ISC 2SB507

Inchange Semiconductor
Product Specification
2SB507
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD313
・Low collector saturation voltage
APPLICATIONS
・Designed for the output stage of 15W
to 25W AF power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-3
A
ICM
Collector current-Peak
-6
A
IB
Base current
-1
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
MAX
UNIT
4.16
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SB507
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
CONDITIONS
MIN
TYP.
MAX
Collector-emitter voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-0.1
mA
ICEO
Collector cut-off current
VCE=-60V; IB=0
-5.0
mA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
40
hFE-2
DC current gain
IC=-0.1A ; VCE=-2V
40
Transition frequency
IC=-0.5A ; VCE=-5V
5
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
-60
UNIT
VCEO
fT
‹
PARAMETER
V
320
MHz
Inchange Semiconductor
Product Specification
2SB507
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3