R F 1A~F 1M Surface Mount FAST RECOVERY RECTIFIER S E M I C O N D U C T O R Reverse Voltage - 50 to 1000 Volts Forward Current -1.0Ampere FEATURES ● ● ● ● ● ● ● ● Low profile space Ideal for automated placement Glass passivated chip junctions Low forward voltage drop Low leakage current High forward surge capability High temperature soldering： 260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC MECHANICAL DATA ● ● ● Case: JEDEC SOD-123FL molded plastic body over glass passivated chip Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D Polarity: Laser band denotes cathode end MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Symbol F1A F1B F1D F1G F1J F1K F1M UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 1 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 25 A Maximum instantaneous forwad voltage at 1.0A Maximum DC reverse current TA = 25 ℃ at Rated DC blocking voltage TA = 100℃ Maximum reverse recovery time at IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A VF 1.3 V IR 5.0 50 μA Typical junction capacitance at 4.0 V ,1MHz CJ 15 pF TJ, TSTG –55 to +150 ℃ Operating junction and storage temperature range JINAN JINGHENG ELECTRONICS CO., LTD. trr 150 250 500 nS R S E M I C O N D U C T O R RATINGS AND CHARACTERISTIC CURVES F 1A~F 1M FIG.2-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 1.0 50 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0.8 PEAK FORWARD SURGE CURRENT(AMPERES) AVERAGE FORWARD CURRENT (A) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE 0.6 0.4 SINGIE PHASE HAIF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD 0.2 0 0 25 50 75 100 125 150 175 40 30 20 10 0 AMBIENT TEMPERATURE (°C) 1 2 4 6 8 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT (µA) INSTANTANEOUS FORWARD CURRENT( AMPERES) FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 3 1 0.3 0.1 TJ=25°C Pulse Width=300µs 1% Duty Cycle 0.03 10 6.0 4.0 2.0 1.0 0.6 0.4 0.2 TJ=25 C 0.1 0.06 0.04 0.02 0.01 0 20 40 60 80 100 120 140 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 PERCENT OF RATED PEAK REVERSE VOLTAGE(%) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIG.6-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC JUNCTION CAPACITANCE(pF) FIG.5-TYPICAL JUNCTION CAPACITANCE 200 100 50W 10W NONINDUCTIVE NONINDUCTIVE trr +0.5A 60 40 (＋) D.U.T. PULSE GENERATOR (NOTE2) 50Vdc 20 (ADJUSTABLE) (－) 10 0 0.1 0.2 0.4 1 2 1 NONINDUCTIVE TJ=25°C 4 10 20 40 100 0 -0.25A OSCILLOSCOPE (NOTE1) NOTES:1.Rise Time=7ns max. input lmpedance=1 megohm 22pF 2.Rise Time=10ns max. source lmpedance =50 ohms -1.0A 1cm SET TIME BASE FOR 50/100 ns/cm REVERSE VOLTAGE. (V) JINAN JINGHENG ELECTRONICS CO., LTD. E-mail:[email protected]