ETC GE9435

GEMOS
MOS FIELD EFFECT TRANSISTOR
GE9435
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE9435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge. It has been optimized for
power management applications requiring a wide range of
gave drive voltage ratings (4.5V – 25V).
Schematic diagram
GENERAL FEATURES
● VDS = -30V,ID = -5.3A
RDS(ON) < 90mΩ @ VGS=-4.5V
RDS(ON) < 53mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
APPLICATIONS
● Battery protection
● Load switch
● Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape width
Quantity
9435
GE9435
SOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
Parameter
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
ID
-5.3
A
IDM
-20
A
Drain Current-Continuous @ Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PD
2.5
W
TJ,TSTG
-55 to 150
℃
RθJA
50
℃/W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
(Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
Condition
Min
VGS=0V,ID=-250µA
VDS=-24V,VGS=0V
VGS=±20V,VDS=0V
-30
VDS=VGS,,ID=-250µA
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
-1
VDS=-15V, ID=-5.3A
4
Typ
46
74
7
Max
Unit
-1
±100
V
µA
nA
-3
53
V
mΩ
90
mΩ
S
捷拓科技有限公司
GEMOS(SHEN ZHEN) TECHNOLOGY LIMITED COMPANY
地
址:廣東省深圳市福田區南園路 68 号上步大廈 18 樓 I-L 室
電
話:0755-83661391
傳
真:0755-83661909
郵政編碼:518031
公司網站:www.gemostech.com
ADD:Room I-L,18F,Shangbu Bldg.,NO.68 Nanyuan Road, Futian District,Shenzhen China.
Tel:0755-83661391
Fax:0755-83661909
Postcode:518031
Website:www.gemostech.com
© GEMOS TECH CO., LTD. 2007
GEMOS
GE9435
DYNAMIC CHARACTERISTICS
(Note 4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDS=-15V,VGS=0V,
F=1.0MHz
1040
420
PF
PF
150
PF
td(on)
19
VDD=-15V,ID=-1A
VGS=-10V,RGEN=6Ω
tr
td(off)
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VDS=-15V,ID=-5.3A,
VGS=-10V
26
nS
9
13
nS
74
105
nS
36
50
nS
22.5
2
29
nC
nC
6
VGS=0V,IS=-5.3A
nC
-1.3
-1.9
V
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Figure 1: Switching Test Circuit
Figure 2: Switching Waveforms
Figure 3: Normalized Maximum Transient Thermal Impedance
©GEMOS TECH CO.,LTD.
2006.9.6
Version:1.1
Page 2 of 4
GEMOS
GE9435
SOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©GEMOS TECH CO.,LTD.
2006.9.6
Version:1.1
Page 3 of 4
GEMOS
GE9435
ATTENTION:
■ Any and all GEMOS products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose
failure can be reasonably expected to result in serious physical and/or material damage. Consult with your GEMOS
representative nearest you before using any GEMOS products described or contained herein in such applications.
■ GEMOS assumes no responsibility for equipment failures that result from using products at values that exceed, even
momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all GEMOS products described or contained herein.
■ Specifications of any and all GEMOS products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ GEMOS THCH. Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products
fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are
not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
■ In the event that any or all GEMOS products(including technical data, services) described or contained herein are controlled
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use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to product/technology
improvement, etc. When designing equipment, refer to the "Delivery Specification" for the GEMOS product that you intend to
use.
■ This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice.
■ The translation makes effort to be accurate and simply, if Chinese-translation has Difference, Take English explanation as the
standard.
注意:
■ GEMOS产品说明书中所描述的信息,在没有特殊声明的条件下,不可使用在要求高可靠性的电路中。例如人体供能系统,航天控制系统或其
他应用中。在这种高可靠性应用下,可能会导致严重的物理或者材料的损坏。当设计电路中用到GEMOS的产品时,请就近咨询代理商。
■ GEMOS对客户在超出说明书中提到的额定值使用产品所造成的损失不承担任何责任,即使是瞬间的使用(例如最大额定值,工作环境范围或
其他参数)
。
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不做保证。为了了解产品在单独使用下无法估测的情况,GEMOS建议客户在使用过程中,必须不断的评估和反复的测试实际应用在产品和设
备中的问题。
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的发生,危及人的生命,也可能导致产生浓烟或者大火,招致财产受到损失。当你在设计产品时,必须采用安全指标,这样可以避免事故的发
生。这些措施不仅仅是为了保护电路,电路错误预防所做的安全的设计,多余的设计和结构的设计。
■ GEMOS的所有产品(包括技术参数和服务)受到当地出口法规的控制,这种产品在没有得到有关部门的同意是不允许出口。
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■ 在文中所列的信息(包括电路图和电路参数)仅做泛例参考;这并不是批量生产的保证。GEMOS保证说明书中所提到的任何信息都是准确、
可靠的,但是不对其使用在任何违反知识产权或者第三方其他产权的情况作保证。
■ 所有产品由于工艺/技术的提高等所做的信息变动,GEMOS不做通知。当在设计电路时,请参照将要使用的产品的交付说明书。
■ 这份说明书所提供的信息时间是在2007年5月。对规格书中信息的更改我们不做通知。
■ 翻译力求简单准确,如中文翻译有歧义,概以英文说明为准。
©GEMOS TECH CO.,LTD.
2006.9.6
Version:1.1
Page 4 of 4