MBR40100PT High Tjm (+175oC) Schottky Barrier Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR40100PT VRRM V 100 Symbol VDC V 100 Characteristics Maximum DC Reverse Current At Rated DC Blocking Voltage 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 300 A 10000 V/us @TJ=25 oC @TJ=125 oC @TJ=25 oC @TJ=125 oC 0.77 0.61 0.91 0.75 V @TJ=25oC @TJ=125oC 1.25 15 mA Voltage Rate Of Change (Rated VR) IRM 19.81 20.32 20.80 21.46 A Peak Forward Surge Current 10ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) VFM A B 40 @TC=145oC IFSM Maximum Forward Voltage (Note 1) Typical Thermal Resistance (Note 2) 1.25 CT Typical Junction Capacitance Per Element (Note 3) 600 TJ Operating Temperature Range RthJC TSTG Inches Min. Max. Unit Maximum Average Forward Rectified Current IF=20A IF=20A IF=40A IF=40A Millimeter Min. Max. Maximum Ratings IF(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +175 o -55 to +175 o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES MECHANICAL DATA * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * Case: TO-247AD molded plastic * Polarity: As marked on the body * Weight: 0.2 ounces, 5.6 grams * Mounting position: Any C C MBR40100PT High Tjm (+175oC) Schottky Barrier Diodes 1000 Rev e t r-n Ie rs um (eC 100 T =175°C J 100 150°C 10 125°C 1 100°C 75°C .1 50°C .01 10 25°C .001 0 T =175°C J 20 40 60 80 100 ReverseVoltage- VR (V) T =125°C J Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg) o na C paci t a nce- C ( pF ) T T = 25°C J 1000 T =25°C J Ju nct i 1 .1 0 .4 .8 1.2 1.6 100 0 2 20 40 60 ForwardVoltageDrop- V (V) FM /W ( ° )C .1 D=0.50 D=0.33 D=0.25 D=0.17 P DM t 1 t2 D=0.08 Notes: 1. Dutyfactor D= t / t 1 2 .01 SinglePulse (Thermal Resistance) .001 .00001 .0001 .001 100 Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage (Per Leg) 10 1 80 ReverseVoltage- VR(V) Fig. 1 - Max. Forward Voltage Drop Characteristics (Per Leg) Ther alm p I em d ance- Z C th J I n s t ant ane ous F or a w r du C r rF en t - I ( A ) R A) 1000 2. PeakT =P xZ +T J DM thJC C .01 .1 1 10 t , Rectangular PulseDuration(Seconds) 1 Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg) 100 MBR40100PT High Tjm (+175oC) Schottky Barrier Diodes 180 18 170 165 DC 160 155 150 0 D=0.08 16 D=0.17 D=0.25 14 D=0.33 12 D=0.50 10 8 RMSLimit DC 6 4 2 5 10 15 20 AverageForwardCurrent - I 25 F(AV) 0 0 30 5 10 15 20 25 30 AverageForwardCurrent - I (A) F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) 10000 (A) At Any Rated Load Condition And With Rated RRM V Applied Following Surge FSM Non-Repetitive Surge Current - I Al l ow ableCaseTemp e ra tu re-(° C ) Aver agePow er Loss - (W at ts) RthJC(DC) =1.25°C/W 175 1000 100 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg) L DUT IRFP460 Rg = 25 ohm CURRENT MONITOR HIGH-SPEED SWITCH FREE-WHEEL DIODE + Vd = 25 Volt 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Sirectifier R