - 29 - ns tr Rise Time - 93 - ns td(off) Turn-Off Delay Time - 147 - ns tf Fall Time - 259 - ns Eon Turn-On Switching Loss - 0.47 - mJ Eoff Turn-Off Switching Loss - 0.86 - mJ Ets Total Switching Loss - 1.33 - mJ Qg Total Gate Charge - 137 - nC Qge Gate to Emitter Charge - 23 - nC Qgc Gate to Collector Charge - 65 - nC VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 600V, IC = 20A, VGE = 15V 2 FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions IF = 20A IES =20A, dI/dt = 200A/µs Typ. Max - 1.3 1.7 TC = 125oC - 1.3 - TC = 25oC - 447 - - 485 - TC = 25oC - 48 - o TC = 125 C - 50 - TC = 25oC - 10.8 - o - 12 - TC = 125oC TC = 125 C 3 FGA20N120FTD Rev. A Min. TC = 25oC Units V ns A µC www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics o TC = 25 C 20V TC = 125 C Collector Current, IC [A] 12V 90 60 8V 7V V = 6V GE 20V 17V 150 120 30 o 17V 15V 150 Collector Current, IC [A] Figure 2. Typical Output Characteristics 180 180 10V 15V 120 90 12V 60 7V VGE = 6V 10V 30 9V 9V 0 0.0 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 8V 0 0.0 9.0 Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V 100 TC = 25 C o TC = 125 C 80 Common Emitter VCE = 20V 100 o Collector Current, IC [A] Collector Current, IC [A] 9.0 Figure 4. Transfer Characteristics 120 60 40 o TC = 25 C o TC = 125 C 80 60 40 20 20 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 3 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 6 9 12 Gate-Emitter Voltage,VGE [V] 15 Figure 6. Saturation Voltage vs. VGE 2.8 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 1.5 3.0 4.5 6.0 7.5 Collector-Emitter Voltage, VCE [V] 40A 2.4 2.0 20A 1.6 IC = 10A Common Emitter o TC = 25 C 16 12 8 4 40A 20A IC = 10A 1.2 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 4 FGA20N120FTD Rev. A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 5000 Common Emitter TC = 125 C Common Emitter VGE = 0V, f = 1MHz Cies 16 o 4000 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o 12 8 20A 4 TC = 25 C 3000 2000 Coes 1000 40A Cres IC = 10A 0 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 1 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] Figure 10. SOA Characteristics 100 15 Common Emitter 10µs o TC = 25 C 12 VCC = 200V 9 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 600V 400V 6 100µs 10 1ms 10 ms DC 1 *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 3 0.01 0 0 30 60 90 120 Gate Charge, Qg [nC] 1 150 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-off Characteristics vs. Gate Resistance 300 2000 Common Emitter VCC = 600V, VGE = 15V IC = 20A 1000 tr td(on) TC = 25 C Switching Time [ns] Switching Time [ns] o 100 Common Emitter VCC = 600V, VGE = 15V IC = 20A o td(off) TC = 125 C tf o TC = 25 C 100 o TC = 125 C 10 0 20 40 60 80 Gate Resistance, RG [Ω] 70 100 20 40 60 80 100 Gate Resistance, RG [Ω] 5 FGA20N120FTD Rev. A 0 www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 500 Figure 14. Turn-off Characteristics vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C tr tf Switching Time [ns] Switching Time [ns] o TC = 125 C 100 td(on) td(off) 100 Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 125 C 10 10 20 30 40 10 10 50 20 Collector Current, IC [A] Figure 15. Switching Loss vs. Gate Resistance 40 50 Figure 16. Switching Loss vs. Collector Current 10 4 Common Emitter VCC = 600V, VGE = 15V Common Emitter VGE = 15V, RG = 10Ω IC = 20A o TC = 25 C TC = 25 C Switching Loss [mJ] o Switching Loss [mJ] 30 Collector Current, IC [A] Eoff o TC = 125 C 1 Eon 0.3 0 20 40 60 80 Gate Resistance, RG [Ω] o TC = 125 C 1 0.1 10 100 Eoff Eon 20 30 40 50 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 30 80 Forward Current, IF [A] Collector Current, IC [A] 10 10 o TJ = 25 C 1 o TC = 125 C Safe Operating Area o o TC = 25 C VGE = 15V, TC = 125 C 1 1 10 100 0.1 0.0 1000 2000 Collector-Emitter Voltage, VCE [V] 6 FGA20N120FTD Rev. A o TJ = 125 C 0.5 1.0 1.5 Forward Voltage, VF [V] 2.0 www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 15000 Stored Recovery Charge, Qrr [nC] Reverse Recovery Currnet, Irr [A] 60 50 200A/µs 40 30 20 di/dt = 100A/µs 10 0 5 10 15 20 Forward Current, IF [A] 12000 200A/µs 9000 di/dt = 100A/µs 6000 3000 0 25 5 10 15 20 25 Forward Current, IF [A] Figure 21.Reverse Recovery Time Reverse Recovery Time, trr [ns] 1000 800 di/dt = 100A/µs 600 200A/µs 400 200 0 5 10 15 20 25 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] 7 FGA20N120FTD Rev. A 1 10 www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT Typical Performance Characteristics FGA20N120FTD 1200V, 20A Trench IGBT Mechanical Dimensions TO-3PN Dimensions in Millimeters 8 FGA20N120FTD Rev. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 9 FGA20N120FTD Rev. A www.fairchildsemi.com FGA20N120FTD 1200V, 20A Trench IGBT TRADEMARKS