ETC MBR10150

MBR10150
Summarize
Primary Use
Productor
Character
Dual High-Voltage Schottky Rectifiers
◆
Half Bridge Rectified、Common Cathode Structure.
◆
Multilayer Metal -Silicon Potential Structure.
◆
Low Power Waste,High Efficiency.
◆
Beautiful High Temperature Character.
◆
Have Over Voltage protect loop,high reliability.
◆
RoHs Product.
REV:1.01
Typical Reference
Data
VRRM= 150V
IF(AV)= 10A
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency
● Low Voltage Continued
Invers Circuit.
Circuit and Protection Circuit.
■ MBR10150 Schottky diode,in the manufacture uses the main
process technology includes: Silicon epitaxial substrate, P+
loop technology,The potential metal and the silicon alloy
technology, the device uses the two chip, the common cathode,
the plastic package structure.
Polarity
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
Average Rectified Forward Current TC=150℃
Device
VDC
MBR10150
150
150
IFAV
10
Symbol
VRRM
Whole
Unit
A
5
Unilateral
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Operating Junction Temperature
IFSM
150
A
TJ
-40- +175
℃
TSTG
-40- +175
℃
Representat
ive
MBR10150
Unit
100
uA
1
mA
0.90
V
Storage Temperature
Electricity Character
Item
IR
VF
Test
Condition
TJ =25℃
TJ =125℃
TJ =25℃
Minimum
VR=VRRM
IF=5A
www.asemi.tw
Page 1
MBR10150
Dual High-Voltage Schottky Rectifiers
The forward voltage and forward current curve
The crunode capacitance curve
REV:1.01
The reverse leak current and the reverse
voltage (single-device) curve
Current Derating Curve, Per Element
www.asemi.tw
Page 2
MBR10150
Dual High-Voltage Schottky Rectifiers
REV:1.01
ITO-220AB
注意事项:
1. 以金属螺丝(规格4-40)并加4.9mm直径金属垫片,将ITO-220AB自螺丝孔锁
在金属散热片上。
2 XXXX代表日期码,第一码表示公元年的最后一码,第二码表示生产时当月码
(A,B,C⋯.为一月,二月,三月⋯),第三,四码表示大量生产时批次码。
例如:2009年第一月生产的,D/C为9AXX。
3. 包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。
MBR10150
XXXX
修订内容
www.asemi.tw
Page 3