2SD313 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! Complement to 2SB507 TO-220 ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 60 60 7 3 30 150 -50~150 V V V A W C o o C ELECTRICAL CHARACTERISTICS (TA=25oC) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 2V , IC=1A IC=2A , IB=0.2A VCE= 5V , IC=0.5A : TEL:+86-13537087568 FAX:+86-769-83220817 lizhenhui E-mail:[email protected] Min Typ 100 100 320 1.0 40 8 . Max Unit µA µA V MHZ