MBR10200 Summarize Primary Use Productor Character Dual High-Voltage Schottky Rectifiers ◆ Half Bridge Rectified、Common Cathode Structure. ◆ Multilayer Metal -Silicon Potential Structure. ◆ Low Power Waste，High Efficiency. ◆ Beautiful High Temperature Character. ◆ Have Over Voltage protect loop，high reliability. ◆ RoHs Product. REV:1.01 Typical Reference Data VRRM= 200V IF(AV)= 10A ● Low Voltage High Frequency Switching Power Supply. ● Low Voltage High Frequency ● Low Voltage Continued Invers Circuit. Circuit and Protection Circuit. ■ MBR10200 Schottky diode,in the manufacture uses the main process technology includes: Silicon epitaxial substrate, P+ loop technology,The potential metal and the silicon alloy technology, the device uses the two chip, the common cathode, the plastic half package structure. Polarity Absolute Maximum Ratings Item Maximal Inverted Repetitive Peak Voltage Maximal DC Interdiction Voltage Average Rectified Forward Current TC=150℃ Device VDC MBR10200 200 200 IFAV 10 Symbol VRRM Whole Unit A 5 Unilateral Forward Peak Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) Operating Junction Temperature Storage Temperature IFSM 150 A TJ -40- +175 ℃ TSTG -40- +175 ℃ Representat ive MBR10200 Unit 50 uA 1 mA 1 V Electricity Character Item IR VF Test Condition TJ =25℃ TJ =125℃ TJ =25℃ Minimum VR=VRRM IF=5A www.asemi.tw Page 1 MBR10200 Dual High-Voltage Schottky Rectifiers The forward voltage and forward current curve REV:1.01 The reverse leak current and the reverse voltage (single-device) curve The crunode capacitance curve www.asemi.tw Page 2 MBR10200 Dual High-Voltage Schottky Rectifiers REV:1.01 TO-220AB www.asemi.tw Page 3