PJA733 PNP Epitaxial Silicon Transistor TO-92 AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OS C. • SOT-23 Complement to PJC945 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -50 -45 V V Emitter-Base Voltage VEBO -5 V Collector Current Ic -100 mA Collector Dissipation PC 450 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 ~150 °C P in : 1. Base 2. Emitter 3.Collector P in : 1. Emitter 2. Colletor 3. Base ORDERING INFORMATION Device Operating Temperature PJA733CT PJA733CX Package -20℃～+85℃ TO-92 SOT-23 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current-Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO ICEO hFE VCE (SAT) VBE (SAT) VBE (on) fT C Ob Noise Figure NF h FE (2) Test Condition Ic = -100µA, IE = 0 Ic =-1.0mA, IB =0 IE = _100µA, IC = 0 VCB= 45V,IE =0 VEB=3V,IC=0 VCE =40V,IB=0 VCE =6V,Ic =1.0 mA IC=-100mA,IB=-5mA IC=-100mA,IB=-5mA IC=-2mA,VCE =-5V VCE =-5V,IC=-10mA f=1MHZ VCB=-10V,IE =0 VCE =-5V,IC= _0.2mA f=1KHZ ,Rs=1KΩ Min -50 -40 -5 Typ Max -50 -50 70 -0.6 100 200 -0.2 -0.82 -0.65 190 4.5 700 -0.7 -1.0 -0.75 7.0 V V V MHz pF 0.7 10 dB CLASSIFICATION Classification R Q P K hFE 70-140 120-240 200-400 350-700 1-3 Unit V V V nA nA 2002/01.rev.A PJA733 PNP Epitaxial Silicon Transistor STATIC CHARACTERISTIC BASE-EMITTER VOLTAGE DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJA733 PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A