LIUJING S10RIA

S10RIA
Medium Power Thyristors
STUD VERSION
L iu j in g re ct i f ie r c o . , L t d .
FEATURES
TYPICAL APPLICATIONS
1). Improved glass passivation for high reliability
and exceptional stability at high temperature
2). High di/dt and dv/dt capabilities
3). Standard package
4). Low thermal resistance
5). Metric threads version available
6). Types up to 1200V VDRM/ VRRM
1). Medium power switching
2). Phase control applications
3). Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
Parameters
IF(AV)
10
A
85
℃
25
A
@ 50Hz
225
A
@ 60Hz
240
A
@ 50Hz
255
A 2s
@ 60Hz
233
A2s
@ TC
IF(RMS)
IFSM
I2t
VDRM/VRRM
Tq
Unit
S10RIA
100 to 1200
V
110
μs
- 65 to 125
℃
typical
TJ
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
Type number
S10RIA
Voltage Code
VDRM/VRRM, maximum
repetitive peak
reverse voltage *(1)
VRSM, maximum nonrepetitive peak
reverse voltage *(2)
IDRM/IRRM max.
@ TJ = TJ max
V
V
mA
10
100
150
20
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
10
*(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
*(2) For voltage pulses with tp ≤ 5ms
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S10RIA
2). Forward Conduction
Parameters
IT(AV)
S10RIA
Unit
Max. average forward current
10
A
@ Case temperature
85
℃
25
A
IT(RMS) Max. RMS forward current
I2t
No voltage
t = 8.3ms
reapplied
t = 10ms
100% VRRM
200
t = 8.3ms
reapplied
Sinusoidal half wave,
255
t = 10ms
No voltage
Initial TJ = TJ max.
t = 8.3ms
reapplied
t = 10ms
100% VRRM
t = 8.3ms
reapplied
Max. peak, one-cycle forward,
240
non-repetitive surge current
190
Maximum I2t for fusing
233
180
A
A 2s
165
I2√t
Maximum I2√t for fusing
180° conduction, half sine wave
t = 10ms
225
ITSM
Conditions
2550
VT(TO)1 Low level value of threshold voltage
1.10
VT(TO)2 High level value of threshold voltage
1.39
rt1
Low level value of forward slope resistance
24.3
rt2
High level value of forward slope resistance
16.7
VTM
Max. forward voltage drop
1.75
IH
Maximum holding current
130
IL
Typical latching current
200
A2√s
V
mΩ
V
mA
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)), TJ = TJ max.
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
(I > π x IF(AV)), TJ = TJ max.
Ipk= 32A, TJ = 25℃ tp = 10ms sine pulse
TJ = 25°C, anode supply 12V resistive load
Max. rate of rise of turned-on current
VDRM ≤ 600V
200
VDRM ≤ 800V
180
VDRM ≤ 1000V
160
VDRM ≤ 1600V
150
tgt
Typical turn-on time
0.9
trr
Typical reverse recovery time
di/dt
TJ = TJ max., VDM = rated VDRM Gate pulse = 20V,
A/μs
ITM = (2x rated di/dt) A
TJ = 25℃, at = rated VDRM/VRRM, TJ = 125℃
4
TJ = TJ max., ITM = IT(AV), tp > 200μs, di/dt = -10A/μs
μs
tq
Typical turn-off time
110
15Ω, tp = 6μs, tr = 0.1μs max.
TJ = TJ max., ITM = IT(AV), tp > 200μs, VR = 100V,
di/dt = -10A/μs, dv/dt = 20V/μs linear to 67% VDRM,
gate bias 0V-100W
dv/dt
Max. critical rate of rise of
off-state voltage
100
TJ = TJ max. linear to 100% rated VDRM
300 (*)
TJ = TJ max. linear to 67% rated VDRM
(*) tq = 10μsup to 600V, tq = 30μs up to 1600V available on special request.
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. 16RIA120S90.
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S10RIA
3). Triggering
Parameters
PGM
S10RIA
Maximum peak gate power
8.0
PG(AV) Maximum average gate power
IGM
-VGM
Unit
2.0
W
TJ = TJ max.
Max. peak positive gate current
1.5
A
TJ = TJ max.
Maximum peak negative gate voltage
10
V
TJ = TJ max.
TJ = - 65℃
90
IGT
VGT
IGD
VGD
Conditions
DC gate current required to trigger
60
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
mA
voltage are the lowest value which
TJ = 25℃
will trigger all units 6V anode-to-
35
TJ = 125℃
3.0
TJ = - 65℃
2.0
V
TJ = 25℃
1.0
V
TJ = 125℃
2.0
mA
0.2
V
TJ
Max. operating temperature range
- 65 to 125
℃
Tstg
Max. storage temperature range
- 65 to 125
℃
Max. required gate trigger current/
cathode applied
TJ = TJ max., VDRM = rated value
TJ = TJ max.
VDRM = rated value
Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated V DRM
anode-to-cathode applied
RthJC
Max. thermal resistance, junction to case
1.85
K/W
DC operation
RthCS
Max. thermal resistance, case to heatsink
0.35
K/W
Mounting surface, smooth, flat and greased
T
Mounting torque
wt
Approximate weight
to nut
to device
20(27.5)
25
lbf-in
Lubricated threads
0.23(0.32)
0.29
kgf.m
(Non-lubricated threads)
2.3(3.1)
2.8
Nm
14 (0.49)
g (oz)
See Outline Table
TO-48
Case style
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction
Rectangular conduction
180°
0.44
0.32
120°
0.53
0.56
90°
0.68
0.75
60°
1.01
1.05
30°
1.71
1.73
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Units
Conditions
K/W
TJ = TJ max.
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S10RIA
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OUTLINE
Case Style TO-48
E-mail: [email protected]
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: [email protected]
[email protected]
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Devices manufactory.
LIUJING reserves the right to change limits, test conditions and dimensions.
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