S50RIA Medium Power Thyristors STUD VERSION L iu j in g re ct i f ie r c o . , L t d . FEATURES TYPICAL APPLICATIONS 1). High current rating 2). Excellent dynamic characteristics 3). dv/dt = 1000V/μs option 4). Superior surge capabilities 5). Standard package 6). Metric threads version available 7). Types up to 1600V VDRM/ VRRM 1). Phase control applications in converters 2). Lighting circuits 3). Battery charges 4). Regulated power supplies and temperature and speed control circuit 5). Can be supplied to meet stringent military, aerospace and other high-reliability requirements MAJOR RATINGS AND CHARACTERISTICS Parameters IF(AV) @ TC IF(RMS) IFSM I2t @ 50Hz @ 60Hz @ 50Hz @ 60Hz VDRM/VRRM Tq TJ S50RIA 10 to 120 140 to 160 50 94 80 1430 1490 10.18 9.30 100 to 1200 50 90 80 1200 1257 7.21 6.58 1400 to 1600 typical 110 - 40 to 125 Unit A ℃ A A A KA2s A 2s V μs ℃ ELECTRICAL SPECIFICATIONS 1). Voltage Ratings Type number S50RIA Voltage Code VDRM/VRRM, maximum repetitive peak reverse voltage *(1) V VRSM, maximum nonrepetitive peak reverse voltage *(2) V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 IDRM/IRRM max. @ TJ = TJ max mA 15 *(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs *(2) For voltage pulses with tp ≤ 5ms www.china-liujing.com 1/6 S50RIA 2). Forward Conduction Parameters IT(AV) 2 It 2 I √t Unit 10 to 120 140 to 160 Max. average forward current 50 50 A @ Case temperature 94 90 ℃ 80 80 A 1430 1200 Max. peak, one-cycle forward, 1490 1257 non-repetitive surge current 1200 1010 1255 IT(RMS) Max. RMS forward current ITSM S50RIA 2 Maximum I t for fusing 2 Maximum I √t for fusing 180° conduction, half sine wave t = 10ms No voltage t = 8.3ms reapplied t = 10ms 100% VRRM 1057 t = 8.3ms reapplied 10.18 7.21 t = 10ms No voltage 9.30 6.58 t = 8.3ms reapplied 7.20 5.10 t = 10ms 100% VRRM 6.56 4.65 t = 8.3ms reapplied 101.8 72.1 VT(TO)1 Low level value of threshold voltage 0.94 1.02 VT(TO)2 High level value of threshold voltage 1.08 1.17 rt1 Low level value of forward slope resistance 4.08 4.78 rt2 High level value of forward slope resistance 3.34 3.97 VTM Max. forward voltage drop 1.60 1.78 IH Maximum holding current 200 IL Typical latching current 400 A 2 KA s 2 KA √s V mΩ V mA Sinusoidal half wave, Initial TJ = TJ max. t = 0.1 to 10ms, no voltage reapplied (16.7%xπx IF(AV)<I<πx IF(AV)), TJ=TJ max. (I >π x IF(AV)), TJ = TJ max. (16.7% xπx IF(AV)<I<πxIF(AV)), TJ=TJ max. (I > π x IF(AV)), TJ = TJ max. Ipk= 50A, TJ = 25℃ tp = 10ms sine pulse TJ = 25°C, anode supply 12V resistive load TC = 125℃, VDM = rated VDRM Max. rate of rise of turned-on current di/dt Conditions VDRM ≤ 600V 200 VDRM ≤ 1600V 100 A/μs Gate pulse = 20V, 15Ω, tp = 6μs, tr = 0.1μs max. ITM = (2x rated di/dt) A TC = 25℃ VDM = rated VDRM ITM = 10A dc td Typical delay time resistive circuit Gate pulse = 10V, 15Ω 0.9 μs tq Typical turn-off time source, tp = 20μs TC = 125℃, ITM = 50A, reapplied dv/dt 110 = 20V/μs dir/dt = -10A/μs, VR=50V dv/dt Max. critical rate of rise of off-state voltage 200 500(*) V/μs TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (*) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. S50RIA120S90. www.china-liujing.com 2/6 S50RIA 3). Triggering Parameters PGM S50RIA Maximum peak gate power Unit 10 PG(AV) Maximum average gate power 2.5 Conditions W TJ = TJ max. IGM Max. peak positive gate current 2.5 A TJ = TJ max. +VGM Max. peak positive gate current 20 V TJ = TJ max. -VGM Maximum peak positive gate voltage 10 250 IGT VGT IGD DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger mA TJ = - 40℃ 100 TJ = 25℃ Max. required gate trigger 50 TJ = 125℃ lowest value which 3.5 TJ = - 40℃ anode-to-cathode applied 2.5 V 5.0 mA current/voltage are the TJ = 25℃ TJ = TJ max. VDRM = rated value VGD DC gate voltage not to trigger 0.2 V TJ Max. operating temperature range - 40 to 125 ℃ Tstg Max. storage temperature range - 40 to 125 ℃ will trigger all units 6V TJ = TJ max. Max. gate current/ voltage not to trigger is the max. value which. will not trigger any unit with rated V DRM anode-to-cathode applied RthJC Max. thermal resistance, junction to case 0.35 K/W DC operation RthCS Max. thermal resistance, case to heatsink 0.25 K/W Mounting surface, smooth, flat and greased Min. 2.8 (25) Nm Max. 3.4 (30) lbf-in 28 (1.0) g (oz) T Mounting torque wt Approximate weight Case style Non-lubricated threads See Outline Table TO-65 ΔRthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.078 0.057 120° 0.094 0.098 90° 0.120 0.130 60° 0.176 0.183 30° 0.294 0.296 www.china-liujing.com Units Conditions K/W TJ = TJ max. 3/6 S50RIA 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& PERFORMANCE CURVES FIGURE 9WR9 5'& .: WK-& &RQGXFWLRQ$QJOH e e e e e 9WR9 5'& .: WK-& &RQGXFWLRQ3HULRG e e e e e e 506/LPLW &RQGXFWLRQ$QJOH 9WR9 7 - e& &RQGXFWLRQ3HULRG 9WR9 7 e& - 9WR9 &RQGXFWLRQ$QJOH e e e e $YHUDJH2QVWDWH&XUUHQW$ )LJ&XUUHQW5DWLQJV&KDUDFWHULVWLFV www.china-liujing.com 9WR9 ) LJ 0 D [LP X P 1 R Q 5 H S H WLWLYH 6 X UJ H & X UUH Q W 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& 9WR9 5'& .: WK-& e 3XOVH7UDLQ'XUDWLRQV ) LJ 0 D [LP X P 1 R Q 5 H S H WLWLYH 6 X UJ H & X UUH Q W 0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW 9HUVXV3XOVH7UDLQ'XUDWLRQ&RQWURO 2I&RQGXFWLRQ0D\1RW%H0DLQWDLQHG ,QLWLDO7 e& 1R9ROWDJH5HDSSOLHG 5DWHG95HDSSOLHG 550 1XPEHU2I(TXDO$PSOLWXGH+DOI&\FOH&XUUHQW3XOVHV1 )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ $YHUDJH2QVWDWH&XUUHQW$ 506/LPLW #+]V #+]V $W$Q\5DWHG/RDG&RQGLWLRQ$QG:LWK 5DWHG9$SSOLHG)ROORZLQJ6XUJH 550 ,QLWLDO7 e& - '& e e e e e )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV $YHUDJH2QVWDWH&XUUHQW$ )LJ&XUUHQW5DWLQJV&KDUDFWHULVWLF 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: $YHUDJH2QVWDWH&XUUHQW$ )LJ&XUUHQW5DWLQJV&KDUDFWHULVWLF '& $YHUDJH2QVWDWH&XUUHQW$ e e e e 9WR9 5'& .: WK-& &RQGXFWLRQ3HULRG e e e e e '& $YHUDJH2QVWDWH&XUUHQW$ )LJ&XUUHQW5DWLQJV&KDUDFWHULVWLFV 4/6 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: S50RIA e e e e e 506/LPLW &RQGXFWLRQ$QJOH 9WR9 7 - e& '& e e e e e 506/LPLW &RQGXFWLRQ3HULRG 9WR9 7 e& - $YHUDJH2QVWDWH&XUUHQW$ $W$Q\5DWHG/RDG&RQGLWLRQ$QG:LWK 5DWHG9$SSOLHG)ROORZLQJ6XUJH 550 ,QLWLDO7 e& #+]V #+]V 9WR9 0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW 9HUVXV3XOVH7UDLQ'XUDWLRQ&RQWURO 2I&RQGXFWLRQ0D\1RW%H0DLQWDLQHG ,QLWLDO7 e& 1R9ROWDJH5HDSSOLHG 5DWHG95HDSSOLHG 550 9WR9 1XPEHU2I(TXDO$PSOLWXGH+DOI&\FOH&XUUHQW3XOVHV1 3XOVH7UDLQ'XUDWLRQV )LJ0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW )LJ0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW ,QVWDQWDQHRXV2QVWDWH&XUUHQW$ ,QVWDQWDQHRXV2QVWDWH&XUUHQW$ )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV $YHUDJH2QVWDWH&XUUHQW$ 7 - e& 7 - e& 9WR9 7 - e& 7 - e& 9WR9 ,QVWDQWDQHRXV2QVWDWH9ROWDJH9 )LJ)RUZDUG9ROWDJH'URS&KDUDFWHULVWLFV )LJ)RUZDUG9ROWDJH'URS&KDUDFWHULVWLFV 7UDQVLHQW7KHUPDO,PSHGDQFH=.: WK-KV ,QVWDQWDQHRXV2QVWDWH9ROWDJH9 6WHDG\6WDWH9DOXH 5 .: WK-KV 6TXDUH:DYH3XOVH'XUDWLRQV )LJ7KHUPDO,PSHGDQFH= &KDUDFWHULVWLFV WK-& www.china-liujing.com 5/6 S50RIA 5HFWDQJXODUJDWHSXOVH D5HFRPPHQGHGORDGOLQHIRU UDWHGGLGW9RKPVWU 嘕V E5HFRPPHQGHGORDGOLQHIRU UDWHGGLGW9RKPV WU 嘕V E D 7M e& 9*' 7M e& 7M e& ,QVWDQWDQHRXV*DWH9ROWDJH9 ,*' 3*0 3*0 3*0 3*0 :WS PV :WS PV :WS PV :WS 嘕V )UHTXHQF\/LPLWHGE\3*$9 ,QVWDQWDQHRXV*DWH&XUUHQW$ )LJ*DWH&KDUDFWHULVWLFV OUTLINE Case Style TO-65 E-mail: [email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. 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