Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS General Description Features The AZ7500B/C is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control. · The AZ7500B/C consists of a reference voltage circuit, two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, and an output control circuit. The precision of voltage reference (VREF) is improved up to ± 1% through trimming and this provides a better output voltage regulation. The AZ7500B/C provides for pushpull or single-ended output operation, which can be selected through the output control. · The difference between AZ7500B and AZ7500C is that they have 4.95V and 5V reference voltage respectively. The AZ7500B/C is available in standard packages of DIP-16 and SOIC-16. · · · · AZ7500B/C Stable 4.95V/5V Reference Voltage Trimmed to ±1.0% Accuracy Uncommitted Output TR for 200mA Sink or Source Current Single-End or Push-Pull Operation Selected by Output Control Internal Circuitry Prohibits Double Pulse at Either Output Complete PWM Control Circuit with Variable Duty Cycle On-Chip Oscillator With Master or Slave Operation Applications · · · SMPS Back Light Inverter Charger DIP-16 SOIC-16 Figure 1. Package Types of AZ7500B/C BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 1 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Pin Configuration M / P Package (SOIC-16 / DIP-16) 1IN + 1 16 2IN + 1IN - 2 15 2IN - FEEDBACK 3 14 REF DTC 4 13 OUTPUT CTRL CT 5 12 VCC RT 6 11 C2 GND 7 10 E2 C1 8 9 E1 Top View Figure 2. Pin Configuration of AZ7500B/C Output Function Control Table Signal for Output Control Output Function VI = GND Single-ended or parallel output VI = VREF Normal push-pull operation Functional Block Diagram Output CTRL RT CT 6 5 Pulse-Steering Flip-Flop Dead-Time Control Comparator DTC 9 + Error Amplifier 1 1IN - 1 + 11 CK 2IN - FEEDBACK E1 C2 Q2 + 10 PWM Comparator E2 2 12 2IN + C1 Q1 D 4 0.12V 1IN + 8 13 Oscillator 16 Error Amplifier 2 + 14 Reference Regulator 15 0.7mA 7 VCC REF GND 3 Figure 3. Functional Block Diagram of AZ7500B/C BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 2 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Ordering Information AZ7500 E1: Lead Free Package Circuit Type Blank: Tin Lead Reference Voltage B: 4.95V C: 5.0V Package M: SOIC-16 P: DIP-16 Temperature Range SOIC-16 -40 to 85oC DIP-16 TR: Tape and Reel Blank: Tube Part Number Tin Lead Marking ID Lead Free Tin Lead Lead Free Packing Type AZ7500BM AZ7500BM-E1 AZ7500BM AZ7500BM-E1 Tube AZ7500BMTR AZ7500BMTR-E1 AZ7500BM AZ7500BM-E1 Tape & Reel AZ7500CM AZ7500CM-E1 AZ7500CM AZ7500CM-E1 Tube AZ7500CMTR AZ7500CMTR-E1 AZ7500CM AZ7500CM-E1 Tape & Reel AZ7500BP AZ7500BP-E1 AZ7500BP AZ7500BP-E1 Tube AZ7500CP AZ7500CP-E1 AZ7500CP AZ7500CP-E1 Tube The listed part numbers are used during the transition to lead-free products. After the transition completed, lead-free products will be considered as the "standard" and we will resume the original part numbers. BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 3 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage (Note 2) VCC 40 V Amplifier Input Voltage VI -0.3 to VCC + 0.3 V Collector Output Voltage VO 40 V Collector Output Current IO 250 mA Package Thermal Impedance (Note 3) θJA M Package 73 P Package 67 Lead Temperature 1.6mm from case for 10 seconds Storage Temperature Range TSTG oC/W 260 oC -65 to 150 oC 200 V ESD rating (Machine Model) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings"for extended periods may affect device reliability. Note 2: All voltage values are with respect to the network ground terminal. Note 3: Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = ( TJ(max) - TA ) / θJA. Operating at the absolute maximum TJ of 150oC can affect reliability. Recommended Operating Conditions Parameter Supply Voltage Symbol Min Typ Max Unit VCC 7 15 36 V 30 36 V 200 mA VCC - 2 V Collector Output Voltage VC1, VC2 Collector Output Current (Each Transistor) IC1, IC2 Amplifier Input Voltage VI Current Into Feedback Terminal IFB 0.3 mA Reference Output Current IREF 10 mA 0.3 Timing Capacitor CT 0.00047 0.001 10 µF Timing Resistor RT 1.8 30 500 KΩ Oscillator Frequency fosc 1.0 40 200 KHz 0.3 5.3 V TA -40 85 oC PWM Input Voltage (Pin 3, 4, 14) Operating Free-Air Temperature BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 4 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Electrical Characteristics TA = 25oC, VCC=20V, f=10KHz unless otherwise noted. Parameter Symbol Conditions Min Typ Max Unit Output Reference Voltage for AZ7500B VREF IREF=1mA 4.90 4.95 5.0 V IREF=1mA, TA= -40 to 85oC 4.85 4.95 5.05 V Output Reference Voltage for AZ7500C VREF IREF=1mA 4.95 5.0 5.05 V IREF=1mA, TA= -40 to 85oC 4.9 5.0 5.1 V Line Regulation RLINE VCC = 7V to 36V 2 25 mV Load Regulation RLOAD IREF=1mA to 10mA 1 15 mV 35 50 mA Reference Section Short-Circuit Output Current ISC VREF = 0V 10 Oscillator Section CT=0.001µF, RT=30KΩ, Oscillator Frequency fOSC 40 CT=0.01µF, RT=12KΩ 9.2 CT=0.01µF, RT=12KΩ, TA= -40 9.0 10 10.8 KHz 12 to 85oC Frequency Change with Temperature ∆f /∆T CT=0.01µF, RT=12KΩ, TA= -40 1 % -10 µA o to 85 C Dead-Time Control Section Input Bias Current IBIAS Maximum Duty Cycle, D(MAX) Input Threshold Voltage VITH VCC=15V, V4= 0 to 5.25V VCC=15V, V4= 0V, Pin 13= VREF -2 45 Zero Duty Cycle Maximum Duty Cycle % 3 3.3 V 0 Error-Amplifier Section Input Offset Voltage VIO V3 = 2.5V 2 10 mV Input Offset Current IIO V3 = 2.5V 25 250 nA Input Bias Current IBIAS V3 = 2.5V 0.2 1 µA Common-Mode Input Voltage Range VCM VCC=7V to 36V VCC-2 V Open-Loop Voltage Gain GVO VO =0.5V to 3.5V Unity-Gain Bandwidth BW Common-Mode Rejection Ratio CMRR Output Sink Current (Feedback) ISINK Output Source Current (Feedback) ISOURCE VID = -15mV to -5V, V3 = 0.7V VID=15mV to 5V V3 = 3.5V -0.3 70 95 dB 650 KHz 65 80 dB -0.3 -0.7 mA 2 mA BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 5 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Electrical Characteristics (Continued) Parameter Symbol Conditions Min Typ Max Unit 4 4.5 V PWM Comparator Section Input Threshold Voltage VITH Zero duty cycle Input Sink Current ISINK V3 = 0.7V -0.3 -0.7 mA Output Section Common Emitter VCE (SAT) VE = 0V, IC =200mA 1.1 1.3 Emitter Follower VCC (SAT) VCC = 15V, IE = -200mA 1.5 2.5 Collector Off-State Current IC (OFF) VCE = 36V, VCC=36V 2 100 µA Emitter Off-State Current IE(OFF) VCC = VC = 36V, VE = 0 -100 µA ICC Pin 6 = VREF, VCC=15V 6 10 mA Output Saturation Voltage V Total Device Supply Current Output Switching Characteristics Rise Time tR Common Emitter Common Collector 100 200 ns Fall Time tF Common Emitter Common Collector 25 100 ns BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 6 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Parametr Measurement information VCC = 20V 12 VCC 4 Test Inputs 3 12KΩ 6 5 DTC C1 FEEDBACK E1 RT C2 E2 CT 0.01uF 1 8 150Ω 4W 150Ω 4W Output 1 9 11 Output 2 10 1IN+ 2 1IN- 16 2IN+ 15 2IN- 13 OUTPUT CTRL GND 50KΩ REF 14 7 Test Circuit Voltage at C1 VCC Voltage at C2 VCC 0V 0V Voltage at CT Threshold Voltage DTC 0V Threshold Voltage FEEDBACK 0.7V Duty Cycle 0% MAX 0% Voltage Waveforms Figure 4. Operational Test Circuit and Waveforms BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 7 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Parametr Measurement information (Continued) Amplifier Under Test + VI FEEDBACK + Vref Other Amplifier Figure 5. Error Amplifier Characteristics 20V 68Ω 4W Each Output Circuit tf Output tr 90% 90% CL = 15pF (See Note A) 10% 10% Note A: CL includes probe and jig capacitance. Figure 6. Common-Emitter Configuration 20V Each Output Circuit 90% 90% Output CL = 15pF (See Note A) 10% 10% 68Ω 4W tr tf Note A: CL includes probe and jig capacitance. Figure 7. Emitter-Follower Configuration BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 8 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Typical Performance Characteristics VCC=20V f - Oscillator Frequency (Hz) 100k O TA=25 C 0.001uF 10k 0.01uF 0.1uF 1k 1k 10k 100k 1M RT - Timing Resistance (ohm) Figure 8. Oscillator Frequency vs. RT and CT 100 VCC=20V ∆VO=3V 90 Voltage Gain (dB) 80 o TA=25 C 70 60 50 40 30 20 10 0 1 10 100 1k 10k 100k 1M Frequency (Hz) Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 9 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Typical Applications (VI=10V to 40V) 1mH 2A KSA1010 VI(+) (VO=5V, IO=1A) VO 47 12 11 VCC 8 C2 1M 0.1µ 150 C1 2 FEED BACK 1IN- 2IN1IN+ 2IN+ DTC GND 4 7 E1 9 OUTPUT CONTROL 13 E2 10 14 + REF AZ7500B + 50µ 50V 5.1k 3 RT 6 47k 5.1k 15 5.1k 1 16 CT 150 5 + 50µ 10V 50µ + 10V 0.001µ GND 0.1 VI(-) Figure 10. Pulse Width Modulated Step -down Converter BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 10 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Mechanical Dimensions SOIC-16 1.65 1.00 1.30 Unit: mm 0.70 7° 0.406 7° A 20:1 0.55±0.05 0.25 B 1.27 10.00 ±2° 3° φ2.0 Depth 0.06～ 0.10 R0.20 R0.20 0.25(0.20min) 0.20±0.05 C-C 50:1 3.94 9. 5° B 20:1 8° C ±2° 5° 8° 0.20 Sφ1.00×0.20 1.00 0.203 6.04 8° 0.40×45° A C BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 11 Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500B/C Mechanical Dimensions (Continued) DIP-16 Unit: mm 6° 1.524 4° 0.7 6° 4° 3.4±0.15 7.62±0.25 5° 19.0±0.10 3.3 φ3×0.10±0.05 0.254 8.7±0.30 2.54 6.3±0.10 0.254 0.457 R0.75 BCD Semiconductor Manufacturing Limited Dec. 2004 Rev. 1. 0 12 http://www.bcdsemi.com BCD Semiconductor Corporation 3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A Tel : +1-408-988 6388, Fax : +1-408-988 6386 Shanghai SIM-BCD Semiconductor manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6485-1491, Fax: +86-21-5450-0008 Advanced Analog circuits (Shanghai) Corporation 8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor (Taiwan) company Limited Room 2210, 22nd Fl, 333, Keelung Road, Sec. 1, TaiPei (110), Taiwan Tel: +886-2-2758 6828, Fax: +886-2-2758 6892 IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.