WISDOM WFP7N70

WFP7N 70
Wisdom Semiconductor
N-Channel MOSFET
Features
RDS(on) (Max 0.9 Ω )@VGS=10V
■
Gate Charge (Typical 32nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
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■
■
2. Drain
{
Symbol
■
●
◀
1. Gate{
▲
●
●
{
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
3. Source
TO-220
1 2
3
Absolute Maximum Ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
700
V
Gate-source voltage
VGSS
30
V
TC=25C
8
A
TC=100C
4.8
A
IDM
32
A
PD
60
W
Drain current (DC)
*
Drain current (Pulsed)
ID
*
Power dissipation
Avalanche current (Single)
②
IAS
8
A
Single pulsed avalanche energy
②
EAS
266
mJ
Avalanche current (Repetitive)
①
IAR
8
A
Repetitive avalanche energy
①
EAR
11.6
mJ
TJ
150
Tstg
-55~150
Junction temperature
Storage temperature range
C
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Symbol
Typ.
Max.
Junction-case
Rth(J-C)
-
3.1
Junction-ambient
Rth(J-A)
-
62.5
Unit
C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ. Max. Unit
Drain-source breakdown voltage
BVDSS
ID=250uA, VGS=0V
700
-
-
V
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
2.0
-
4.0
V
Drain-source cut-off current
IDSS
VDS=700V, VGS=0V
-
-
1
uA
Gate leakage current
IGSS
VDS=0V, VGS=30V
-
-
100
nA
Drain-source on-resistance
④
RDS(on)
VGS=10V, ID=4.0A
-
0.77
0.90

Forward transfer conductance
④
gfs
VDS=10V, ID=4.0A
-
11
-
S
-
2006
2507
-
148
185
-
13.7
17.1
-
23
-
-
69
-
-
144
-
-
77
-
-
32
40
-
9
-
-
8
-
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
VGS=0V, VDS=25V
f=1 MHz
VDD=300V, ID=8A
RG=25Ω
③④
VDS=560V, VGS=10V
ID=8A
③④
Qgd
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Source current (DC)
IS
Test Condition
Min.
Typ. Max. Unit
-
-
8
-
-
32
Source current (Pulsed)
①
ISM
Integral reverse diode
in the MOSFET
Forward voltage
④
VSD
VGS=0V, IS=8A
-
-
1.4
V
Reverse recovery time
trr
-
420
-
ns
Reverse recovery charge
Qrr
IS=8A, VGS=0V
dIF/dt=100A/us
-
4.2
-
uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=7.74mH, IAS=8A, VDD=50V, RG=25Ω, Starting TJ=25C
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
A
Electrical Characteristic Curves
Fig. 2 ID - VGS
Fig. 1 ID - VDS
℃
-
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
℃
Fig. 5 Capacitance - VDS
Fig.6 VGS - QG
℃
Electrical Characteristic Curves
Fig. 7 VDSS - TJ
Fig.8 RDS(on) - TJ
C
Fig. 9 ID - TC
C
Fig. 10 Safe Operating Area
*
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
Package Dimension
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters