ASEMI MBR20L100/MBR20L100F

MBR20L100/MBR20L100F
High-Voltage Schottky Diodes
REV:1.01
Productor Character
◆
◆
◆
◆
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TO-220AB
fabricated by CMOS IC processing
Low Power Waste,High Efficiency.
Beautiful High Temperature Character.
Have Over Voltage protect loop,high reliability.
RoHs Product.
1
ITO-220AB
Primary Use
2
3
● Low Forward Voltage Drop.
● Reliable High Temperature Operation.
● Softest, fast switching capability.
● 150℃ Operating Junction Temperature
1
2
3
Summarize
■ MBR20L100/MBR20L100F Device optimized for ultra-low
forward voltage drop to maximize efficiency in Power
Supply applications
Device
ITO-220AB-1.74g
Weight :
TO-220AB-1.96g
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
*Average Rectified Forward Current (Rated VR-20Khz Square
Wave) - 50% duty cycle
Typical Thermal Resistance (per leg)
Package = TO-220AB
Package =ITO-220AB
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Maximum Rate of Voltage Change ( at Rated VR )
Peak Repetitive Reverse Surge Current (2uS-1Khz)
Operating Junction Temperature
Storage Temperature
Symbol
VRRM
Data
100
Unit
V
IFAV
20
A
2
℃/W
4
℃/W
IFSM
200
A
dv/dt
IRRM
TJ
TSTG
10000
1
-40- +150
-40- +150
V/uS
A
RθJc
℃
℃
Electricity Character
Item
IR
VF
TJ
TJ
TJ
TJ
Test Condition
=25℃
VR=VRRM
=125℃
=25℃
IF=10A
=125℃
IF=10A
*IF(AV)= 10A×2
TPY.
0.6
MAX.
100
100
0.72
0.64
Unit
uA
mA
V
V
MBR20L100/MBR20L100F
High-Voltage Schottky Diodes
REV:1.01
The reverse leak current and the reverse
voltage (single-device) curve.
30
10000.0
0.369
0.42
0.424
0.452
0.48
0.51
125℃
0.51
0.54
0.58
0.63
0.64
0.69
0.75
0.81
0.9
0.99
1.25
25℃ 1.45
28
26
24
22
20
18
16
14
Ir, Reverse Current (uA)
If, Instantaneous Forward Current (A)
The forward voltage and forward current curve.
0.1
2
4
5
8
10
15
20
30
1000.0
12
10
8
6
100.0
125℃
25℃
10.0
4
2
0
1.0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
1.7
10
20
The crunode capacitance curve
If, Average Forward Current (A)
Capacitance (pF)
30
0
0
0
0
0
5500
5000
4000
3200
2000
500
1
2
5
10
20
98.40111058
100
50
60
70
80
90
100
Current Derating Curve, Per Element
1
5
17
92
100
1000
40
VR, Reverse Voltage (V)
Vf, Instantaneous Forward Voltage (V)
10000
30
780
840
880
920
1200
25
20
15
6
7
8
10
13
0
100
150
10
20
20
0.01
5
0
10
1
10
100
0
25
50
75
100
125
150
Reverse Voltage (V)
Tc, Case Temp (℃)
175
MBR20L100/MBR20L100F
High-Voltage Schottky Diodes
REV:1.01
Package Outline Dimensions millimeters
TO-220
ITO-220
Ordering information
Part Number
MBR20L100
MBR20L100F
MBR20L100
XXXX
Package
TO-220
ITO-220
Delivery mode
50 pieces / tube
50 pieces / tube
1.XXXX代表日期码,第一码表示公元年的最后一码,第二码表示生产时当月码
(A,B,C⋯.为一月,二月,三月⋯),第三,四码表示大量生产时批次码。
例如:2009年第一月生产的,D/C为9AXX。
2.包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。
3.ITO-220封装后面加“F”区别
注意事项
1)凡江阴金泰电子有限公司出厂的产品,均符合相应规格书的电参数和外形尺寸要求;对于客户有特殊要求的产品,双方应签订相关技术协议。
2)在安装时,要注意减少机械应力的产生,防止由此引起的产品失效;避免靠近发热元件;焊接上锡时要注意控制温度和时间。
3) 本规格书由江阴市金泰电子有限公司制作,并不断更新,更新时不再专门通知。