JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes MBR10150,200 TO-220A SCHOTTKY BARRIER RECTIFIER 1. CATHODE FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 2. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Value Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage Unit MBR10150 MBR10200 150 200 V 105 140 V 10 A 150 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IO IFSM PD RΘJA Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage Symbol V(BR) Device MBR10150 Test conditions IR=0.1mA MBR10200 Reverse current IR Forward voltage VF Typical junction capacitance Cj VR=150V MBR10200 VR=200V MBR10200 MBR10150 MBR10200 Typ Max 150 Unit V 200 MBR10150 MBR10150 Min 9 1 IF=10A VR=4V,f=1MHz 1.05 500 200 μA V pF A,Nov,2010