S10RIA Medium Power Thyristors STUD VERSION L iu j in g re ct i f ie r c o . , L t d . FEATURES TYPICAL APPLICATIONS 1). Improved glass passivation for high reliability and exceptional stability at high temperature 2). High di/dt and dv/dt capabilities 3). Standard package 4). Low thermal resistance 5). Metric threads version available 6). Types up to 1200V VDRM/ VRRM 1). Medium power switching 2). Phase control applications 3). Can be supplied to meet stringent military, aerospace and other high-reliability requirements MAJOR RATINGS AND CHARACTERISTICS Parameters IF(AV) 10 A 85 ℃ 25 A @ 50Hz 225 A @ 60Hz 240 A @ 50Hz 255 A 2s @ 60Hz 233 A2s @ TC IF(RMS) IFSM I2t VDRM/VRRM Tq Unit S10RIA 100 to 1200 V 110 μs - 65 to 125 ℃ typical TJ ELECTRICAL SPECIFICATIONS 1). Voltage Ratings Type number S10RIA Voltage Code VDRM/VRRM, maximum repetitive peak reverse voltage *(1) VRSM, maximum nonrepetitive peak reverse voltage *(2) IDRM/IRRM max. @ TJ = TJ max V V mA 10 100 150 20 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 10 *(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs *(2) For voltage pulses with tp ≤ 5ms www.china-liujing.com 1/6 S10RIA 2). Forward Conduction Parameters IT(AV) S10RIA Unit Max. average forward current 10 A @ Case temperature 85 ℃ 25 A IT(RMS) Max. RMS forward current I2t No voltage t = 8.3ms reapplied t = 10ms 100% VRRM 200 t = 8.3ms reapplied Sinusoidal half wave, 255 t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Max. peak, one-cycle forward, 240 non-repetitive surge current 190 Maximum I2t for fusing 233 180 A A 2s 165 I2√t Maximum I2√t for fusing 180° conduction, half sine wave t = 10ms 225 ITSM Conditions 2550 VT(TO)1 Low level value of threshold voltage 1.10 VT(TO)2 High level value of threshold voltage 1.39 rt1 Low level value of forward slope resistance 24.3 rt2 High level value of forward slope resistance 16.7 VTM Max. forward voltage drop 1.75 IH Maximum holding current 130 IL Typical latching current 200 A2√s V mΩ V mA t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. Ipk= 32A, TJ = 25℃ tp = 10ms sine pulse TJ = 25°C, anode supply 12V resistive load Max. rate of rise of turned-on current VDRM ≤ 600V 200 VDRM ≤ 800V 180 VDRM ≤ 1000V 160 VDRM ≤ 1600V 150 tgt Typical turn-on time 0.9 trr Typical reverse recovery time di/dt TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, A/μs ITM = (2x rated di/dt) A TJ = 25℃, at = rated VDRM/VRRM, TJ = 125℃ 4 TJ = TJ max., ITM = IT(AV), tp > 200μs, di/dt = -10A/μs μs tq Typical turn-off time 110 15Ω, tp = 6μs, tr = 0.1μs max. TJ = TJ max., ITM = IT(AV), tp > 200μs, VR = 100V, di/dt = -10A/μs, dv/dt = 20V/μs linear to 67% VDRM, gate bias 0V-100W dv/dt Max. critical rate of rise of off-state voltage 100 TJ = TJ max. linear to 100% rated VDRM 300 (*) TJ = TJ max. linear to 67% rated VDRM (*) tq = 10μsup to 600V, tq = 30μs up to 1600V available on special request. (**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. 16RIA120S90. www.china-liujing.com 2/6 S10RIA 3). Triggering Parameters PGM S10RIA Maximum peak gate power 8.0 PG(AV) Maximum average gate power IGM -VGM Unit 2.0 W TJ = TJ max. Max. peak positive gate current 1.5 A TJ = TJ max. Maximum peak negative gate voltage 10 V TJ = TJ max. TJ = - 65℃ 90 IGT VGT IGD VGD Conditions DC gate current required to trigger 60 DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger mA voltage are the lowest value which TJ = 25℃ will trigger all units 6V anode-to- 35 TJ = 125℃ 3.0 TJ = - 65℃ 2.0 V TJ = 25℃ 1.0 V TJ = 125℃ 2.0 mA 0.2 V TJ Max. operating temperature range - 65 to 125 ℃ Tstg Max. storage temperature range - 65 to 125 ℃ Max. required gate trigger current/ cathode applied TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value Max. gate current/ voltage not to trigger is the max. value which. will not trigger any unit with rated V DRM anode-to-cathode applied RthJC Max. thermal resistance, junction to case 1.85 K/W DC operation RthCS Max. thermal resistance, case to heatsink 0.35 K/W Mounting surface, smooth, flat and greased T Mounting torque wt Approximate weight to nut to device 20(27.5) 25 lbf-in Lubricated threads 0.23(0.32) 0.29 kgf.m (Non-lubricated threads) 2.3(3.1) 2.8 Nm 14 (0.49) g (oz) See Outline Table TO-48 Case style ΔRthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.44 0.32 120° 0.53 0.56 90° 0.68 0.75 60° 1.01 1.05 30° 1.71 1.73 www.china-liujing.com Units Conditions K/W TJ = TJ max. 3/6 S10RIA 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& 0D[LPXP$OORZDEOH&DVH7HPSHUDWXUHe& PERFORMANCE CURVES FIGURE 5'& .: WK-& &RQGXFWLRQ$QJOH e e e e e 5'& .: WK-& &RQGXFWLRQ3HULRG e e e e e '& $YHUDJH2QVWDWH&XUUHQW$ $YHUDJH2QVWDWH&XUUHQW$ ) LJ & X UUH Q W5 D WLQ J V& K D UD FWH ULVWLF ) LJ & X UUH Q W5 D WLQ J V& K D UD FWH ULVWLF . : 506/LPLW . : . : . : &RQGXFWLRQ$QJOH 5 D HOW . : ' : . e e e e e $ 6 5 WK 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: . : 7 e& - $YHUDJH2QVWDWH&XUUHQW$ 0D[LPXP$OORZDEOH$PELHQW7HPSHUDWXUHe& '& e e e e e 5 6$ WK 0D[LPXP$YHUDJH2QVWDWH3RZHU/RVV: )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV . : . : . : 506/LPLW &RQGXFWLRQ3HULRG . : 7 e& - . : 'H OWD 5 . : . : $YHUDJH2QVWDWH&XUUHQW$ 0D[LPXP$OORZDEOH$PELHQW7HPSHUDWXUHe& $W$Q\5DWHG/RDG&RQGLWLRQ$QG:LWK 5DWHG9$SSOLHG)ROORZLQJ6XUJH 550 ,QLWLDO7 e& #+]V #+]V 1XPEHU2I(TXDO$PSOLWXGH+DOI&\FOH&XUUHQW3XOVHV1 )LJ0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW www.china-liujing.com 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ 3HDN+DOI6LQH:DYH2QVWDWH&XUUHQW$ )LJ2QVWDWH3RZHU/RVV&KDUDFWHULVWLFV 0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW 9HUVXV3XOVH7UDLQ'XUDWLRQ&RQWURO 2I&RQGXFWLRQ0D\1RW%H0DLQWDLQHG ,QLWLDO7 e& 1R9ROWDJH5HDSSOLHG 5DWHG95HDSSOLHG 550 3XOVH7UDLQ'XUDWLRQV )LJ0D[LPXP1RQ5HSHWLWLYH6XUJH&XUUHQW 4/6 ,QVWD QWDQHR XV2 QVWDWH& XUUHQW$ S10RIA 7 & 7 & - 7UDQVLHQW7KHUPDO,PSHGDQFH=.: WK-& ,QVWDQWD Q HRXV2 QVWD WH9R OWD JH9 )LJ)RUZDUG9ROWDJH'URS&KDUDFWHULVWLFV 6WHDG\6WDWH9DOXH 5 .: WK-& '&2SHUDWLRQ 6TXDUH:DYH3XOVH'XUDWLRQV )LJ7KHUPDO,PSHGDQFH= &KDUDFWHULVWLFV WK-& 5HFWDQJXODUJDWHSXOVH D5HFRPPHQGHGORDGOLQHIRU UDWHGGLGW9RKPV WU 嘕VWS! 嘕V E5HFRPPHQGHGORDGOLQHIRU UDWHGGLGW9RKPV WU 嘕VWS! 嘕V 3*0 3*0 3*0 3*0 :WS :WS :WS :WS PV PV PV PV D E 9*' 7M e& 7M e& 7M e& ,QVWDQWDQHRXV*DWH9ROWDJH9 ,*' )UHTXHQF\/LPLWHGE\3*$9 ,QVWDQWDQHRXV*DWH&XUUHQW$ )LJ*DWH&KDUDFWHULVWLFV www.china-liujing.com 5/6 S10RIA OUTLINE Case Style TO-48 E-mail: [email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 6/6