MBR10150 Summarize Primary Use Productor Character Dual High-Voltage Schottky Rectifiers ◆ Half Bridge Rectified、Common Cathode Structure. ◆ Multilayer Metal -Silicon Potential Structure. ◆ Low Power Waste，High Efficiency. ◆ Beautiful High Temperature Character. ◆ Have Over Voltage protect loop，high reliability. ◆ RoHs Product. REV:1.01 Typical Reference Data VRRM= 150V IF(AV)= 10A ● Low Voltage High Frequency Switching Power Supply. ● Low Voltage High Frequency ● Low Voltage Continued Invers Circuit. Circuit and Protection Circuit. ■ MBR10150 Schottky diode,in the manufacture uses the main process technology includes: Silicon epitaxial substrate, P+ loop technology,The potential metal and the silicon alloy technology, the device uses the two chip, the common cathode, the plastic package structure. Polarity Absolute Maximum Ratings Item Maximal Inverted Repetitive Peak Voltage Maximal DC Interdiction Voltage Average Rectified Forward Current TC=150℃ Device VDC MBR10150 150 150 IFAV 10 Symbol VRRM Whole Unit A 5 Unilateral Forward Peak Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) Operating Junction Temperature IFSM 150 A TJ -40- +175 ℃ TSTG -40- +175 ℃ Representat ive MBR10150 Unit 100 uA 1 mA 0.90 V Storage Temperature Electricity Character Item IR VF Test Condition TJ =25℃ TJ =125℃ TJ =25℃ Minimum VR=VRRM IF=5A www.asemi.tw Page 1 MBR10150 Dual High-Voltage Schottky Rectifiers The forward voltage and forward current curve The crunode capacitance curve REV:1.01 The reverse leak current and the reverse voltage (single-device) curve Current Derating Curve, Per Element www.asemi.tw Page 2 MBR10150 Dual High-Voltage Schottky Rectifiers REV:1.01 ITO-220AB 注意事项： 1. 以金属螺丝(规格4-40)并加4.9mm直径金属垫片，将ITO-220AB自螺丝孔锁 在金属散热片上。 2 XXXX代表日期码，第一码表示公元年的最后一码，第二码表示生产时当月码 （A,B,C⋯.为一月，二月，三月⋯),第三，四码表示大量生产时批次码。 例如:2009年第一月生产的，D/C为9AXX。 3. 包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。 MBR10150 XXXX 修订内容 www.asemi.tw Page 3